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The peaceful applications of nuclear energy can only be ensured with the proper application of electronics. BAEC is dedicated to the successful implementation of the "Atomic Energy for Peace" program in the country. On the basis of this objective, the Institute of Electronics with the required basic facilities was established in 1981 at the AERE complex. A strong determination and motivation by a group of dedicated scientists/engineers with good backup from the concerned Authority is keeping everything on the track. The basic purpose of this undertaking is to develop an infrastructure for electronics, both nuclear and non-nuclear on a national scale and at the same time to create a good impact on human resource development.

  1. Energy Materials
Khalid M Hossain 🥼 🤝
Head of Laboratory

Research directions

Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks

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Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks
CsPbI3 has recently received tremendous attention as a possible absorber of perovskite solar cells (PSCs). However, CsPbI3-based PSCs have yet to achieve the high performance of the hybrid PSCs. In this work, we performed a density functional theory (DFT) study using the Cambridge Serial Total Energy Package (CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate its structural, electronic, and optical properties. The calculated electronic band gap (Eg) using the GGA-PBE approach of CASTEP was 1.483 eV for this CsPbI3 absorber. Moreover, the computed density of states (DOS) exhibited the dominant contribution from the Pb-5d orbital, and most charges also accumulated for the Pb atom as seen from the electronic charge density map. Fermi surface calculation showed multiband character and optical properties were computed to investigate the optical response of CsPbI3. Furthermore, we used IGZO, SnO2, WS2, CeO2, PCBM, TiO2, ZnO, and C60as the electron transport layers (ETLs) and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBTS, CFTS, P3HT, PEDOT:PSS, NiO, CuO, and CuI as the hole transport layers (HTLs) to identify the best HTL/CsPbI3/ETL combinations using the SCAPS-1D solar cell simulation software. Among 96 device structures, the best-optimized device structure, ITO/TiO2/CsPbI3/CBTS/Au, was identified, which exhibited an efficiency of 17.9%. The effect of the absorber and ETL thickness, series resistance, shunt resistance, and operating temperature was also evaluated for the six best devices along with their corresponding generation rate, recombination rate, capacitance-voltage, current density-voltage, and quantum efficiency characteristics. The results obtained from SCAPS-1D were also compared with those from wxAMPS simulation results.

Lab address

Bangladesh Atomic Energy Regularity Authority Bhaban, E-12/A, Paramanu Bhaban, Near Aah Towfiq - Md.Towfiq Hossain Avenue, 12/A Shahid Shahabuddin Rd, Dhaka 1207, Bangladesh
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