Mikhail Viktorovich Basov

PhD in Engineering
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Publications
13
Citations
281
h-index
10

About

Mikhail Basov received the master’s degree in electrical engineering and the Ph.D. degree from MEPhI 2012 and 2022, respectively. In 2010, he started his current job at the Dukhov Automatics Research Institute (VNIIA) as a R&D Engineer (sensors). He has authored more than 10 articles, holds 12 Russian patents, took part in 12 conferences, received 9 awards and reviewed 34 articles. He received the award of University Technology Exposure Program by Wevolver, Mouser Electronics and ANSYS in 2022, and Innovative Leader in the Nuclear Industry by Rosatom in 2019. I have 10+ years of experience in the field of semiconductor industry.

Qualification and Professional skills:

• Development of semiconductor chips (fundamental knowledge of solid-state physics, modeling and topology design) for MEMS (pressure based on piezoresistors, piezotransistors and other), temperature sensors based on p-n junction or Schottky barrier and other microelectronic devices;

• Research and testing of development and mass products at intermediate and final stages of fabrication;

• The hands-on practice, coordinating and controlling BiCMOS and MEMS technological processes: wet chemical treatments, lithography, doping processes (ion implantation, diffusion, annealing and oxidation), deposition processes of dielectric thin films and deposition of metals / conductive layers, creating mechanical structures using wet anisotropic and isotropic etching, microassembly stage;

• Analysis of scientific and technical information, develop / justification of relevant methodological solutions for tasks, reporting and publishing of the results;

• Languages: English (Intermediate) and Russian (Native);

• Working with soft: Synopsys TCAD, AutoCAD, NI Multisim, MS Office. Studying: ANSYS, MatLab, LabView.

My future Ph.D. thesis is titled “High Sensitive Pressure Sensing Chip Utilizing Bipolar Junction Transistors”. Creation of new pressure sensor chip with novel piezosensitive electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) utilizing bipolar-junction transistor. It allows to increase the pressure sensitivity, improve the pressure sensor performance and/or reducing die size while maintaining the same level of output signal and increase strength of membrane structure.

I'm looking for a new job and ready for business travel (relocation). My CV is attached below.

Education

National Research Nuclear University MEPhI
2013 — 2022, Postgraduate, Institute of Nanotechnology in Electronics, Spintronics and Photonics
National Research Nuclear University MEPhI
2006 — 2012, Specialist, Institute of Nanotechnology in Electronics, Spintronics and Photonics

Dissertations

2022, Candidate , Элементы и устройства вычислительной техники и систем управления, 05.13.05
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See full statistics
Total publications
13
Total citations
281
Citations per publication
21.62
Average publications per year
1.63
Average coauthors
0.38
Publications years
2017-2024 (8 years)
h-index
10
i10-index
11
m-index
1.25
o-index
21
g-index
13
w-index
2
Metrics description
h-index
A scientist has an h-index if h of his N publications are cited at least h times each, while the remaining (N - h) publications are cited no more than h times each.
i10-index
The number of the author's publications that received at least 10 links each.
m-index
The researcher's m-index is numerically equal to the ratio of his h-index to the number of years that have passed since the first publication.
o-index
The geometric mean of the h-index and the number of citations of the most cited article of the scientist.
g-index
For a given set of articles, sorted in descending order of the number of citations that these articles received, the g-index is the largest number such that the g most cited articles received (in total) at least g2 citations.
w-index
If w articles of a researcher have at least 10w citations each and other publications are less than 10(w+1) citations, then the researcher's w-index is equal to w.

