Nature, volume 613, issue 7943, pages 274-279

Approaching the quantum limit in two-dimensional semiconductor contacts

Weisheng Li 1
, 
Xiaoshu Gong 2
, 
ZHIHAO YU 1
, 
Liang Ma 2
, 
Wenjie Sun 3
, 
Si Gao 3, 4
, 
Çağıl Köroğlu 5
, 
Wenfeng Wang 1
, 
Lei Liu 1
, 
Taotao Li 1
, 
Hongkai Ning 1
, 
Dongxu Fan 1
, 
Yifei Xu 1
, 
Xuecou Tu 1
, 
Tao Xu 6
, 
Litao Sun 6
, 
Wenhui Wang 2
, 
Junpeng Lu 2
, 
Zhen-Hua Ni 2
, 
Jia Li 7
, 
Xidong Duan 7
, 
Peng Wang 3
, 
Yuefeng Nie 3
, 
Hao Qiu 1
, 
Yi Shi 1
, 
Eric Pop 5, 8, 9
, 
Jinlan Wang 2
, 
Xinran Wang 1, 10, 11
Show full list: 28 authors
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Suzhou Laboratory, Suzhou, China | 
Publication type: Journal Article
Publication date: 2023-01-11
Journal: Nature
scimago Q1
SJR: 18.509
CiteScore: 90.0
Impact factor: 50.5
ISSN: 00280836, 14764687
Multidisciplinary
Abstract
The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance1,2. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited3–12. In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues3,7. Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ( $$01\bar{1}2$$ ) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 108 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance, threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance13. The excellent electrical performance, stability and variability make antimony ( $$01\bar{1}2$$ ) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon. The electrical contact of two-dimensional transistors is pushed close to the quantum limit by hybridization of the energy bands with antimony; the contacts have low contact resistance and excellent stability.
Found 48
By date By citations
IOP Publishing
Visualizing band structure hybridization and superlattice effects in twisted MoS2/WS2 heterobilayers
Jones A.J., Muzzio R., Pakdel S., Biswas D., Curcio D., Lanatà N., Hofmann P., McCreary K.M., Jonker B.T., Watanabe K., Taniguchi T., Singh S., Koch R.J., Jozwiak C., Rotenberg E., et. al.
2D Materials scimago Q1 wos Q2 , 
2021-12-21,  citations by CoLab: 13 ,  Abstract  
Abstract A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two-dimensional (2D) van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS2 and WS2 with twist angles ranging from 2∘ to 20∘ and determine the twist angle-dependent evolution of the electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS2 and WS2 electronic states at the Γ ˉ -point of the Brillouin zone, leading to a shift of the valence band maximum in the heterostructure. Replicas of the hybridized states are observed at the center of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures for a wide range of twist angles.
Institute of Electrical and Electronics Engineers (IEEE)
Sub-200 Ω·µm Alloyed Contacts to Synthetic Monolayer MoS2
Kumar A., Schauble K., Neilson K.M., Tang A., Ramesh P., Wong H.-., Pop E., Saraswat K.
2021-12-11,  citations by CoLab: 37 ,  Abstract  
While two-dimensional (2D) semiconductors like Mos2 are promising for applications in nanoscale transistors, their performance is limited by their contacts. Here, we report contact resistance as low as 190 Ω·µm for In/Au alloy and 270 Ω·µmfor Sn/ Au alloy contacts to monolayer Mos2, which are among the best reported to date. We perform a statistical study of 720 transistors comparing different contact schemes, re-vealing both the ‘best’ and ‘average’ alloyed contacts, as well as their distribution, for the first time. Material characterization confirms the metal contacts are not damaging Mos2 and that the contact metal stacks are alloyed. This combines the benefits of a metal with low work function and low melting point with those of a stable noble metal, resulting in ~450°C temperature tolerance compatible with back-end processing.
Institute of Electrical and Electronics Engineers (IEEE)
Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering
O'Brien K.P., Dorow C.J., Penumatcha A., Maxey K., Lee S., Naylor C.H., Hsiao A., Holybee B., Rogan C., Adams D., Tronic T., Ma S., Oni A., Gupta A.S., Bristol R., et. al.
