Journal of the Electrochemical Society, volume 118, issue 1, pages 163
Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices
N. G. Anantha
1
,
V. Y. Doo
1
,
D. K. Seto
1
1
IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533
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Publication type: Journal Article
Publication date: 2007-02-22
scimago Q1
SJR: 0.868
CiteScore: 7.2
Impact factor: 3.1
ISSN: 00134651, 19457111
Materials Chemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrochemistry
Condensed Matter Physics
Renewable Energy, Sustainability and the Environment
Abstract
Thin chromium films were deposited on silicon openings of oxidized silicon wafers by thermal decomposition of dicumene chromium (DCC) in an argon atmosphere at temperatures between 350°–520°C. The metal‐silicon interface thus obtained was characterized by current‐voltage and capacitance‐voltage measurements. The interface exhibited a rectifying effect and functioned as a Schottky barrier junction. A barrier height of with respect to Fermi energy was obtained. The switching speed of the Schottky barrier diodes was found to be less than 0.1 nsec. The electrical properties of the chromium films obtained under various conditions are discussed. This chemical deposition technique, where chromium containing a small amount of carbon can be deposited, gives high quality Schottky barrier diodes.
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