Sensors and Actuators, A: Physical, volume 331, pages 112930
Schottky diode temperature sensor for pressure sensor
Publication type: Journal Article
Publication date: 2021-11-01
Journal:
Sensors and Actuators, A: Physical
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 4.6
ISSN: 09244247
Metals and Alloys
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Instrumentation
Abstract
The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3x1015 cm-3). Forward voltage UF = 208 mV and temperature coefficient TC = -1.635 mV/C (with linearity kT <0.4% for temperature range of -65 to +85 C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 {\mu}A at 25 C and IL < 130 {\mu}A at 85 C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.
Citations by journals
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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
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Citations by publishers
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Multidisciplinary Digital Publishing Institute (MDPI)
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Multidisciplinary Digital Publishing Institute (MDPI)
5 publications, 38.46%
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American Vacuum Society
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3 publications, 23.08%
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Elsevier
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1 publication, 7.69%
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IOP Publishing
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IOP Publishing
1 publication, 7.69%
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IEEE
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IEEE
1 publication, 7.69%
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Basov M. Schottky diode temperature sensor for pressure sensor // Sensors and Actuators, A: Physical. 2021. Vol. 331. p. 112930.
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Basov M. Schottky diode temperature sensor for pressure sensor // Sensors and Actuators, A: Physical. 2021. Vol. 331. p. 112930.
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TY - JOUR
DO - 10.1016/j.sna.2021.112930
UR - https://doi.org/10.1016%2Fj.sna.2021.112930
TI - Schottky diode temperature sensor for pressure sensor
T2 - Sensors and Actuators, A: Physical
AU - Basov, Mikhail
PY - 2021
DA - 2021/11/01 00:00:00
PB - Elsevier
SP - 112930
VL - 331
SN - 0924-4247
ER -
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@article{2021_Basov,
author = {Mikhail Basov},
title = {Schottky diode temperature sensor for pressure sensor},
journal = {Sensors and Actuators, A: Physical},
year = {2021},
volume = {331},
publisher = {Elsevier},
month = {nov},
url = {https://doi.org/10.1016%2Fj.sna.2021.112930},
pages = {112930},
doi = {10.1016/j.sna.2021.112930}
}
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