Fields of science

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8
Electrical and Electronic Engineering, 8, 61.54%
Electrical and Electronic Engineering
8 publications, 61.54%
Electronic, Optical and Magnetic Materials, 4, 30.77%
Electronic, Optical and Magnetic Materials
4 publications, 30.77%
Instrumentation, 4, 30.77%
Instrumentation
4 publications, 30.77%
Condensed Matter Physics, 3, 23.08%
Condensed Matter Physics
3 publications, 23.08%
Metals and Alloys, 2, 15.38%
Metals and Alloys
2 publications, 15.38%
Surfaces, Coatings and Films, 2, 15.38%
Surfaces, Coatings and Films
2 publications, 15.38%
Mechanical Engineering, 2, 15.38%
Mechanical Engineering
2 publications, 15.38%
Mechanics of Materials, 2, 15.38%
Mechanics of Materials
2 publications, 15.38%
Control and Systems Engineering, 2, 15.38%
Control and Systems Engineering
2 publications, 15.38%
Atomic and Molecular Physics, and Optics, 1, 7.69%
Atomic and Molecular Physics, and Optics
1 publication, 7.69%
Mathematical Physics, 1, 7.69%
Mathematical Physics
1 publication, 7.69%
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8

Journals

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IEEE Sensors Journal
4 publications, 30.77%
Sensors and Actuators, A: Physical
2 publications, 15.38%
Journal of Micromechanics and Microengineering
2 publications, 15.38%
Nano- i Mikrosistemnaya Tehnika
2 publications, 15.38%
Physica Scripta
1 publication, 7.69%
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4

Citing journals

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100
IEEE Sensors Journal
92 citations, 32.74%
Journal not defined, 21, 7.47%
Journal not defined
21 citations, 7.47%
Measurement Science and Technology
19 citations, 6.76%
Sensors and Actuators, A: Physical
15 citations, 5.34%
Journal of Micromechanics and Microengineering
15 citations, 5.34%
Sensors
12 citations, 4.27%
Measurement: Journal of the International Measurement Confederation
11 citations, 3.91%
Micromachines
11 citations, 3.91%
Physica Scripta
11 citations, 3.91%
Engineering Research Express
7 citations, 2.49%
Nanotechnology
6 citations, 2.14%
Smart Materials and Structures
5 citations, 1.78%
Flexible and Printed Electronics
5 citations, 1.78%
Journal of Microelectromechanical Systems
5 citations, 1.78%
Materials
4 citations, 1.42%
IEEE Transactions on Instrumentation and Measurement
3 citations, 1.07%
Microsystems and Nanoengineering
3 citations, 1.07%
Science advances
3 citations, 1.07%
Journal of Vacuum Science and Technology B
3 citations, 1.07%
Microelectronics Journal
2 citations, 0.71%
Biosensors
2 citations, 0.71%
Polymers
2 citations, 0.71%
Microsystem Technologies
2 citations, 0.71%
Analog Integrated Circuits and Signal Processing
2 citations, 0.71%
Journal of Imaging
2 citations, 0.71%
Bioinspiration and Biomimetics
2 citations, 0.71%
IEEE Transactions on Circuits and Systems II: Express Briefs
2 citations, 0.71%
IEEE Transactions on Electron Devices
2 citations, 0.71%
IEEE Sensors Letters
2 citations, 0.71%
Journal of Physics Condensed Matter
1 citation, 0.36%
IEEE Electron Device Letters
1 citation, 0.36%
APL Materials
1 citation, 0.36%
Computers in Biology and Medicine
1 citation, 0.36%
Vacuum
1 citation, 0.36%
Photonics
1 citation, 0.36%
Journal of Power Sources
1 citation, 0.36%
IEEJ Transactions on Fundamentals and Materials
1 citation, 0.36%
Advanced Materials
1 citation, 0.36%
Space Optical Remote Sensing
1 citation, 0.36%
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100

Publishers

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Institute of Electrical and Electronics Engineers (IEEE)
4 publications, 30.77%
IOP Publishing
3 publications, 23.08%
Elsevier
2 publications, 15.38%
New Technologies Publishing House
2 publications, 15.38%
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4

Organizations from articles

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Dukhov Research Institute of Automatics
9 publications, 69.23%
Organization not defined, 4, 30.77%
Organization not defined
4 publications, 30.77%
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3
4
5
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8
9

