ECS Journal of Solid State Science and Technology, volume 6, issue 9, pages P644-P652

Development of Process Recipes for Maximum Mask Etch Selectivity and Maximum Etch Rate Having Vertical Sidewalls for Deep, Highly-Anisotropic Inductively-Coupled Plasma (ICP) Etching of Fused Silica

Michael Pedersen
, 
Michael Huff
Publication type: Journal Article
Publication date: 2017-09-14
scimago Q3
SJR: 0.416
CiteScore: 4.5
Impact factor: 1.8
ISSN: 21628769, 21628777
Electronic, Optical and Magnetic Materials
Found 
Found 

Top-30

Journals

1
2
Micromachines
Micromachines, 2, 33.33%
Journal of Vacuum Science and Technology B
Journal of Vacuum Science and Technology B, 1, 16.67%
Plasma Chemistry and Plasma Processing
Plasma Chemistry and Plasma Processing, 1, 16.67%
Russian Journal of Applied Chemistry
Russian Journal of Applied Chemistry, 1, 16.67%
1
2

Publishers

1
2
MDPI
MDPI, 2, 33.33%
American Vacuum Society
American Vacuum Society, 1, 16.67%
Springer Nature
Springer Nature, 1, 16.67%
Pleiades Publishing
Pleiades Publishing, 1, 16.67%
Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers (IEEE), 1, 16.67%
1
2
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Share
Cite this
GOST | RIS | BibTex | MLA
Found error?