Applied Physics Letters, volume 102, issue 19, pages 192603

Theoretical model of superconducting spintronic SIsFS devices

S V Bakurskiy 1, 2
N V Klenov 1, 2
I I Soloviev 1
V V Bolginov 3
I V Vernik 4
O A Mukhanov 4
Show full list: 9 authors
Publication typeJournal Article
Publication date2013-05-13
scimago Q1
SJR0.976
CiteScore6.4
Impact factor3.5
ISSN00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract

Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0.99Fe0.01-Nb junctions.

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