2021-12-11,  citations by CoLab: 78 ,  Abstract  
2D CMOS transistors fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for silicon transistors at sub-12 nm channel length [L G ]. We demonstrate record NMOS contacts using a high melting point metal, down to 146 Ω-µm contact resistance (Rc). We present the best PMOS performance on a grown monolayer WSe2 film with 50 µA/µm Ion and 141 mV/dec sub-threshold swing (SS) using a Ru contact metal, showing record PMOS contact resistance, Rc = 2.7 kΩ-µm. For the first time, we present 300 mm wafer growth options of 4 different 2D TMD films: MoS 2 , WS2, WSe2, MoSe2 that were grown at BEOL compatible temperatures. On unpassivated channel devices we show two methods of channel curing. First, N2 desiccation can improve ION (~2x) and SS (~0.6×) simultaneously. Secondly, FGA annealing can improve bare channel devices by increasing their median Ion by 10× and lowering their SS by almost 50%. Finally, we benchmark our results against leading grown TMD devices, demonstrating record drive-currents among devices with good SS.
Institute of Electrical and Electronics Engineers (IEEE)
Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics
Chou A., Wu T., Cheng C., Zhan S., Ni I., Wang S., Chang Y., Liew S., Chen E., Chang W., Wu C., Cai J., Wong H.-., Wang H.
2021-12-11,  citations by CoLab: 57 ,  Abstract  
Antimony (Sb) semimetal was studied as a novel contact approach for enabling two-dimensional (2D) material towards advanced electronic device applications. With this approach, an ohmic contact of close to zero Schottky barrier height and contact resistance value of 0.66 kΩ.µm is obtained between Sb and monolayer (1L) molybdenum disulfide (MoS2). Short-channel Sb-contacted MoS 2 field-effect transistors (FET) demonstrated remarkable on-state current above 600 µA/µm and 1000 µA/µm at V DS = 1 V and 2 V, respectively. Comparing to our previous s tudy of tin (Sn) [1] and bismuth (Bi) semimetal contacts [2], Sb contact offers substantially improved thermal stability with a melting point of 630.6 °C as compared to 271.5 °C for Bi and 231.9 °C for Sn semimetals. The comparative electrical characterization of MoS 2 FETs with Sb and Bi contacts after progressive thermal treatments demonstrates fully operational Sb-contacted devices after annealing at 400°C in contrast to 300 °C for Bi-contacted devices, indicating the advantage of Sb towards reaching the thermal budget for back-end-of-the-line (BEOL) compatibility, and hence alleviating the major shortcoming of previously studied Bi and Sn semimetals in terms of their thermal stability issue. The study demonstrates the clear benefits of Sb as a novel semimetal contact option with applications in high performance 2D material device towards beyond-silicon electronics technology.
Springer Nature
Making clean electrical contacts on 2D transition metal dichalcogenides
Wang Y., Chhowalla M.
Nature Reviews Physics scimago Q1 wos Q1 , 
2021-12-03,  citations by CoLab: 162 ,  Abstract  
2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in fabricating devices out of 2D semiconductors is the need for ultra-clean contacts with resistances approaching the quantum limit. The lack of high-quality, low-contact-resistance P-type and N-type contacts on 2D TMDs has limited progress towards the next generation of low-power devices, such as the tunnel field-effect transistors. In this Expert Recommendation, we summarize strategies and provide guidance for making clean van der Waals contacts on monolayered TMD semiconductors. We also discuss the physics of contacts in 2D semiconductors and prospects for achieving quantum conductance. A key challenge in fabricating devices out of 2D materials is in making good electrical contact. This Expert Recommendation discusses the physics of electrical contacts and provides tips on improving contact quality.
Springer Nature
Transistors based on two-dimensional materials for future integrated circuits
Das S., Sebastian A., Pop E., McClellan C.J., Franklin A.D., Grasser T., Knobloch T., Illarionov Y., Penumatcha A.V., Appenzeller J., Chen Z., Zhu W., Asselberghs I., Li L., Avci U.E., et. al.
