Theoretical model of superconducting spintronic SIsFS devices
Тип публикации: Journal Article
Дата публикации: 2013-05-13
scimago Q1
wos Q2
БС1
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Краткое описание
Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0.99Fe0.01-Nb junctions.
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Bakurskiy S. V. et al. Theoretical model of superconducting spintronic SIsFS devices // Applied Physics Letters. 2013. Vol. 102. No. 19. p. 192603.
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Bakurskiy S. V., Klenov N. V., Soloviev I. I., Bolginov V. V., Ryazanov V. V., Vernik I. V., Mukhanov O. A., Kupriyanov M. Yu., Golubov A. A. Theoretical model of superconducting spintronic SIsFS devices // Applied Physics Letters. 2013. Vol. 102. No. 19. p. 192603.
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TY - JOUR
DO - 10.1063/1.4805032
UR - https://doi.org/10.1063/1.4805032
TI - Theoretical model of superconducting spintronic SIsFS devices
T2 - Applied Physics Letters
AU - Bakurskiy, S V
AU - Klenov, N V
AU - Soloviev, I I
AU - Bolginov, V V
AU - Ryazanov, V. V.
AU - Vernik, I V
AU - Mukhanov, O A
AU - Kupriyanov, M Yu
AU - Golubov, A. A.
PY - 2013
DA - 2013/05/13
PB - AIP Publishing
SP - 192603
IS - 19
VL - 102
SN - 0003-6951
SN - 1077-3118
ER -
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@article{2013_Bakurskiy,
author = {S V Bakurskiy and N V Klenov and I I Soloviev and V V Bolginov and V. V. Ryazanov and I V Vernik and O A Mukhanov and M Yu Kupriyanov and A. A. Golubov},
title = {Theoretical model of superconducting spintronic SIsFS devices},
journal = {Applied Physics Letters},
year = {2013},
volume = {102},
publisher = {AIP Publishing},
month = {may},
url = {https://doi.org/10.1063/1.4805032},
number = {19},
pages = {192603},
doi = {10.1063/1.4805032}
}
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Bakurskiy, S. V., et al. “Theoretical model of superconducting spintronic SIsFS devices.” Applied Physics Letters, vol. 102, no. 19, May. 2013, p. 192603. https://doi.org/10.1063/1.4805032.