volume 16 issue 1 pages 74-79

Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion

Publication typeJournal Article
Publication date2015-12-15
scimago Q1
wos Q1
SJR2.967
CiteScore14.9
Impact factor9.1
ISSN15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Abstract
The electronic structure of 2D semiconductors depends on their thickness, providing new opportunities to engineer semiconductors for energy conversion, electronics, and catalysis. Here we show how a 3D semiconductor, black phosphorus, becomes active for solar-to-chemical energy conversion when it is thinned to a 2D material. The increase in its band gap, from 0.3 eV (3D) to 2.1 eV (2D monolayer), is accompanied by a 40-fold enhancement in the formation of chemical products. Despite this enhancement, smaller flakes also have shorter excited state lifetimes. We deduce a mechanism in which recombination occurs at flake edges, while the "van der Waals" surface of black phosphorus bonds to chemical intermediates and facilitates electron transfer. The unique properties of black phosphorus highlight its potential as a customizable material for solar energy conversion and catalysis, while also allowing us to identify design rules for 2D photocatalysts that will enable further improvements in these materials.
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GOST |
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GOST Copy
Hu J. et al. Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion // Nano Letters. 2015. Vol. 16. No. 1. pp. 74-79.
GOST all authors (up to 50) Copy
Hu J., Guo Z., Mcwilliams P. E., Darges J. E., Druffel D. L., Moran A. M., Warren S. C. Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion // Nano Letters. 2015. Vol. 16. No. 1. pp. 74-79.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acs.nanolett.5b02895
UR - https://doi.org/10.1021/acs.nanolett.5b02895
TI - Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion
T2 - Nano Letters
AU - Hu, Jun
AU - Guo, Zhenkun
AU - Mcwilliams, Peter E
AU - Darges, John E
AU - Druffel, Daniel L
AU - Moran, Andrew M.
AU - Warren, Scott C.
PY - 2015
DA - 2015/12/15
PB - American Chemical Society (ACS)
SP - 74-79
IS - 1
VL - 16
PMID - 26651872
SN - 1530-6984
SN - 1530-6992
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2015_Hu,
author = {Jun Hu and Zhenkun Guo and Peter E Mcwilliams and John E Darges and Daniel L Druffel and Andrew M. Moran and Scott C. Warren},
title = {Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion},
journal = {Nano Letters},
year = {2015},
volume = {16},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/acs.nanolett.5b02895},
number = {1},
pages = {74--79},
doi = {10.1021/acs.nanolett.5b02895}
}
MLA
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MLA Copy
Hu, Jun, et al. “Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion.” Nano Letters, vol. 16, no. 1, Dec. 2015, pp. 74-79. https://doi.org/10.1021/acs.nanolett.5b02895.