Nature Electronics scimago Q1 wos Q1 , 
2021-11-25,  citations by CoLab: 609 ,  Abstract  
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be determined. To achieve this, multiple challenges must be overcome, including reducing the contact resistance, developing stable and controllable doping schemes, advancing mobility engineering and improving high-κ dielectric integration. The large-area growth of uniform 2D layers is also required to ensure low defect density, low device-to-device variation and clean interfaces. Here we review the development of 2D field-effect transistors for use in future VLSI technologies. We consider the key performance indicators for aggressively scaled 2D transistors and discuss how these should be extracted and reported. We also highlight potential applications of 2D transistors in conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage and future interconnect technologies. This Review examines the development of field-effect transistors based on two-dimensional materials and considers the challenges that need to be addressed for the devices to be incorporated into very large-scale integration (VLSI) technology.
Springer Nature
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire
Li T., Guo W., Ma L., Li W., Yu Z., Han Z., Gao S., Liu L., Fan D., Wang Z., Yang Y., Lin W., Luo Z., Chen X., Dai N., et. al.
Nature Nanotechnology scimago Q1 wos Q1 , 
2021-09-02,  citations by CoLab: 530 ,  Abstract  
Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore’s law beyond silicon1–3. However, despite extensive efforts4–25, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS2) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS2 domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS2 is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm2 V−1 s−1 and a saturation current of 450 μA μm–1, which are among the highest for monolayer MoS2. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe2 on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics. Unidirectional alignment of MoS2 domains during epitaxial growth on C/A sapphire enables the realization of large-area MoS2 single crystals.
Springer Nature
High-performance flexible nanoscale transistors based on transition metal dichalcogenides
Daus A., Vaziri S., Chen V., Köroğlu Ç., Grady R.W., Bailey C.S., Lee H.R., Schauble K., Brenner K., Pop E.
Nature Electronics scimago Q1 wos Q1 , 
2021-06-17,  citations by CoLab: 177 ,  Abstract  
Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advantages of 2D materials. Here, we report flexible nanoscale FETs based on 2D semiconductors; these are fabricated by transferring chemical-vapour-deposited transition metal dichalcogenides from rigid growth substrates together with nano-patterned metal contacts, using a polyimide film, which becomes the flexible substrate after release. Transistors based on monolayer molybdenum disulfide (MoS2) are created with channel lengths down to 60 nm and on-state currents up to 470 μA μm−1 at a drain–source voltage of 1 V, which is comparable to the performance of flexible graphene and crystalline silicon FETs. Despite the low thermal conductivity of the flexible substrate, we find that heat spreading through the metal gate and contacts is essential to reach such high current densities. We also show that the approach can be used to create flexible FETs based on molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). By transferring two-dimensional semiconductors from rigid growth substrates together with nano-patterned metal contacts, flexible field-effect transistors can be fabricated with channel lengths down to 60 nm.
Springer Nature
Ultralow contact resistance between semimetal and monolayer semiconductors
Shen P., Su C., Lin Y., Chou A., Cheng C., Park J., Chiu M., Lu A., Tang H., Tavakoli M.M., Pitner G., Ji X., Cai Z., Mao N., Wang J., et. al.
Nature scimago Q1 wos Q1 , 
2021-05-12,  citations by CoLab: 918 ,  Abstract  
Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices1,3. However, owing to metal-induced gap states (MIGS)4–7, energy barriers at the metal–semiconductor interface—which fundamentally lead to high contact resistance and poor current-delivery capability—have constrained the improvement of two-dimensional semiconductor transistors so far2,8,9. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore’s law. Electric contacts of semimetallic bismuth on monolayer semiconductors are shown to suppress metal-induced gap states and thus have very low contact resistance and a zero Schottky barrier height.
Filling the gap: thermal properties and device applications of graphene
Wu R., Zhu R., Zhao S., Zhang G., Tian H., Ren T.