Countries from articles

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8
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12
Russia, 11, 84.62%
Russia
11 publications, 84.62%
Country not defined, 2, 15.38%
Country not defined
2 publications, 15.38%
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8
10
12

Citing organizations

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35
Organization not defined, 34, 12.1%
Organization not defined
34 citations, 12.1%
Dukhov Research Institute of Automatics
8 citations, 2.85%
Aerospace Information Research Institute, Chinese Academy of Sciences
7 citations, 2.49%
North University of China
5 citations, 1.78%
Tsinghua University
4 citations, 1.42%
Xi'an Jiaotong University
4 citations, 1.42%
Wuhan University
4 citations, 1.42%
Vellore Institute of Technology University
3 citations, 1.07%
University of Chinese Academy of Sciences
3 citations, 1.07%
Beihang University
3 citations, 1.07%
University of Electronic Science and Technology of China
3 citations, 1.07%
Nanjing University of Information Science and Technology
3 citations, 1.07%
Institute of Microelectronics, Chinese Academy of Sciences
3 citations, 1.07%
Ataturk University
2 citations, 0.71%
Beijing Institute of Technology
2 citations, 0.71%
Peking University
2 citations, 0.71%
Harbin Institute of Technology
2 citations, 0.71%
Xiamen University
2 citations, 0.71%
Soochow University (Suzhou)
2 citations, 0.71%
Warsaw University of Technology
2 citations, 0.71%
Peter the Great St. Petersburg Polytechnic University
1 citation, 0.36%
South Ural State University
1 citation, 0.36%
Gazi University
1 citation, 0.36%
Firat University
1 citation, 0.36%
Indian Institute of Technology Bombay
1 citation, 0.36%
National Institute of Technology Karnataka, Surathkal
1 citation, 0.36%
National Institute of Technology Meghalaya
1 citation, 0.36%
Andhra University
1 citation, 0.36%
Urmia University
1 citation, 0.36%
Urmia University of Technology
1 citation, 0.36%
Başkent University
1 citation, 0.36%
Bhabha Atomic Research Centre
1 citation, 0.36%
Shanghai Jiao Tong University
1 citation, 0.36%
Fudan University
1 citation, 0.36%
Sichuan University
1 citation, 0.36%
Jilin University
1 citation, 0.36%
Northwestern Polytechnical University
1 citation, 0.36%
China University of Mining and Technology
1 citation, 0.36%
Central South University of Forestry and Technology
1 citation, 0.36%
Nanjing University of Aeronautics and Astronautics
1 citation, 0.36%
Nanjing University of Posts and Telecommunications
1 citation, 0.36%
Southeast University
1 citation, 0.36%
China University of Petroleum (East China)
1 citation, 0.36%
Wuhan University of Technology
1 citation, 0.36%
Wuhan University of Science and Technology
1 citation, 0.36%
Shandong University of Science and Technology
1 citation, 0.36%
Hubei University
1 citation, 0.36%
Nankai University
1 citation, 0.36%
Yanshan University
1 citation, 0.36%
Northeastern University
1 citation, 0.36%
Sun Yat-sen University
1 citation, 0.36%
Chinese Academy of Medical Sciences & Peking Union Medical College
1 citation, 0.36%
Xidian University
1 citation, 0.36%
Shaanxi Normal University
1 citation, 0.36%
Jiangnan University
1 citation, 0.36%
Jinan University
1 citation, 0.36%
Polytechnic University of Milan
1 citation, 0.36%
VTT Technical Research Centre of Finland
1 citation, 0.36%
Université Catholique de Louvain
1 citation, 0.36%
Nanyang Technological University
1 citation, 0.36%
Tianjin University
1 citation, 0.36%
Shanghai Normal University
1 citation, 0.36%
Shanghai University
1 citation, 0.36%
Southern University of Science and Technology
1 citation, 0.36%
Guangdong University of Technology
1 citation, 0.36%
Chinese University of Hong Kong, Shenzhen
1 citation, 0.36%
Chengdu University of Technology
1 citation, 0.36%
Chengdu University of Information Technology
1 citation, 0.36%
Civil Aviation Flight University of China
1 citation, 0.36%
Carnegie Mellon University
1 citation, 0.36%
National Yang Ming Chiao Tung University
1 citation, 0.36%
Chaohu University
1 citation, 0.36%
University of Catania
1 citation, 0.36%
Shaanxi University of Science and Technology
1 citation, 0.36%
Anhui University
1 citation, 0.36%
Deakin University
1 citation, 0.36%
National Science and Technology Development Agency
1 citation, 0.36%
King Mongkut's Institute of Technology North Bangkok
1 citation, 0.36%
National Electronics and Computer Technology Center
1 citation, 0.36%
Virginia Tech
1 citation, 0.36%
University of California, Berkeley
1 citation, 0.36%
Hangzhou Dianzi University
1 citation, 0.36%
Hunan University
1 citation, 0.36%
Lanzhou University
1 citation, 0.36%
University of Science and Technology of China
1 citation, 0.36%
Agency for Science, Technology and Research
1 citation, 0.36%
Institute of Semiconductors, Chinese Academy of Sciences
1 citation, 0.36%
University of Macau
1 citation, 0.36%
National Space Science Center, Chinese Academy of Sciences
1 citation, 0.36%
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences
1 citation, 0.36%
Lodz University of Technology
1 citation, 0.36%
University of Malaga
1 citation, 0.36%
University of York
1 citation, 0.36%
China Geological Survey
1 citation, 0.36%
Institute of High Performance Computing
1 citation, 0.36%
University of Minho
1 citation, 0.36%
Institute of Mechanics, Chinese Academy of Sciences
1 citation, 0.36%
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
1 citation, 0.36%
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
1 citation, 0.36%
Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences
1 citation, 0.36%
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Citing countries

