Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

, volume 62 , issue SF , pages SF1013

Growth of α-Ga₂O₃ on α-Al₂O₃ by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Jonathan McCandless ¹

Derek Rowe ²

Naomi Pieczulewski ³

Vladimir Protasenko ⁴

M. Alonso-Orts ⁵

Martin S Williams ⁵

Martin Eickhoff ⁶

HUILI G. XING ⁷

David Muller ⁸

Debdeep Jena ⁹

Patrick Vogt ²

Hide authors affiliations Show authors affiliations: 9 affiliations

Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853-0001, UNITED STATES |

Department of Materials Science and Engineering, Cornell University, Ithaca, New York, United States |

Department of Material Science and Engineering, Cornell University, Ithaca, New York, UNITED STATES |

⁴

Electrical and Computer Engineering, Cornell University, Ithaca, 14853-0001, UNITED STATES |

⁵

University of Bremen, Bremen, Bremen, Germany |

⁶

Institute of Solid State Physics, Bremen University of Applied Sciences, Bremen, 28199, GERMANY |

⁷

Cornell University, ithaca, United States |

⁸

School of Applied and Engineering Physics, Cornell University, Ithaca, New York, United States |

⁹

School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, United States |

Publication type: Journal Article

Publication date: 2023-03-23

Japan Society of Applied Physics

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

scimago Q3

wos Q3

SJR: 0.290

CiteScore: 2.9

Impact factor: 1.8

ISSN: 00214922, 13474065

DOI: 10.35848/1347-4065/acbe04

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General Physics and Astronomy

General Engineering

Abstract

We report the growth of α-Ga₂O₃ on m-plane α-Al₂O₃ by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α-Ga₂O₃( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-plane mosaic spread when MOCATAXY is employed for the growth of α-Ga₂O₃. Through the use of In-mediated catalysis, growth rates over 0.2 μm h⁻¹ and rocking curves with full width at half maxima of Δω ≈ 0.45° are achieved. Faceting is observed along the α-Ga₂O₃ film surface and explored through scanning transmission electron microscopy.

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McCandless J. et al. Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy // Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2023. Vol. 62. No. SF. p. SF1013.

GOST all authors (up to 50) Copy

McCandless J., Rowe D., Pieczulewski N., Protasenko V., Alonso-Orts M., Williams M. S., Eickhoff M., XING H. G., Muller D., Jena D., Vogt P. Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy // Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2023. Vol. 62. No. SF. p. SF1013.

RIS |

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RIS Copy

TY - JOUR

DO - 10.35848/1347-4065/acbe04

UR - https://doi.org/10.35848/1347-4065/acbe04

TI - Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

T2 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

AU - McCandless, Jonathan

AU - Rowe, Derek

AU - Pieczulewski, Naomi

AU - Protasenko, Vladimir

AU - Alonso-Orts, M.

AU - Williams, Martin S

AU - Eickhoff, Martin

AU - XING, HUILI G.

AU - Muller, David

AU - Jena, Debdeep

AU - Vogt, Patrick

PY - 2023

DA - 2023/03/23

PB - Japan Society of Applied Physics

SP - SF1013

IS - SF

VL - 62

SN - 0021-4922

SN - 1347-4065

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2023_McCandless,

author = {Jonathan McCandless and Derek Rowe and Naomi Pieczulewski and Vladimir Protasenko and M. Alonso-Orts and Martin S Williams and Martin Eickhoff and HUILI G. XING and David Muller and Debdeep Jena and Patrick Vogt},

title = {Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy},

journal = {Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes},

year = {2023},

volume = {62},

publisher = {Japan Society of Applied Physics},

month = {mar},

url = {https://doi.org/10.35848/1347-4065/acbe04},

number = {SF},

pages = {SF1013},

doi = {10.35848/1347-4065/acbe04}

}

MLA

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MLA Copy

McCandless, Jonathan, et al. “Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy.” Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, vol. 62, no. SF, Mar. 2023, p. SF1013. https://doi.org/10.35848/1347-4065/acbe04.

Publisher

Japan Society of Applied Physics

Journal

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

scimago Q3

wos Q3

SJR

0.290

CiteScore

2.9

Impact factor

1.8

ISSN

00214922 (Print)

13474065 (Electronic)