Physical Review B, volume 100, issue 19, publication number 195127

Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

Shvets I. A. ^{1, 2}

Klimovskikh Ilya I. ¹

Klimovskikh I I ¹

Aliev Ziya S. ^{3, 4}

Aliev Z S ^{3, 4}

Babanly M. ^{5, 6}

Babanly M. B. ^{5, 6}

Zuñiga F. J. ⁷

Zúñiga F. J. ⁷

Sánchez-Barriga J. ⁸

Sánchez Barriga J ⁸

Krivenkov M ⁸

Krivenkov M. ⁸

Shikin Alexander M. ¹

SHIKIN A. M. ¹

Chulkov E.V. ^{1, 2, 9, 10}

CHULKOV E. V. ^{1, 2, 9, 10}

Hide authors affiliations Show authors affiliations: 10 affiliations

St. Petersburg State University, 198504 Saint Petersburg, Russia |

Tomsk State University, 634050 Tomsk, Russia |

Institute of Physics, ANAS, AZ1143 Baku, Azerbaijan |

⁴

Azerbaijan State Oil and Industry University, AZ1010 Baku, Azerbaijan |

⁵

Baku State University, AZ1148 Baku, Azerbaijan |

⁶

Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143 Baku, Azerbaijan |

⁷

Departamento de Física de la Materia Condensada Facultad de Ciencia y Tecnología, Universidad del País Vasco, E-48080 Bilbao, Spain |

⁸

Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin, Germany |

⁹

Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain |

¹⁰

Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain |

Publication type: Journal Article

Publication date: 2019-11-18

American Physical Society (APS)

Journal: Physical Review B

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Quartile WOS

Impact factor: 3.7

ISSN: 24699950, 24699969, 10980121, 1550235X

DOI: 10.1103/PhysRevB.100.195127

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Abstract

This work is supported by the Russian Science Foundation (Grants No. 18-12-00169 in part of the density functional calculations and No. 18-12-00062 in part of the photoemission measurements) and Saint Petersburg State University (Grant ID 40990069). The support from the Academic D.I. Mendeleev Fund Program of Tomsk State University (Project No. 8.1.01.2018), the Russian Foundation for Basic Researches (Grant No. 18-52-06009), the Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EIF/MQM/Elm-Tehsil-1-2016-1(26)-71/01/4-M33), the Basque Country Government, Departamento de Educacion, Universidades e Investigacion (Grants No. IT-756-13 and No. IT1301-19) and the Spanish Ministerio de Ciencia e Innovacion (Grant No. FIS2016-75862-P) are acknowledged. J.S.-B. gratefully acknowledges financial support from the Impuls-und Vernetzungsfonds der Helmholtz-Gemeinschaft under Grant No. HRSF-0067 (Helmholtz-Russia Joint Research Group). Calculations were partly performed using computational resources provided by Resource Center “Computer Center of SPbU” (http://cc.spbu.ru) and the SKIFCyberia sup

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Physical Review B	Physical Review B, 1, 20% Physical Review B 1 publication, 20%
Applied Sciences (Switzerland)	Applied Sciences (Switzerland), 1, 20% Applied Sciences (Switzerland) 1 publication, 20%
Physica E: Low-Dimensional Systems and Nanostructures	Physica E: Low-Dimensional Systems and Nanostructures, 1, 20% Physica E: Low-Dimensional Systems and Nanostructures 1 publication, 20%
Russian Journal of Inorganic Chemistry	Russian Journal of Inorganic Chemistry, 1, 20% Russian Journal of Inorganic Chemistry 1 publication, 20%
Phase Transitions	Phase Transitions, 1, 20% Phase Transitions 1 publication, 20%
	1

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American Physical Society (APS)	American Physical Society (APS), 1, 20% American Physical Society (APS) 1 publication, 20%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 1, 20% Multidisciplinary Digital Publishing Institute (MDPI) 1 publication, 20%
Elsevier	Elsevier, 1, 20% Elsevier 1 publication, 20%
Pleiades Publishing	Pleiades Publishing, 1, 20% Pleiades Publishing 1 publication, 20%
Taylor & Francis	Taylor & Francis, 1, 20% Taylor & Francis 1 publication, 20%
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Shvets I. A. et al. Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3 // Physical Review B. 2019. Vol. 100. No. 19. 195127

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Shvets I. A., Klimovskikh I. I., Klimovskikh I. I., Aliev Z. S., Aliev Z. S., Babanly M. B., Babanly M., Zuñiga F. J., Zúñiga F. J., Sánchez Barriga J., Sánchez-Barriga J., Krivenkov M., Krivenkov M., SHIKIN A. M., Shikin A. M., Chulkov E., CHULKOV E. V. Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3 // Physical Review B. 2019. Vol. 100. No. 19. 195127

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TY - JOUR

DO - 10.1103/PhysRevB.100.195127

UR - https://doi.org/10.1103%2FPhysRevB.100.195127

TI - Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

T2 - Physical Review B

AU - Shvets, I. A.

AU - Klimovskikh, I I

AU - Zuñiga, F. J.

AU - Krivenkov, M

AU - SHIKIN, A. M.

AU - Aliev, Z S

AU - Babanly, M. B.

AU - Sánchez Barriga, J

AU - CHULKOV, E. V.

AU - Klimovskikh, Ilya I.

AU - Aliev, Ziya S.

AU - Babanly, M.

AU - Zúñiga, F. J.

AU - Sánchez-Barriga, J.

AU - Krivenkov, M.

AU - Shikin, Alexander M.

AU - Chulkov, E.V.

PY - 2019

DA - 2019/11/18 00:00:00

PB - American Physical Society (APS)

IS - 19

VL - 100

SN - 2469-9950

SN - 2469-9969

SN - 1098-0121

SN - 1550-235X

ER -

BibTex

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@article{2019_Shvets,

author = {I. A. Shvets and I I Klimovskikh and F. J. Zuñiga and M Krivenkov and A. M. SHIKIN and Z S Aliev and M. B. Babanly and J Sánchez Barriga and E. V. CHULKOV and Ilya I. Klimovskikh and Ziya S. Aliev and M. Babanly and F. J. Zúñiga and J. Sánchez-Barriga and M. Krivenkov and Alexander M. Shikin and E.V. Chulkov},

title = {Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3},

journal = {Physical Review B},

year = {2019},

volume = {100},

publisher = {American Physical Society (APS)},

month = {nov},

url = {https://doi.org/10.1103%2FPhysRevB.100.195127},

number = {19},

doi = {10.1103/PhysRevB.100.195127}

}

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Publisher

American Physical Society (APS)

Journal

Physical Review B

Quartile SCImago

Quartile WOS

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3.7

ISSN

24699950 (Print)
24699969 (Electronic)
10980121 (Print)
1550235X (Electronic)

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