MoS₂ Phototransistors Photogated with a P-N Junction Diode

Lian Z., Wei J., Liu Z., Chen G., Kuo H., Dan Y., Tu C., Yang R.

Balendhran S., Taha M., Wang S., Yan W., Higashitarumizu N., Wen D., Azar N.S., Bullock J., Mulvaney P., Javey A., Crozier K.B.

AbstractFlexible optoelectronics is a rapidly growing field, with a wide range of potential applications. From wearable sensors to bendable solar cells, curved displays, and curved focal plane arrays, the possibilities are endless. The criticality of flexible photodetectors for many of these applications is acknowledged, however, devices that are demonstrated thus far are limited in their spectral range. In this study, flexible photodetectors are demonstrated using a VOx nanoparticle ink, with an extremely broad operating wavelength range of 0.4 to 20 µm. This ink is synthesized using a simple and scalable wet‐chemical process. These photodetectors operate at room temperature and exhibit minimal variance in performance even when bent at angles of up to 100 ° at a bend radius of 6.4 mm. In addition, rigorous strain testing of 100 bend and release cycles revealed a photoresponse with a standard deviation of only 0.55%. This combination of mechanical flexibility, wide spectral response, and ease of fabrication makes these devices highly desirable for a wide range of applications, including low‐cost wearable sensors and hyperspectral imaging systems.

Tang J., Wang Q., Tian J., Li X., Li N., Peng Y., Li X., Zhao Y., He C., Wu S., Li J., Guo Y., Huang B., Chu Y., Ji Y., et. al.

AbstractMonolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS2 on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS2 ICs in portable, wearable, and implantable electronics.

Li W., Gong X., Yu Z., Ma L., Sun W., Gao S., Köroğlu Ç., Wang W., Liu L., Li T., Ning H., Fan D., Xu Y., Tu X., Xu T., et. al.

The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance1,2. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited3–12. In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues3,7. Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ( $$01\bar{1}2$$ ) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 108 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance, threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance13. The excellent electrical performance, stability and variability make antimony ( $$01\bar{1}2$$ ) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon. The electrical contact of two-dimensional transistors is pushed close to the quantum limit by hybridization of the energy bands with antimony; the contacts have low contact resistance and excellent stability.

Luk’yanchuk I., Razumnaya A., Sené A., Tikhonov Y., Vinokur V.M.

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.

Liu X., Choi M.S., Hwang E., Yoo W.J., Sun J.

Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out-of-plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.

Zha J., Luo M., Ye M., Ahmed T., Yu X., Lien D., He Q., Lei D., Ho J.C., Bullock J., Crozier K.B., Tan C.

2D materials, such as graphene, transition metal dichalcogenides, black phosphorus, and tellurium, have been demonstrated to be promising building blocks for the fabrication of next-generation high-performance infrared (IR) photodetectors with diverse device architectures and impressive device performance. Integrating IR photodetectors with nanophotonic structures, such as surface plasmon structures, optical waveguides, and optical cavities, has proven to be a promising strategy to maximize the light absorption of 2D absorbers, thus enhancing the detector performance. In this review, the state-of-the-art progress of IR photodetectors is comprehensively summarized based on 2D materials and nanophotonic structures. First, the advantages of using 2D materials for IR photodetectors are discussed. Following that, 2D material-based IR detectors are classified based on their composition, and their detection mechanisms, key figures-of-merit, and the principle of absorption enhancement are discussed using nanophotonic approaches. Then, recent advances in 2D material-based IR photodetectors are reviewed, categorized by device architecture, i.e., photoconductors, van der Waals heterojunctions, and hybrid systems consisting of 2D materials and nanophotonic structures. The review is concluded by providing perspectives on the challenges and future directions of this field.

Chen R., Ding G., Zhou Y., Han S.

In this review, we summarize the recent progress on how to circumvent FLP between 2D TMD semiconductors and metals.

