Journal of the Electrochemical Society, volume 118, issue 1, pages 163
Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices
1
IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533
|
Publication type: Journal Article
Publication date: 2007-02-22
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor: 3.9
ISSN: 00134651, 19457111
Materials Chemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrochemistry
Condensed Matter Physics
Renewable Energy, Sustainability and the Environment
Abstract
Thin chromium films were deposited on silicon openings of oxidized silicon wafers by thermal decomposition of dicumene chromium (DCC) in an argon atmosphere at temperatures between 350°–520°C. The metal‐silicon interface thus obtained was characterized by current‐voltage and capacitance‐voltage measurements. The interface exhibited a rectifying effect and functioned as a Schottky barrier junction. A barrier height of with respect to Fermi energy was obtained. The switching speed of the Schottky barrier diodes was found to be less than 0.1 nsec. The electrical properties of the chromium films obtained under various conditions are discussed. This chemical deposition technique, where chromium containing a small amount of carbon can be deposited, gives high quality Schottky barrier diodes.
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Anantha N. G., Doo V. Y., Seto D. K. Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices // Journal of the Electrochemical Society. 2007. Vol. 118. No. 1. p. 163.
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Anantha N. G., Doo V. Y., Seto D. K. Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices // Journal of the Electrochemical Society. 2007. Vol. 118. No. 1. p. 163.
Cite this
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TY - JOUR
DO - 10.1149/1.2407936
UR - https://doi.org/10.1149/1.2407936
TI - Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices
T2 - Journal of the Electrochemical Society
AU - Anantha, N. G.
AU - Doo, V. Y.
AU - Seto, D. K.
PY - 2007
DA - 2007/02/22
PB - The Electrochemical Society
SP - 163
IS - 1
VL - 118
SN - 0013-4651
SN - 1945-7111
ER -
Cite this
BibTex
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@article{2007_Anantha,
author = {N. G. Anantha and V. Y. Doo and D. K. Seto},
title = {Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices},
journal = {Journal of the Electrochemical Society},
year = {2007},
volume = {118},
publisher = {The Electrochemical Society},
month = {feb},
url = {https://doi.org/10.1149/1.2407936},
number = {1},
pages = {163},
doi = {10.1149/1.2407936}
}
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MLA
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Anantha, N. G., et al. “Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices.” Journal of the Electrochemical Society, vol. 118, no. 1, Feb. 2007, p. 163. https://doi.org/10.1149/1.2407936.