Science China Information Sciences scimago Q1 wos Q1 , 
2021-03-02,  citations by CoLab: 16 ,  Abstract  
With the miniaturization and integration of electronic devices, the heat dissipation problems caused by higher power density are getting more serious, limiting the development of integrated circuits industry. Graphene, as a representative of two-dimensional materials, has attracted extensive attention for its excellent thermal properties. Ever since it has been discovered, researches have been carried out and achievements have been made both theoretically and practically. Here, we review the established theories and simulation system for 2D heat conduction, different measurement methods for thermal conductivity and graphene’s device applications. We propose two gaps between different scales and between theoretical prediction and practical effect. Owing to the higher heat dissipation requirements and the endless pursuit of better thermal performance, it is challenging but critical to continue studying and further understand the thermal properties of graphene. Challenges and opportunities are both emphasized. It is hoped that the diversification and progress in morphology and manufacturing technology can bring new development and that graphene can eventually be widely used and make huge changes to micoelectronic industry.
Institute of Electrical and Electronics Engineers (IEEE)
High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts
Chou A., Cheng C., Liew S., Ho P., Wang S., Chang Y., Chang C., Su Y., Huang Z., Fu F., Hsu C., Chung Y., Chang W., Li L., Wu C.
IEEE Electron Device Letters scimago Q1 wos Q2 , 
2021-03-01,  citations by CoLab: 53 ,  Abstract  
Proving the device performance and process feasibility is imperative for the realization of two-dimensional (2D) semiconductor electronics. In this work, we have successfully adopted Tin (Sn) as the Ohmic contact metal to monolayer molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD) and demonstrated superior short channel n-type field effect transistor (nFET) performance reaching an ON-current of 480 μA/μm and keeping the OFF-current below 0.1 nA/μm at VDS = 1 V. These efforts are close to the low power specification of Si transistors in the metrics of International Roadmap for Devices and Systems (IRDS). The performance improvement could be attributed to the re-melting behavior of Sn metal. We suggest that the Sn deposited at lower temperatures could reduce the formation of interfacial defects caused by heat, and high-melting-point capping metal also could assist the re-melting phenomenon of underlying Sn contact layer. These process modifications are helpful to form smooth Sn coverage on MoS 2 , thereby reducing the contact resistance to 0.84 kQ · μm. This work provides a practical pathway to form low-resistance metal contact on 2D semiconductors for performance improvement.
Springer Nature
Benchmarking monolayer MoS2 and WS2 field-effect transistors
Sebastian A., Pendurthi R., Choudhury T.H., Redwing J.M., Das S.
Nature Communications scimago Q1 wos Q1 Open Access , 
2021-01-29,  citations by CoLab: 370 ,  PDF,  Abstract  
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm2 chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm2 V−1 s−1 in WS2 FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits. Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.
American Chemical Society (ACS)
High Current Density in Monolayer MoS2 Doped by AlOx
McClellan C.J., Yalon E., Smithe K.K., Suryavanshi S.V., Pop E.
ACS Nano scimago Q1 wos Q1 , 
2021-01-06,  citations by CoLab: 185 ,  Abstract  
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200$^\circ$ C) sub-stoichiometric AlO$_x$ provides a stable n-doping layer for monolayer MoS$_2$, compatible with circuit integration. This approach achieves carrier densities > 2x10$^{13}$ 1/cm$^2$, sheet resistance as low as ~7 kOhm/sq, and good contact resistance ~480 Ohm.um in transistors from monolayer MoS$_2$ grown by chemical vapor deposition. We also reach record current density of nearly 700 uA/um (>110 MA/cm$^2$) in this three-atom-thick semiconductor while preserving transistor on/off current ratio > $10^6$. The maximum current is ultimately limited by self-heating and could exceed 1 mA/um with better device heat sinking. With their 0.1 nA/um off-current, such doped MoS$_2$ devices approach several low-power transistor metrics required by the international technology roadmap
Institute of Electrical and Electronics Engineers (IEEE)
Introducing 2D-FETs in Device Scaling Roadmap using DTCO
Ahmed Z., Afzalian A., Schram T., Jang D., Verreck D., Smets Q., Schuddinck P., Chehab B., Sutar S., Arutchelvan G., Soussou A., Asselberghs I., Spessot A., Radu I.P., Parvais B., et. al.
