Physical Review E, volume 83, issue 2, publication number 026207
Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices
1
Centre for Applied Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland
|
2
Tyndall National Institute, Lee Maltings, Cork, Ireland
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Publication type: Journal Article
Publication date: 2011-02-24
Journal:
Physical Review E
Q1
Q1
SJR: 0.805
CiteScore: 4.5
Impact factor: 2.2
ISSN: 24700045, 24700053, 15393755, 15502376, 1063651X, 10953787
Metals and Alloys
Mechanical Engineering
Industrial and Manufacturing Engineering
Strategy and Management
Abstract
Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.
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Kelleher B. et al. Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices // Physical Review E. 2011. Vol. 83. No. 2. 026207
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Kelleher B., Bonatto C., Huyet G., Hegarty S. Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices // Physical Review E. 2011. Vol. 83. No. 2. 026207
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TY - JOUR
DO - 10.1103/physreve.83.026207
UR - https://doi.org/10.1103/physreve.83.026207
TI - Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices
T2 - Physical Review E
AU - Kelleher, B.
AU - Bonatto, C.
AU - Huyet, G.
AU - Hegarty, S.P.
PY - 2011
DA - 2011/02/24
PB - American Physical Society (APS)
IS - 2
VL - 83
SN - 2470-0045
SN - 2470-0053
SN - 1539-3755
SN - 1550-2376
SN - 1063-651X
SN - 1095-3787
ER -
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@article{2011_Kelleher,
author = {B. Kelleher and C. Bonatto and G. Huyet and S.P. Hegarty},
title = {Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices},
journal = {Physical Review E},
year = {2011},
volume = {83},
publisher = {American Physical Society (APS)},
month = {feb},
url = {https://doi.org/10.1103/physreve.83.026207},
number = {2},
doi = {10.1103/physreve.83.026207}
}