Open Access
Crystals, volume 13, issue 9, pages 1400
Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs
A. V. Polyakov
1
,
K. D. Shcherbachev
1, 2
,
Vladimir I. Nikolaev
1, 3, 4
,
Alexei I. Pechnikov
1, 3, 4
,
A. V. Azarov
6
,
In-Hwan Lee
7
,
A. Vasilev
1
,
А. I. Kochkova
1
,
Ivan V. Shchemerov
1
,
Andrej Kuznetsov
6
,
3
Perfect Crystals LLC, 38k1 Toreza Avenue, off.213, Saint Petersburg 194223, Russia
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Publication type: Journal Article
Publication date: 2023-09-20
Inorganic Chemistry
General Chemical Engineering
Condensed Matter Physics
General Materials Science
Abstract
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor complexes formed by hydrogen with gallium vacancies. A strong anisotropy of hydrogen plasma effects in the most thermodynamically stable β-Ga2O3 are explained by its low-symmetry monoclinic crystal structure. For the metastable, α-, κ- and γ-polymorphs, it is shown that the net result of hydrogenation is often a strong increase in the density of centers supplying electrons in the near-surface regions. These centers are responsible for prominent, persistent photocapacitance and photocurrent effects.
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