Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates with a misorientation of 6^o between the (100) and (111)A planes. Structural properties and morphology of GaInAsSbBi thin films are studied. Transmission electron microscopy and X-ray diffraction have shown that the films have a polycrystalline structure. It is found that an increase in the Bi concentration in the solid solution leads to a decrease in the average size of the region of coherent scattering by (111) reflection from 20 to 5 nm. It is shown that in films with a lower content of Bi, the thickness of the transition amorphous layer at the ?layer-substrate? heterointerface decreases. Keywords: solid solutions, GaInAsSbBi, GaSb, III-V compounds.