, том 3 , издание 7 , страницы 2862-2897

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Robin Khosla ^{1, 2}

Shivani Sharma ³

Скрыть аффилиации авторов Показать аффилиации авторов: 3 аффилиации

Institut für Halbleitertechnik (IHT), Universität Stuttgart, Pfaffenwaldring 47, Stuttgart 70569, Germany |

Department of Electronics and Communications Engineering, National Institute of Technology (NIT), Silchar, Assam 788010, India |

School of Computing and Electrical Engineering, Indian Institute of Technology (IIT) - Mandi, Mandi, Himachal Pradesh, 175075, India |

Тип публикации: Journal Article

Дата публикации: 2021-06-30

American Chemical Society (ACS)

ACS Applied Electronic Materials

scimago Q1

wos Q2

БС1

SJR: 1.045

CiteScore: 7.4

Impact factor: 4.7

ISSN: 26376113

DOI: 10.1021/acsaelm.0c00851

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Materials Chemistry

Electronic, Optical and Magnetic Materials

Electrochemistry

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Мияконких Андрей

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Физико-технологический институт имени К.А. Валиева

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Попов Владимир

245 публикаций, 1 431 цитирование, 1 рецензия

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Khosla R., Sharma S. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices // ACS Applied Electronic Materials. 2021. Vol. 3. No. 7. pp. 2862-2897.

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TY - JOUR

DO - 10.1021/acsaelm.0c00851

UR - https://doi.org/10.1021/acsaelm.0c00851

TI - Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

T2 - ACS Applied Electronic Materials

AU - Khosla, Robin

AU - Sharma, Shivani

PY - 2021

DA - 2021/06/30

PB - American Chemical Society (ACS)

SP - 2862-2897

IS - 7

VL - 3

SN - 2637-6113

ER -

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@article{2021_Khosla,

author = {Robin Khosla and Shivani Sharma},

title = {Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices},

journal = {ACS Applied Electronic Materials},

year = {2021},

volume = {3},

publisher = {American Chemical Society (ACS)},

month = {jun},

url = {https://doi.org/10.1021/acsaelm.0c00851},

number = {7},

pages = {2862--2897},

doi = {10.1021/acsaelm.0c00851}

}

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Khosla, Robin, et al. “Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices.” ACS Applied Electronic Materials, vol. 3, no. 7, Jun. 2021, pp. 2862-2897. https://doi.org/10.1021/acsaelm.0c00851.

Издатель

American Chemical Society (ACS)

Журнал

ACS Applied Electronic Materials

scimago Q1

wos Q2

БС1

SJR

1.045

CiteScore

7.4

Impact factor

4.7

ISSN

26376113 (Print, Electronic)