Open Access

APL Materials, volume 7, issue 5, pages 51103

Deep trap spectra of Sn-doped α-Ga₂O₃ grown by halide vapor phase epitaxy on sapphire

A. Y. Polyakov ¹

N. B. Smirnov ¹

I. V. Shchemerov ¹

K. D. Shcherbachev ^{1, 2}

V. I. Nikolaev ^{3, 4}

S. I. Stepanov ^{3, 4}

A. I. Pechnikov ^{3, 4}

A. M. Chernykh ^{1, 5}

K. D. Shcherbachev ¹

A S Shikoh ¹

A Kochkova ¹

A. A. Vasilev ¹

Stephen J. Pearton ⁶

Show full list: 13 authors

Hide authors affiliations

National University of Science and Technology MISiS 1 , Moscow 119049, Russia |

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science 2 , 6 Academician Ossipyan Str., Chernogolovka, Moscow Region 142432, Russia |

Perfect Crystals LLC 3 , 28 Politekhnicheskaya Str., 194064 St. Petersburg, Russia |

⁴

Ioffe Physico-Technical Institute 4 , 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia |

⁵

Pulsar Scientific and Production Enterprise, Joint Stock Company 5 , Okruzhnoy Way, House 27, Moscow 105187, Russia |

⁶

Department of Materials Science and Engineering, University of Florida 6 , Gainesville, Florida 32611, USA |

Publication type: Journal Article

Publication date: 2019-05-01

AIP Publishing

Journal: APL Materials

scimago Q1

SJR: 1.527

CiteScore: 9.6

Impact factor: 5.3

ISSN: 2166532X

DOI: 10.1063/1.5094787

Copy DOI

General Materials Science

General Engineering

Abstract

Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest doped samples revealed dominant A traps with level Ec − 0.6 eV and B traps near Ec − 1.1 eV. With increasing shallow donor concentration, the density of the A traps increased, and new traps C (Ec − 0.85 eV) and D (Ec − 0.23 eV) emerged. Photocapacitance spectra showed the presence of deep traps with optical ionization energy of ∼2 and 2.7 eV and prominent persistent photocapacitance at low temperature, surviving heating to temperatures above room temperature. The diffusion length of nonequilibrium charge carriers was 0.15 µm, and microcathodoluminescence spectra showed peaks in the range 339–540 nm, but no band-edge emission.

By date By citations

	1 2 3 4
APL Materials	APL Materials, 4, 10.26% APL Materials 4 publications, 10.26%
ECS Journal of Solid State Science and Technology	ECS Journal of Solid State Science and Technology, 4, 10.26% ECS Journal of Solid State Science and Technology 4 publications, 10.26%
Journal Physics D: Applied Physics	Journal Physics D: Applied Physics, 4, 10.26% Journal Physics D: Applied Physics 4 publications, 10.26%
Applied Physics Letters	Applied Physics Letters, 3, 7.69% Applied Physics Letters 3 publications, 7.69%
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 3, 7.69% Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 3 publications, 7.69%
AIP Advances	AIP Advances, 2, 5.13% AIP Advances 2 publications, 5.13%
Journal of Applied Physics	Journal of Applied Physics, 2, 5.13% Journal of Applied Physics 2 publications, 5.13%
Physica Status Solidi (B): Basic Research	Physica Status Solidi (B): Basic Research, 2, 5.13% Physica Status Solidi (B): Basic Research 2 publications, 5.13%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 1, 2.56% Journal of Materials Science: Materials in Electronics 1 publication, 2.56%
Electronic Materials Letters	Electronic Materials Letters, 1, 2.56% Electronic Materials Letters 1 publication, 2.56%
Journal of Materials Science	Journal of Materials Science, 1, 2.56% Journal of Materials Science 1 publication, 2.56%
Nanomaterials	Nanomaterials, 1, 2.56% Nanomaterials 1 publication, 2.56%
Sensors and Actuators, B: Chemical	Sensors and Actuators, B: Chemical, 1, 2.56% Sensors and Actuators, B: Chemical 1 publication, 2.56%
Journal of Alloys and Compounds	Journal of Alloys and Compounds, 1, 2.56% Journal of Alloys and Compounds 1 publication, 2.56%
Materials Science in Semiconductor Processing	Materials Science in Semiconductor Processing, 1, 2.56% Materials Science in Semiconductor Processing 1 publication, 2.56%
IEEE Sensors Journal	IEEE Sensors Journal, 1, 2.56% IEEE Sensors Journal 1 publication, 2.56%
ACS Applied Electronic Materials	ACS Applied Electronic Materials, 1, 2.56% ACS Applied Electronic Materials 1 publication, 2.56%
Semiconductors	Semiconductors, 1, 2.56% Semiconductors 1 publication, 2.56%
Technical Physics Letters	Technical Physics Letters, 1, 2.56% Technical Physics Letters 1 publication, 2.56%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1, 2.56% Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 1 publication, 2.56%
Technical Physics	Technical Physics, 1, 2.56% Technical Physics 1 publication, 2.56%
Industrial laboratory Diagnostics of materials	Industrial laboratory Diagnostics of materials, 1, 2.56% Industrial laboratory Diagnostics of materials 1 publication, 2.56%
Physical Review Materials	Physical Review Materials, 1, 2.56% Physical Review Materials 1 publication, 2.56%
	1 2 3 4

