ECS Journal of Solid State Science and Technology, volume 12, issue 4, pages 44009
Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes
E. B. Yakimov
1
,
V.I. Nikolaev
2
,
A. I. Pechnikov
1
,
A. V. Polyakov
3
,
I. V. Shchemerov
1
,
A. Vasilev
4
,
Y. O. Kulanchikov
5
,
P. S. Vergeles
6
,
E. E. Yakimov
5
,
2
Publication type: Journal Article
Publication date: 2023-04-01
scimago Q3
SJR: 0.416
CiteScore: 4.5
Impact factor: 1.8
ISSN: 21628769, 21628777
Electronic, Optical and Magnetic Materials
Abstract
The κ-Ga2O3 polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films of κ-Ga2O3 has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.
Found
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