Shen P., Su C., Lin Y., Chou A., Cheng C., Park J., Chiu M., Lu A., Tang H., Tavakoli M.M., Pitner G., Ji X., Cai Z., Mao N., Wang J., et. al.

Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices1,3. However, owing to metal-induced gap states (MIGS)4–7, energy barriers at the metal–semiconductor interface—which fundamentally lead to high contact resistance and poor current-delivery capability—have constrained the improvement of two-dimensional semiconductor transistors so far2,8,9. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore’s law. Electric contacts of semimetallic bismuth on monolayer semiconductors are shown to suppress metal-induced gap states and thus have very low contact resistance and a zero Schottky barrier height.

Taffelli A., Dirè S., Quaranta A., Pancheri L.

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

Chen K., Zhang C., Zang X., Ma F., Chen Y., Dan Y.

Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain is often explained by the classical gain theory which is unfortunately an implicit function and may even be questionable. In this work, we managed to derive explicit gain equations for hybrid graphene-quantum-dot photodetectors. Due to the work function mismatch, lead sulfide (PbS) quantum dots coated on graphene will form a surface depletion region near the interface of quantum dots and graphene. Light illumination narrows down the surface depletion region, creating a photovoltage that gates the graphene. As a result, high photo gain in graphene is observed. The explicit gain equations are derived from the theoretical gate transfer characteristics of graphene and the correlation of the photovoltage with the light illumination intensity. The derived explicit gain equations fit well with the experimental data, from which physical parameters are extracted.

Tao L., Chen Z., Li Z., Wang J., Xu X., Xu J.

Wang C., Liang S., Wang S., Wang P., Li Z., Wang Z., Gao A., Pan C., Liu C., Liu J., Yang H., Liu X., Song W., Wang C., Cheng B., et. al.

A reconfigurable neural network vision sensor is proposed by using gate-tunable photoresponse of van der Waals heterostructures.

Tan T., Jiang X., Wang C., Yao B., Zhang H.

Graphene and the following derivative 2D materials have been demonstrated to exhibit rich distinct optoelectronic properties, such as broadband optical response, strong and tunable light-mater interactions, and fast relaxations in the flexible nanoscale. Combining with optical platforms like fibers, waveguides, grating, and resonators, these materials has spurred a variety of active and passive applications recently. Herein, the optical and electrical properties of graphene, transition metal dichalcogenides, black phosphorus, MXene, and their derivative van der Waals heterostructures are comprehensively reviewed, followed by the design and fabrication of these 2D material-based optical structures in implementation. Next, distinct devices, ranging from lasers to light emitters, frequency convertors, modulators, detectors, plasmonic generators, and sensors, are introduced. Finally, the state-of-art investigation progress of 2D material-based optoelectronics offers a promising way to realize new conceptual and high-performance applications for information science and nanotechnology. The outlook on the development trends and important research directions are also put forward.

Mennel L., Symonowicz J., Wachter S., Polyushkin D.K., Molina-Mendoza A.J., Mueller T.

Machine vision technology has taken huge leaps in recent years, and is now becoming an integral part of various intelligent systems, including autonomous vehicles and robotics. Usually, visual information is captured by a frame-based camera, converted into a digital format and processed afterwards using a machine-learning algorithm such as an artificial neural network (ANN)1. The large amount of (mostly redundant) data passed through the entire signal chain, however, results in low frame rates and high power consumption. Various visual data preprocessing techniques have thus been developed2–7 to increase the efficiency of the subsequent signal processing in an ANN. Here we demonstrate that an image sensor can itself constitute an ANN that can simultaneously sense and process optical images without latency. Our device is based on a reconfigurable two-dimensional (2D) semiconductor8,9 photodiode10–12 array, and the synaptic weights of the network are stored in a continuously tunable photoresponsivity matrix. We demonstrate both supervised and unsupervised learning and train the sensor to classify and encode images that are optically projected onto the chip with a throughput of 20 million bins per second. A two-dimensional semiconductor photodiode array senses and processes optical images simultaneously without latency, and is trained to classify and encode images with high throughput, acting as an artificial neural network.