2020-12-12,  citations by CoLab: 34 ,  Abstract  
Superior electrostatic control of 2D-FETs enables continued logic power-performance-area (PPA) scaling beyond the 2nm node. Here, we show that WS 2 -based 2D devices give ~40% inverter performance boost against Si at imec 2nm node, using a process-aware DTCO approach. The DTCO is conducted based on an ab-initio calibrated, physical compact model while area scaling is based on contacted gate pitch scaling. Side contacted source/drain, vertically-stacked 2D sheets and fork-sheet architecture are highlighted as key enablers of 2D-FET technology for multiple advanced nodes, using experimentally realistic mobility and Schottky barrier height conditions.
Springer Nature
Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices
Lanza M., Smets Q., Huyghebaert C., Li L.
Nature Communications scimago Q1 wos Q1 Open Access , 
2020-11-10,  citations by CoLab: 82 ,  PDF,  Abstract  
The importance of statistical analyses on 2D materials-based electronic devices and circuits is sometimes overlooked. Here the authors discuss the most pressing integration issues for such devices and emphasize the need for yield, variability, reliability, and stability benchmarking, and outline viable strategies resulting in research papers that are useful for the industry.
Found 300
By date By citations
Elsevier
High-performance transistors with polycrystalline 2D material channels: The influence of gold electrode crystallinity and the layer number of molybdenum disulfide channels
Chang C., Huang P., Lin K., Chang T., Tu W., Kaun C., Lin S.
Applied Surface Science scimago Q1 wos Q1 , 
2025-06-01,  citations by CoLab: 0 , 
Elsevier
Contact engineering for two-dimensional van der Waals semiconductors
Tang J., Li S., Zhan L., Li S.
Materials Today Electronics scimago Q1 Open Access , 
2025-05-01,  citations by CoLab: 0 , 
American Chemical Society (ACS)
Wafer-Scale Evaporated Metallic BiOx as Contact Electrodes of MoS2 Transistors with Enhanced Thermal Stability
Liu Z., Chen J., Ai W., Chen S., He Y., Lv Z., Yang M., Li W., Luo F., Wu J.
Chemistry of Materials scimago Q1 wos Q1 , 
2025-04-08,  citations by CoLab: 0 , 
Wiley
Ultralow Voltage Operation of p‐ and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Niu C., Long L., Zhang Y., Lin Z., Tan P., Lin J., Wu W., Wang H., Ye P.D.
Advanced Materials scimago Q1 wos Q1 , 
2025-04-08,  citations by CoLab: 0 ,  Abstract  
AbstractThe ongoing demand for more energy‐efficient, high‐performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device dimensions. Tellurium (Te), in its 2D form, offers significant potential due to its high carrier mobility and ambipolar characteristics, with the carrier type easily tunable via surface modulation. In this study, atomically controlled material transformations in 2D Te are leveraged to create intimate junctions, enabling near‐ideal field‐effect transistors (FETs) for both n‐type and p‐type operation. A NiTex‐Te contact provides highly transparent interfaces, resulting in low contact resistance, while the TiOx‐Te gate dielectric forms an ultraclean interface with a capacitance equivalent to 0.88 nm equivalent oxide thickness (EOT), where the quantum capacitance of Te is observed. Subthreshold slopes (SS) approach the Boltzmann limit, with a record‐low SS of 3.5 mV dec−1 achieved at 10 K. Furthermore, 2D Te‐based complementary metal‐oxide‐semiconductor (CMOS) inverters are demonstrated operating at an ultralow voltage of 0.08 V with a voltage gain of 7.1 V/V. This work presents a promising approach to forming intimate dielectric/semiconductor and metal/semiconductor junctions for next‐generation low‐power electronic devices.
