There is no alternative to effective electronic equipment to ensure peaceful, safe, and appropriate use of nuclear energy. The Bangladesh Atomic Energy Commission is committed to the successful implementation of the "Nuclear Energy for Peace" program. With the aim of implementing this vision, the "Institute of Electronics" was established in 1981 at the Atomic Energy Research Establishment. At present, the institute is being successfully run by a group of dedicated scientists and skilled engineers, and under the active supervision of the concerned authorities. In addition, for the first time in Bangladesh, a Very Large-Scale Integration (VLSI) technology and a Solar Cell fabrication and Research Lab have been established in this institute, to open up a new horizon in microelectronics and for the proper utilization of solar energy, respectively. Its mission is to develop a robust electronics infrastructure at the national level for both nuclear and non-nuclear fields and to make a significant contribution to human resource development in the country.

  1. Energy Materials
M. Hossain 🥼 🤝
Senior Researcher

Research directions

Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks

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Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks
CsPbI3 has recently received tremendous attention as a possible absorber of perovskite solar cells (PSCs). However, CsPbI3-based PSCs have yet to achieve the high performance of the hybrid PSCs. In this work, we performed a density functional theory (DFT) study using the Cambridge Serial Total Energy Package (CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate its structural, electronic, and optical properties. The calculated electronic band gap (Eg) using the GGA-PBE approach of CASTEP was 1.483 eV for this CsPbI3 absorber. Moreover, the computed density of states (DOS) exhibited the dominant contribution from the Pb-5d orbital, and most charges also accumulated for the Pb atom as seen from the electronic charge density map. Fermi surface calculation showed multiband character and optical properties were computed to investigate the optical response of CsPbI3. Furthermore, we used IGZO, SnO2, WS2, CeO2, PCBM, TiO2, ZnO, and C60as the electron transport layers (ETLs) and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBTS, CFTS, P3HT, PEDOT:PSS, NiO, CuO, and CuI as the hole transport layers (HTLs) to identify the best HTL/CsPbI3/ETL combinations using the SCAPS-1D solar cell simulation software. Among 96 device structures, the best-optimized device structure, ITO/TiO2/CsPbI3/CBTS/Au, was identified, which exhibited an efficiency of 17.9%. The effect of the absorber and ETL thickness, series resistance, shunt resistance, and operating temperature was also evaluated for the six best devices along with their corresponding generation rate, recombination rate, capacitance-voltage, current density-voltage, and quantum efficiency characteristics. The results obtained from SCAPS-1D were also compared with those from wxAMPS simulation results.

Publications and patents

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Lab address

Bangladesh Atomic Energy Regularity Authority Bhaban, E-12/A, Paramanu Bhaban, Near Aah Towfiq - Md.Towfiq Hossain Avenue, 12/A Shahid Shahabuddin Rd, Dhaka 1207, Bangladesh
Authorization required.