	2 4 6 8 10 12
AIP Publishing	AIP Publishing, 11, 28.21% AIP Publishing 11 publications, 28.21%
The Electrochemical Society	The Electrochemical Society, 4, 10.26% The Electrochemical Society 4 publications, 10.26%
IOP Publishing	IOP Publishing, 4, 10.26% IOP Publishing 4 publications, 10.26%
American Vacuum Society	American Vacuum Society, 3, 7.69% American Vacuum Society 3 publications, 7.69%
Springer Nature	Springer Nature, 3, 7.69% Springer Nature 3 publications, 7.69%
Elsevier	Elsevier, 3, 7.69% Elsevier 3 publications, 7.69%
Pleiades Publishing	Pleiades Publishing, 3, 7.69% Pleiades Publishing 3 publications, 7.69%
Wiley	Wiley, 2, 5.13% Wiley 2 publications, 5.13%
MDPI	MDPI, 1, 2.56% MDPI 1 publication, 2.56%
Institute of Electrical and Electronics Engineers (IEEE)	Institute of Electrical and Electronics Engineers (IEEE), 1, 2.56% Institute of Electrical and Electronics Engineers (IEEE) 1 publication, 2.56%
American Chemical Society (ACS)	American Chemical Society (ACS), 1, 2.56% American Chemical Society (ACS) 1 publication, 2.56%
Japan Society of Applied Physics	Japan Society of Applied Physics, 1, 2.56% Japan Society of Applied Physics 1 publication, 2.56%
TEST-ZL Publishing	TEST-ZL Publishing, 1, 2.56% TEST-ZL Publishing 1 publication, 2.56%
American Physical Society (APS)	American Physical Society (APS), 1, 2.56% American Physical Society (APS) 1 publication, 2.56%
	2 4 6 8 10 12

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.

Publication PDF

Metrics

Cite this

GOST | RIS | BibTex | MLA

Found error?

Publisher

AIP Publishing

Journal

APL Materials

scimago Q1

SJR

1.527

CiteScore

9.6

Impact factor

5.3

ISSN

2166532X (Print, Electronic)

Labs

Laboratory of Ultra-wide Bandgap Semiconductors (LUWS)

Profiles

Deep trap spectra of Sn-doped α-Ga₂O₃ grown by halide vapor phase epitaxy on sapphire

Top-30

Journals

Publishers

Are you a researcher?

Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

Top-30

Journals

Publishers

Are you a researcher?

Deep trap spectra of Sn-doped α-Ga₂O₃ grown by halide vapor phase epitaxy on sapphire