American Chemical Society (ACS)
CMOS-Compatible Fabrication of 2D Semiconductor-Based CFETs via High-k Dielectric van der Waals Encapsulation
Yan Y., Yan T., Wang F., Zhu Y., Li S., Cai Y., Zhang F., Wang Y., Liu X., Xu K., He J., Zhan X., Lin J., Wang Z.
Nano Letters scimago Q1 wos Q1 , 
2025-04-03,  citations by CoLab: 0 , 
Springer Nature
A RISC-V 32-bit microprocessor based on two-dimensional semiconductors
Ao M., Zhou X., Kong X., Gou S., Chen S., Dong X., Zhu Y., Sun Q., Zhang Z., Zhang J., Zhang Q., Hu Y., Sheng C., Wang K., Wang S., et. al.
Nature scimago Q1 wos Q1 , 
2025-04-02,  citations by CoLab: 0 , 
Institute of Electrical and Electronics Engineers (IEEE)
Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS2 Transistors
Liu Y., Wang Y., Fan Z., Wei J., Khaleghi S.S., Guo S., Lian Z., Wei H., Su Z., Yang R., Kudrawiec R., Dan Y.
IEEE Transactions on Electron Devices scimago Q1 wos Q2 , 
2025-04-01,  citations by CoLab: 0 , 
IOP Publishing
Recent progress in two-dimensional material/group-III nitride hetero-structures and devices
Lin T., Zeng Y., Liao X., Li J., Zhou C., Wang W.
Reports on Progress in Physics scimago Q1 wos Q1 , 
2025-04-01,  citations by CoLab: 0 ,  Abstract  
Abstract Two-dimensional (2D) material (graphene, MoS2, WSe2, MXene, etc)/group-III nitride (GaN, AlN, and their compounds) hetero-structures have been given special attention, on account of their prospective applications in remarkable performance broadband photodetectors, light-emitting diodes, solar cells, memristors, hydrogen sensors, etc. The utilization of advantages of the above two kind materials provides a solution to the dilemma of the degradation of device performance and reliability caused by carrier mobility, contact resistance, lattice mismatch, interface, and other factors. Therefore, the summary of the recent progress of 2D material/group-III nitride hetero-structures is urgent. In this work, it elaborates on interface interaction and stimulation, growth mechanism and device physic of 2D material/group-III nitride hetero-structures. Initially, it investigates the properties of the hetero-structures, combining the theoretical calculations on interface interaction of the heterojunction with experimental study, particularly emphasizing on interface effects on the performance of hetero-materials. The structure modification (band alignments, band edge position, synergetic work function and so on) at interface contributes to the outstanding properties of these hetero-structures. Subsequently, the growth of 2D material/group-III nitride hetero-structures is introduced in detail. The problems solved by the advancing synthesis strategies and the corresponding formation mechanisms are discussed in particular. Afterwards, based on the 2D material/group-III nitride hetero-structures, extending from optoelectronics, electronics, to photocatalyst and sensors, etc, are reviewed. Finally, the prospect of 2D material/group-III nitride hetero-structures is speculated to pave the way for further promotion.
Institute of Electrical and Electronics Engineers (IEEE)
A Novel Metal-Bridging Free Lift-Off Process for Fabricating High-Performance Sub-100-nm Gate Length MoS2 Transistors
Chang Y., Su Y., Hu H., Tsai J., Shih C., Su C., Li P., Chang W., Lin H.
IEEE Transactions on Electron Devices scimago Q1 wos Q2 , 
2025-04-01,  citations by CoLab: 0 , 
Elsevier
First demonstration of monolithic CMOS based on 4-inch three-layer MoTe2
Hu Y., Sheng C., Zhang Z., Sun Q., Zhang J., Gou S., Zhu Y., Dong X., Ao M., Tian Y., He X., Chen H., Wang D., Song Y., Shang J., et. al.
Materials Science and Engineering: R: Reports scimago Q1 wos Q1 , 
2025-04-01,  citations by CoLab: 0 , 
Elsevier
Single atom Pt supported by two-dimensional transition metal dichalcogenides for photocatalytic removal of harmful gases: A density functional theory study
Zhang W., Gao D., Zhao Y., Li Z., Huang W., Huang T., Wu B.
