Sensors and Actuators, A: Physical, volume 303, pages 111705
High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation
Publication type: Journal Article
Publication date: 2020-03-01
Journal:
Sensors and Actuators, A: Physical
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 4.6
ISSN: 09244247
Metals and Alloys
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Instrumentation
Abstract
• Pressure sensor chip utilizing novel electrical circuit with BJT was developed. • The sensitivity increase is 3.6X for new circuit regarding values Wheatstone bridge. • Temperature errors and noise of output signal were minimized. • The reduction of chip size and increase of pressure overload capability. • Placing BJTs on the diaphragm provides only 1%–5% increase of pressure sensitivity. The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size regarding the chip with Wheatstone bridge circuit: 3.6X for circuit utilizing V-NPN BJTs and 2.4X for circuit utilizing L-PNP BJTs. Significant reduction of both noise and temperature instability of output signal has been demonstrated: output signal noise is about 15 μV (U sup = 5 V) and temperature errors have only 2–3 times higher values regarding the chip with Wheatstone bridge circuit.
Citations by journals
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IEEE Sensors Journal
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1 publication, 4.35%
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1 publication, 4.35%
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Sensors and Actuators, A: Physical
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1 publication, 4.35%
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1 publication, 4.35%
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Measurement Science and Technology
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Measurement Science and Technology
1 publication, 4.35%
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Microsystems and Nanoengineering
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Microsystems and Nanoengineering
1 publication, 4.35%
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Citations by publishers
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IEEE
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IEEE
10 publications, 43.48%
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IOP Publishing
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IOP Publishing
7 publications, 30.43%
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Multidisciplinary Digital Publishing Institute (MDPI)
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Multidisciplinary Digital Publishing Institute (MDPI)
3 publications, 13.04%
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Elsevier
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Elsevier
1 publication, 4.35%
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Springer Nature
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Springer Nature
1 publication, 4.35%
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Basov M. High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation // Sensors and Actuators, A: Physical. 2020. Vol. 303. p. 111705.
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Basov M. High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation // Sensors and Actuators, A: Physical. 2020. Vol. 303. p. 111705.
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TY - JOUR
DO - 10.1016/j.sna.2019.111705
UR - https://doi.org/10.1016%2Fj.sna.2019.111705
TI - High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation
T2 - Sensors and Actuators, A: Physical
AU - Basov, Mikhail
PY - 2020
DA - 2020/03/01 00:00:00
PB - Elsevier
SP - 111705
VL - 303
SN - 0924-4247
ER -
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@article{2020_Basov,
author = {Mikhail Basov},
title = {High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation},
journal = {Sensors and Actuators, A: Physical},
year = {2020},
volume = {303},
publisher = {Elsevier},
month = {mar},
url = {https://doi.org/10.1016%2Fj.sna.2019.111705},
pages = {111705},
doi = {10.1016/j.sna.2019.111705}
}
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