Applied Physics Letters

, том 106 , издание 13 , страницы 132101

Movement of basal plane dislocations in GaN during electron beam irradiation

E. B. Yakimov ^{1, 2}

P S Vergeles ¹

A. Y. Polyakov ²

In-Hwan Lee ³

S. J. Pearton ⁴

Скрыть аффилиации авторов Показать аффилиации авторов: 4 аффилиации

Institute of Microelectronics Technology and High Purity Materials 1 , Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia |

National University of Science and Technology MISiS 2 , Leninskiy pr. 4, Moscow 119049, Russia |

Chonbuk National University 3 School of Advanced Materials Engineering and Research Center of Advanced Materials Development, , Jeonju 561-756, South Korea |

⁴

University of Florida 4 , Gainesville, Florida 32611, USA |

Тип публикации: Journal Article

Дата публикации: 2015-03-30

AIP Publishing

Applied Physics Letters

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wos Q2

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SJR: 0.896

CiteScore: 6.1

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ISSN: 00036951, 10773118

DOI: 10.1063/1.4916632

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Physics and Astronomy (miscellaneous)

Краткое описание

The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.

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Физико-технический институт им. А.Ф. Иоффе РАН

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Санкт-Петербургский государственный университет

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Yakimov E. B. et al. Movement of basal plane dislocations in GaN during electron beam irradiation // Applied Physics Letters. 2015. Vol. 106. No. 13. p. 132101.

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Yakimov E. B., Vergeles P. S., Polyakov A. Y., Lee I., Pearton S. J. Movement of basal plane dislocations in GaN during electron beam irradiation // Applied Physics Letters. 2015. Vol. 106. No. 13. p. 132101.

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TY - JOUR

DO - 10.1063/1.4916632

UR - https://doi.org/10.1063/1.4916632

TI - Movement of basal plane dislocations in GaN during electron beam irradiation

T2 - Applied Physics Letters

AU - Yakimov, E. B.

AU - Vergeles, P S

AU - Polyakov, A. Y.

AU - Lee, In-Hwan

AU - Pearton, S. J.

PY - 2015

DA - 2015/03/30

PB - AIP Publishing

SP - 132101

IS - 13

VL - 106

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

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@article{2015_Yakimov,

author = {E. B. Yakimov and P S Vergeles and A. Y. Polyakov and In-Hwan Lee and S. J. Pearton},

title = {Movement of basal plane dislocations in GaN during electron beam irradiation},

journal = {Applied Physics Letters},

year = {2015},

volume = {106},

publisher = {AIP Publishing},

month = {mar},

url = {https://doi.org/10.1063/1.4916632},

number = {13},

pages = {132101},

doi = {10.1063/1.4916632}

}

MLA

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Yakimov, E. B., et al. “Movement of basal plane dislocations in GaN during electron beam irradiation.” Applied Physics Letters, vol. 106, no. 13, Mar. 2015, p. 132101. https://doi.org/10.1063/1.4916632.

Издатель

AIP Publishing

Журнал

Applied Physics Letters

scimago Q1

wos Q2

БС1

SJR

0.896

CiteScore

6.1

Impact factor

3.6

ISSN

00036951 (Print)

10773118 (Electronic)

Лаборатории

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