Double Fe-impurity charge state in the topological insulator Bi2Se3
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi2Se3 is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, and on the overall doping level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to both the Dirac point and bulk bands have to be taken into account when considering the electron scattering on the disorder in topological insulators.
Citations by journals
1
2
|
|
Journal of Physical Chemistry Letters
|
Journal of Physical Chemistry Letters
2 publications, 28.57%
|
Communications Materials
|
Communications Materials
1 publication, 14.29%
|
ACS Nano
|
ACS Nano
1 publication, 14.29%
|
Advanced Quantum Technologies
|
Advanced Quantum Technologies
1 publication, 14.29%
|
Chinese Physics B
|
Chinese Physics B
1 publication, 14.29%
|
New Journal of Physics
|
New Journal of Physics
1 publication, 14.29%
|
1
2
|
Citations by publishers
1
2
3
|
|
American Chemical Society (ACS)
|
American Chemical Society (ACS)
3 publications, 42.86%
|
IOP Publishing
|
IOP Publishing
2 publications, 28.57%
|
Springer Nature
|
Springer Nature
1 publication, 14.29%
|
Wiley
|
Wiley
1 publication, 14.29%
|
1
2
3
|
- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.