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Electronics Letters, volume 37, issue 2, pages 93

Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

G. Steinle ¹

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Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany |

Publication type: Journal Article

Publication date: 2002-07-26

Institution of Engineering and Technology (IET)

Journal: Electronics Letters

scimago Q3

wos Q4

SJR: 0.323

CiteScore: 2.7

Impact factor: 0.7

ISSN: 00135194, 1350911X

DOI: 10.1049/el:20010098

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Electrical and Electronic Engineering

Abstract

The authors report on electrically pumped MBE-grown VCSELs on GaAs substrate with an InGaAsN active region, emitting above 1.28 µm with record characteristics. The CW output power at room temperature exceeds 500 µW with an initial slope efficiency of 0.17 W/A.

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Steinle G. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature // Electronics Letters. 2002. Vol. 37. No. 2. p. 93.

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TY - JOUR

DO - 10.1049/el:20010098

UR - https://doi.org/10.1049/el:20010098

TI - Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

T2 - Electronics Letters

AU - Steinle, G.

PY - 2002

DA - 2002/07/26

PB - Institution of Engineering and Technology (IET)

SP - 93

IS - 2

VL - 37

SN - 0013-5194

SN - 1350-911X

ER -

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@article{2002_Steinle,

author = {G. Steinle},

title = {Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature},

journal = {Electronics Letters},

year = {2002},

volume = {37},

publisher = {Institution of Engineering and Technology (IET)},

month = {jul},

url = {https://doi.org/10.1049/el:20010098},

number = {2},

pages = {93},

doi = {10.1049/el:20010098}

}

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Steinle, G., et al. “Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature.” Electronics Letters, vol. 37, no. 2, Jul. 2002, p. 93. https://doi.org/10.1049/el:20010098.

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Publisher

Institution of Engineering and Technology (IET)

Journal

Electronics Letters

scimago Q3

wos Q4

SJR

0.323

CiteScore

2.7

Impact factor

0.7

ISSN

00135194 (Print)

1350911X (Electronic)