Applied Physics Letters

, том 63 , издание 20 , страницы 2842-2844

Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor

Тип публикации: Journal Article

Дата публикации: 1993-11-15

AIP Publishing

Applied Physics Letters

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WOS Q2

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SJR: 0.856

CiteScore: 5.8

Impact factor: 3.8

ISSN: 00036951, 10773118

DOI: 10.1063/1.110304

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Physics and Astronomy (miscellaneous)

Краткое описание

Copper films have been deposited by low pressure chemical vapor deposition from mixtures of the Cu+1 precursor copper hexafluoroacetylacetonate vinyltrimethylsilane and water vapor. The addition of water vapor at the optimum concentration more than doubles the deposition rate and substantially reduces the nucleation time without adversely affecting the copper film resistivity, but excess amounts of water vapor significantly increase the copper resistivity. Auger electron spectroscopy analysis detects no impurities in copper films deposited under optimum water conditions, but detects oxygen in films deposited under excess water conditions, suggesting copper oxide formation.

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ГОСТ |

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Gelatos A. V. et al. Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor // Applied Physics Letters. 1993. Vol. 63. No. 20. pp. 2842-2844.

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Gelatos A. V., Marsh R., Kottke M., Mogab C. J. Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor // Applied Physics Letters. 1993. Vol. 63. No. 20. pp. 2842-2844.

RIS |

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TY - JOUR

DO - 10.1063/1.110304

UR - https://doi.org/10.1063/1.110304

TI - Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor

T2 - Applied Physics Letters

AU - Gelatos, A V

AU - Marsh, R.

AU - Kottke, M.

AU - Mogab, C. J.

PY - 1993

DA - 1993/11/15

PB - AIP Publishing

SP - 2842-2844

IS - 20

VL - 63

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

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@article{1993_Gelatos,

author = {A V Gelatos and R. Marsh and M. Kottke and C. J. Mogab},

title = {Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor},

journal = {Applied Physics Letters},

year = {1993},

volume = {63},

publisher = {AIP Publishing},

month = {nov},

url = {https://doi.org/10.1063/1.110304},

number = {20},

pages = {2842--2844},

doi = {10.1063/1.110304}

}

MLA

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Gelatos, A. V., et al. “Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor.” Applied Physics Letters, vol. 63, no. 20, Nov. 1993, pp. 2842-2844. https://doi.org/10.1063/1.110304.

Издатель

AIP Publishing

Журнал

Applied Physics Letters

SCImago Q1

WOS Q2

БС1