том 86 издание 4-6 страницы 738-740

Effect of acid anion on the behavior of single component molecular resists incorporating ionic photoacid generators

Тип публикацииJournal Article
Дата публикации2009-04-01
SCImago Q2
WOS Q2
БС1
SJR0.595
CiteScore7.4
Impact factor3.3
ISSN01679317, 18735568
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering
Краткое описание
A series of single component chemically amplified molecular resists were made using an onium salt cation core of tris(4-(tert-butoxycarbonyloxy)-3,5-dimethylphenyl)sulfonium (TAS) with five different acid anions: chloride (Cl), hexafluoroantimonate (SbF6), triflate (Tf), nonaflate (Nf), and tosylate (Ts). The counter-ion had a large effect on both the performance and physical characteristics of the resists. TAS-SbF6 and TAS-Tf imaged as positive tone resists with good LER, but suffered from acid diffusion problems which limited resolution. TAS-Ts and TAS-Cl had high water solubility that prevented their use as positive tone resists. TAS-Nf had poor wetting and adhesion that prevented it from being spin-coated into films. Using onium salts as single molecule resists places great restriction on the choice of anion used because of the large effect it has on the properties of the resist. Using extreme ultraviolet lithography, TAS-SbF6, the best performing derivative, was able to resolve 50nm 1:1 line/space patterns with LER ([email protected]) of 5.2nm.
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ГОСТ |
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Lawson R. A. et al. Effect of acid anion on the behavior of single component molecular resists incorporating ionic photoacid generators // Microelectronic Engineering. 2009. Vol. 86. No. 4-6. pp. 738-740.
ГОСТ со всеми авторами (до 50) Скопировать
Lawson R. A., Lee C., Tolbert L. M., Henderson C. L. Effect of acid anion on the behavior of single component molecular resists incorporating ionic photoacid generators // Microelectronic Engineering. 2009. Vol. 86. No. 4-6. pp. 738-740.
RIS |
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TY - JOUR
DO - 10.1016/j.mee.2008.11.043
UR - https://doi.org/10.1016/j.mee.2008.11.043
TI - Effect of acid anion on the behavior of single component molecular resists incorporating ionic photoacid generators
T2 - Microelectronic Engineering
AU - Lawson, Richard A.
AU - Lee, Cheng-Tsung
AU - Tolbert, Laren M.
AU - Henderson, Clifford L.
PY - 2009
DA - 2009/04/01
PB - Elsevier
SP - 738-740
IS - 4-6
VL - 86
SN - 0167-9317
SN - 1873-5568
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2009_Lawson,
author = {Richard A. Lawson and Cheng-Tsung Lee and Laren M. Tolbert and Clifford L. Henderson},
title = {Effect of acid anion on the behavior of single component molecular resists incorporating ionic photoacid generators},
journal = {Microelectronic Engineering},
year = {2009},
volume = {86},
publisher = {Elsevier},
month = {apr},
url = {https://doi.org/10.1016/j.mee.2008.11.043},
number = {4-6},
pages = {738--740},
doi = {10.1016/j.mee.2008.11.043}
}
MLA
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Lawson, Richard A., et al. “Effect of acid anion on the behavior of single component molecular resists incorporating ionic photoacid generators.” Microelectronic Engineering, vol. 86, no. 4-6, Apr. 2009, pp. 738-740. https://doi.org/10.1016/j.mee.2008.11.043.
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