,
volume 47
,
issue 6
,
pages 4375-4384
Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
Publication type: Journal Article
Publication date: 2008-06-13
scimago Q3
wos Q3
SJR: 0.290
CiteScore: 2.9
Impact factor: 1.8
ISSN: 00214922, 13474065
General Physics and Astronomy
Physics and Astronomy (miscellaneous)
General Engineering
Abstract
Resonant tunneling diodes (RTDs) have the potential for use as compact and coherent terahertz (THz) sources operating at room temperature. In this paper, sub-THz and THz oscillators with RTDs integrated on planar circuits are described. Fundamental oscillation up to 0.65 THz and harmonic oscillation up to 1.02 THz were obtained at room temperature in our recent study. Limiting factors for oscillation frequency and output power are theoretically analyzed including tunneling and transit-time effects and parasitic elements. Oscillation frequency and its dependence on RTD size are in good agreement with the measured results. Based on this result, it is shown that fundamental oscillation up to 2.3 THz and an output power of 60 µW at 1 THz are theoretically expected by improving the structures of the RTD and the antenna. Voltage-controlled oscillation, which is useful for the precise control of frequency, is observed in the RTD oscillators. Coherent power combining in an array configuration to achieve high output power as well as mutual injection locking between the array elements are also described.
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Asada M., Suzuki S., Kishimoto N. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators // Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2008. Vol. 47. No. 6. pp. 4375-4384.
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Asada M., Suzuki S., Kishimoto N. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators // Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2008. Vol. 47. No. 6. pp. 4375-4384.
Cite this
RIS
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TY - JOUR
DO - 10.1143/JJAP.47.4375
UR - https://doi.org/10.1143/JJAP.47.4375
TI - Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
T2 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
AU - Asada, Masahiro
AU - Suzuki, Safumi
AU - Kishimoto, Naomichi
PY - 2008
DA - 2008/06/13
PB - Japan Society of Applied Physics
SP - 4375-4384
IS - 6
VL - 47
SN - 0021-4922
SN - 1347-4065
ER -
Cite this
BibTex (up to 50 authors)
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@article{2008_Asada,
author = {Masahiro Asada and Safumi Suzuki and Naomichi Kishimoto},
title = {Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators},
journal = {Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes},
year = {2008},
volume = {47},
publisher = {Japan Society of Applied Physics},
month = {jun},
url = {https://doi.org/10.1143/JJAP.47.4375},
number = {6},
pages = {4375--4384},
doi = {10.1143/JJAP.47.4375}
}
Cite this
MLA
Copy
Asada, Masahiro, et al. “Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators.” Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, vol. 47, no. 6, Jun. 2008, pp. 4375-4384. https://doi.org/10.1143/JJAP.47.4375.