Electrochemical and Solid-State Letters

, том 10 , издание 6 , страницы D60

Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium

Тип публикации: Journal Article

Дата публикации: 2007-04-05

The Electrochemical Society

Electrochemical and Solid-State Letters

SJR: 0.794

CiteScore: —

Impact factor: —

ISSN: 10990062, 19448775

DOI: 10.1149/1.2717367

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Physical and Theoretical Chemistry

General Chemical Engineering

Electrochemistry

General Materials Science

Electrical and Electronic Engineering

Краткое описание

Physical properties of bis(2,4-dimethylpentadienyl)ruthenium [Ru(DMPD) 2 ] were compared with those of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp)]. Ru(DMPD) 2 showed a high vapor pressure of 13.3 Pa at 82°C and a decomposition temperature of 210°C, which is 60°C lower than that of Ru(DMPD)(EtCp). Metallic Ru film was deposited on oxidized Si(100) from a Ru(DMPD) 2 -O 2 system in a deposition temperature range from 220 to 400°C by metallorganic chemical vapor deposition (MOCVD), and crystalline metallic Ru films with smooth surfaces were deposited down to 220°C for the first time from a Ru(DMPD) 2 -O 2 system.

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Kawano K. et al. Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium // Electrochemical and Solid-State Letters. 2007. Vol. 10. No. 6. p. D60.

ГОСТ со всеми авторами (до 50) Скопировать

Kawano K., Kosuge H., Oshima N., Funakubo H. Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium // Electrochemical and Solid-State Letters. 2007. Vol. 10. No. 6. p. D60.

RIS |

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TY - JOUR

DO - 10.1149/1.2717367

UR - https://doi.org/10.1149/1.2717367

TI - Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium

T2 - Electrochemical and Solid-State Letters

AU - Kawano, Kazuhisa

AU - Kosuge, Hiroaki

AU - Oshima, Noriaki

AU - Funakubo, Hiroshi

PY - 2007

DA - 2007/04/05

PB - The Electrochemical Society

SP - D60

IS - 6

VL - 10

SN - 1099-0062

SN - 1944-8775

ER -

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@article{2007_Kawano,

author = {Kazuhisa Kawano and Hiroaki Kosuge and Noriaki Oshima and Hiroshi Funakubo},

title = {Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium},

journal = {Electrochemical and Solid-State Letters},

year = {2007},

volume = {10},

publisher = {The Electrochemical Society},

month = {apr},

url = {https://doi.org/10.1149/1.2717367},

number = {6},

pages = {D60},

doi = {10.1149/1.2717367}

}

MLA

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MLA Скопировать

Kawano, Kazuhisa, et al. “Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium.” Electrochemical and Solid-State Letters, vol. 10, no. 6, Apr. 2007, p. D60. https://doi.org/10.1149/1.2717367.

Издатель

The Electrochemical Society

Журнал

Electrochemical and Solid-State Letters

SJR

0.794

CiteScore

—

Impact factor

—

ISSN

10990062 (Print)

19448775 (Electronic)

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