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China, 83, 29.54%
China
83 citations, 29.54%
Country not defined, 18, 6.41%
Country not defined
18 citations, 6.41%
Russia, 11, 3.91%
Russia
11 citations, 3.91%
India, 7, 2.49%
India
7 citations, 2.49%
Turkey, 4, 1.42%
Turkey
4 citations, 1.42%
USA, 3, 1.07%
USA
3 citations, 1.07%
Romania, 3, 1.07%
Romania
3 citations, 1.07%
Italy, 2, 0.71%
Italy
2 citations, 0.71%
Poland, 2, 0.71%
Poland
2 citations, 0.71%
Singapore, 2, 0.71%
Singapore
2 citations, 0.71%
France, 1, 0.36%
France
1 citation, 0.36%
Portugal, 1, 0.36%
Portugal
1 citation, 0.36%
Australia, 1, 0.36%
Australia
1 citation, 0.36%
Belgium, 1, 0.36%
Belgium
1 citation, 0.36%
United Kingdom, 1, 0.36%
United Kingdom
1 citation, 0.36%
Iran, 1, 0.36%
Iran
1 citation, 0.36%
Spain, 1, 0.36%
Spain
1 citation, 0.36%
Saudi Arabia, 1, 0.36%
Saudi Arabia
1 citation, 0.36%
Thailand, 1, 0.36%
Thailand
1 citation, 0.36%
Finland, 1, 0.36%
Finland
1 citation, 0.36%
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  • We do not take into account publications without a DOI.
  • Statistics recalculated daily.
Михаил Викторович Басов, Борис Иванович Химушкин, Денис Анатольевич Холодков
RU174159U1, 2017
Михаил Викторович Басов, Денис Михайлович Пригодский
RU187531U1, 2019
Position
Engineer-technologist of the 1st category
Employment type
Full time
Years
2012 — present
Position
Intern
Employment type
Internship
Years
2010 — 2012