Next Materials Open Access , 
2025-04-01,  citations by CoLab: 0 , 
American Chemical Society (ACS)
Improved Hysteresis of High-Performance p-Type WSe2 Transistors with Native Oxide WOx Interfacial Layer
Lan H., Tan Y., Yang S., Liu X., Shang Z., Appenzeller J., Chen Z.
Nano Letters scimago Q1 wos Q1 , 
2025-03-31,  citations by CoLab: 0 , 
Wiley
Semiconductor‐to‐metal transition in platinum dichalcogenides induced by niobium dichalcogenides
Zhang L., Zhou X., Yang T., Chen Y., Wang F., Cheng H., Zhou D., Eda G., Liu Z., Wee A.T.
InfoMat scimago Q1 wos Q1 Open Access , 
2025-03-28,  citations by CoLab: 0 ,  PDF,  Abstract  
AbstractMetallizing 2D semiconductors is a crucial research area with significant applications, such as reducing the contact resistance at metal/2D semiconductor interfaces. This is a key challenge in the realization of next‐generation low‐power and high‐performance devices. While various methods exist for metallizing Mo‐ and W‐based 2D semiconductors like MoS2 and WSe2, effective approaches for Pt‐based ones have been lacking. This study demonstrates that platinum dichalcogenides (PtX2, X = Se or Te) undergo a semiconductor‐to‐metal transition when grown on niobium dichalcogenides (NbX2, X = Se or Te). PtX2/NbX2 heterostructures were fabricated using molecular beam epitaxy (MBE) and characterized by Raman spectra, scanning transmission electron microscopy (STEM) and scanning tunneling microscopy/spectroscopy (STM/STS). Raman spectra and STEM confirm the growth of 1T‐phase PtX2 and 1H‐phase NbX2. Both 2D STS mapping and layer‐dependent STS show that regardless of their layer numbers, both pristine semiconducting PtSe2 and PtTe2 are converted to metallic forms when interfacing with NbSe2 or NbTe2. Density functional theory (DFT) calculations suggest that the metallization of PtSe2 on NbX2 and PtTe2 on NbTe2 results from interfacial orbital hybridization, while for PtTe2 on NbSe2, it is due to the strong p‐doping effect caused by interfacial charge transfer. Our work provides an effective method for metallizing PtX2 semiconductors, which may lead to significant applications such as reducing the contact resistance at metal electrode/2D semiconductor interfaces and developing devices like rectifiers, rectenna, and photodetectors based on 2D Schottky diodes.image
Wiley
Rational Design and Characterization of 2D Metal‐Semiconductor Junctions for Optoelectronics by Combining Quantum Transport and Excited State Carrier Dynamics Simulations: Case of 2H‐WTe2 Based Junctions
Pan C., Sun D., Gong W., Xu L., Zhang X., Shi A., Li Y., Niu X.
Small Methods scimago Q1 wos Q1 , 
2025-03-27,  citations by CoLab: 0 ,  Abstract  
AbstractRising 2D metal‐semiconductor junctions (MSJs) greatly advance nanoelectronics. Currently, evaluating the performance of MSJs mainly relies on determining the formation of Ohmic or Schottky contacts through static electronic structures. However, when MSJs are integrated into optoelectronic devices, dynamic transport and excited state carrier dynamics become crucial, yet the impact of the interface remains unclear. Herein, taking 2H‐WTe2 based vertical and lateral MSJs as examples, their performances are evaluated in the perspective of ground and excited states. Faced with the significant band hybridization induced by strong interfacial coupling, identifying Ohmic contact only by analyzing electronic structures possibly becomes defunct. Through quantum transport simulation, the junction with the largest on‐state current can be further filtered. Meanwhile, non‐adiabatic molecular dynamics simulation uncovers the carrier lifetime can be shortened or extended as the interfaces are formed, which depends on the competitive relationship between electron‐phonon coupling and trap states. In these MSJs studied, the photoexcited carriers with the nanosecond lifetime can be rapidly conducted away by electrodes, indicating a high‐effect utilization rate. The work advances the all‐around routine for rational designing and characterizing 2D MSJs.
American Chemical Society (ACS)
Lowering Contact Resistance by Quasi-Covalent Bonding in a Sr2N-WSe2 Donor–Acceptor Heterostructure
Jia Z., Zhang X., Jiang Z., Zhang Z.
Journal of Physical Chemistry C scimago Q1 wos Q3 , 
2025-03-26,  citations by CoLab: 0 , 

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Journals

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Nano Letters
Nano Letters, 19, 6.76%
ACS applied materials & interfaces
ACS applied materials & interfaces, 16, 5.69%
ACS Nano
ACS Nano, 16, 5.69%
Nature Electronics
Nature Electronics, 14, 4.98%
Advanced Functional Materials
Advanced Functional Materials, 10, 3.56%
ACS Applied Electronic Materials
ACS Applied Electronic Materials, 10, 3.56%
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 10, 3.56%
Advanced Materials
Advanced Materials, 7, 2.49%
Science Bulletin
Science Bulletin, 5, 1.78%
Nano Research
Nano Research, 5, 1.78%
Nature
Nature, 5, 1.78%
IEEE Electron Device Letters
IEEE Electron Device Letters, 5, 1.78%
Small
Small, 5, 1.78%
Nanomaterials
Nanomaterials, 5, 1.78%
Chemical Reviews
Chemical Reviews, 5, 1.78%
Nature Communications
Nature Communications, 5, 1.78%
Science China Information Sciences, 4, 1.42%
Applied Physics Letters
Applied Physics Letters, 4, 1.42%
Physical Review Applied
Physical Review Applied, 4, 1.42%
Journal Physics D: Applied Physics
Journal Physics D: Applied Physics, 4, 1.42%
npj 2D Materials and Applications
npj 2D Materials and Applications, 4, 1.42%
ACS Applied Nano Materials
ACS Applied Nano Materials, 3, 1.07%
Physical Chemistry Chemical Physics
Physical Chemistry Chemical Physics, 3, 1.07%
Nature Nanotechnology
Nature Nanotechnology, 3, 1.07%
Nano-Micro Letters
Nano-Micro Letters, 3, 1.07%
Advanced Electronic Materials
Advanced Electronic Materials, 3, 1.07%
National Science Review
National Science Review, 3, 1.07%
Nature Reviews Electrical Engineering
Nature Reviews Electrical Engineering, 3, 1.07%
Advanced Science
Advanced Science, 3, 1.07%
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Publishers

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American Chemical Society (ACS)
American Chemical Society (ACS), 77, 27.4%
Springer Nature
Springer Nature, 56, 19.93%
Wiley
Wiley, 36, 12.81%
Elsevier
Elsevier, 25, 8.9%
Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers (IEEE), 24, 8.54%
IOP Publishing
IOP Publishing, 15, 5.34%
Royal Society of Chemistry (RSC)
Royal Society of Chemistry (RSC), 14, 4.98%
AIP Publishing
AIP Publishing, 7, 2.49%
American Physical Society (APS)
American Physical Society (APS), 5, 1.78%
MDPI
MDPI, 5, 1.78%
Science in China Press, 3, 1.07%
Oxford University Press
Oxford University Press, 3, 1.07%
American Association for the Advancement of Science (AAAS)
American Association for the Advancement of Science (AAAS), 2, 0.71%
Taylor & Francis
Taylor & Francis, 1, 0.36%
Frontiers Media S.A.
Frontiers Media S.A., 1, 0.36%
Research Square Platform LLC, 1, 0.36%
American Vacuum Society
American Vacuum Society, 1, 0.36%
Optica Publishing Group
Optica Publishing Group, 1, 0.36%
Tsinghua University Press
Tsinghua University Press, 1, 0.36%
Institute of Electrical Engineers of Japan (IEE Japan)
Institute of Electrical Engineers of Japan (IEE Japan), 1, 0.36%
SPIE-Intl Soc Optical Eng
SPIE-Intl Soc Optical Eng, 1, 0.36%
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