Journal of Applied Crystallography, volume 51, issue 6, pages 1616-1622
X-ray topo-tomography studies of linear dislocations in silicon single crystals
Buzmakov A. V.
1
,
Chukhovskii Felix
1
,
Dyachkova Irina
1
,
Zolotov D. A.
1
,
Danilewsky Andreas
2
,
Baumbach Tilo
3, 4
,
Bode Simon
4
,
Haaga Simon
2, 3
,
Hänschke Daniel
3
,
Kabukcuoglu Merve
2, 3
,
Balzer Matthias
5
,
Caselle Michele
5
,
Suvorov Ernest V.
6
2
Crystallography, Institute for Geo- and Environmental Sciences, Freiburg im Breisgau, Germany
|
5
Publication type: Journal Article
Publication date: 2018-11-01
Journal:
Journal of Applied Crystallography
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 6.1
ISSN: 00218898, 16005767
General Biochemistry, Genetics and Molecular Biology
Abstract
This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.
Citations by journals
|
1
2
|
|
|
Journal of Applied Crystallography
|
Journal of Applied Crystallography
2 publications, 18.18%
|
|
Acta Crystallographica Section A: Foundations and Advances
|
Acta Crystallographica Section A: Foundations and Advances
1 publication, 9.09%
|
|
Applied Nanoscience (Switzerland)
|
Applied Nanoscience (Switzerland)
1 publication, 9.09%
|
|
Crystals
|
Crystals
1 publication, 9.09%
|
|
Journal of Physics: Conference Series
|
Journal of Physics: Conference Series
1 publication, 9.09%
|
|
Crystal Research and Technology
|
Crystal Research and Technology
1 publication, 9.09%
|
|
Physics of the Solid State
|
Physics of the Solid State
1 publication, 9.09%
|
|
JETP Letters
|
JETP Letters
1 publication, 9.09%
|
|
Optoelectronics, Instrumentation and Data Processing
|
Optoelectronics, Instrumentation and Data Processing
1 publication, 9.09%
|
|
Technical Physics
|
Technical Physics
1 publication, 9.09%
|
|
1
2
|
Citations by publishers
|
1
2
3
4
|
|
|
Pleiades Publishing
|
Pleiades Publishing
4 publications, 36.36%
|
|
International Union of Crystallography (IUCr)
|
International Union of Crystallography (IUCr)
3 publications, 27.27%
|
|
Springer Nature
|
Springer Nature
1 publication, 9.09%
|
|
Multidisciplinary Digital Publishing Institute (MDPI)
|
Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 9.09%
|
|
IOP Publishing
|
IOP Publishing
1 publication, 9.09%
|
|
Wiley
|
Wiley
1 publication, 9.09%
|
|
1
2
3
4
|
- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
{"yearsCitations":{"type":"bar","data":{"show":true,"labels":[2019,2020,2021,2022,2023],"ids":[0,0,0,0,0],"codes":[0,0,0,0,0],"imageUrls":["","","","",""],"datasets":[{"label":"Citations number","data":[1,4,3,0,3],"backgroundColor":["#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6"],"percentage":["9.09","36.36","27.27",0,"27.27"],"barThickness":null}]},"options":{"indexAxis":"x","maintainAspectRatio":true,"scales":{"y":{"ticks":{"precision":0,"autoSkip":false,"font":{"family":"Montserrat"},"color":"#000000"}},"x":{"ticks":{"stepSize":1,"precision":0,"font":{"family":"Montserrat"},"color":"#000000"}}},"plugins":{"legend":{"position":"top","labels":{"font":{"family":"Montserrat"},"color":"#000000"}},"title":{"display":true,"text":"Citations per year","font":{"size":24,"family":"Montserrat","weight":600},"color":"#000000"}}}},"journals":{"type":"bar","data":{"show":true,"labels":["Journal of Applied Crystallography","Acta Crystallographica Section A: Foundations and Advances","Applied Nanoscience (Switzerland)","Crystals","Journal of Physics: Conference Series","Crystal Research and Technology","Physics of the Solid State","JETP Letters","Optoelectronics, Instrumentation and Data Processing","Technical Physics"],"ids":[11574,5806,13118,15823,3333,23307,11703,5735,10476,17167],"codes":[0,0,0,0,0,0,0,0,0,0],"imageUrls":["\/storage\/images\/resized\/xG3oC19920mmFVqkoVEGKGaMCeoalzyvWxPkVox5_medium.webp","\/storage\/images\/resized\/xG3oC19920mmFVqkoVEGKGaMCeoalzyvWxPkVox5_medium.webp","\/storage\/images\/resized\/voXLqlsvTwv5p3iMQ8Dhs95nqB4AXOG7Taj7G4ra_medium.webp","\/storage\/images\/resized\/MjH1ITP7lMYGxeqUZfkt2BnVLgjkk413jwBV97XX_medium.webp","\/storage\/images\/resized\/LsKy6OnmmmRGcAU6CZgWQvNiP1polbaSLNrN7zqj_medium.webp","\/storage\/images\/resized\/bRyGpdm98BkAUYiK1YFNpl5Z7hPu6Gd87gbIeuG3_medium.webp","\/storage\/images\/resized\/oZgeErrVFhuDksyqFURLvYS1wtVSBWczh001igGo_medium.webp","\/storage\/images\/resized\/oZgeErrVFhuDksyqFURLvYS1wtVSBWczh001igGo_medium.webp","\/storage\/images\/resized\/oZgeErrVFhuDksyqFURLvYS1wtVSBWczh001igGo_medium.webp","\/storage\/images\/resized\/oZgeErrVFhuDksyqFURLvYS1wtVSBWczh001igGo_medium.webp"],"datasets":[{"label":"","data":[2,1,1,1,1,1,1,1,1,1],"backgroundColor":["#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6"],"percentage":[18.18,9.09,9.09,9.09,9.09,9.09,9.09,9.09,9.09,9.09],"barThickness":13}]},"options":{"indexAxis":"y","maintainAspectRatio":false,"scales":{"y":{"ticks":{"precision":0,"autoSkip":false,"font":{"family":"Montserrat"},"color":"#000000"}},"x":{"ticks":{"stepSize":null,"precision":0,"font":{"family":"Montserrat"},"color":"#000000"}}},"plugins":{"legend":{"position":"top","labels":{"font":{"family":"Montserrat"},"color":"#000000"}},"title":{"display":true,"text":"Journals","font":{"size":24,"family":"Montserrat","weight":600},"color":"#000000"}}}},"publishers":{"type":"bar","data":{"show":true,"labels":["Pleiades Publishing","International Union of Crystallography (IUCr)","Springer Nature","Multidisciplinary Digital Publishing Institute (MDPI)","IOP Publishing","Wiley"],"ids":[101,730,8,202,2075,11],"codes":[0,0,0,0,0,0],"imageUrls":["\/storage\/images\/resized\/oZgeErrVFhuDksyqFURLvYS1wtVSBWczh001igGo_medium.webp","\/storage\/images\/resized\/xG3oC19920mmFVqkoVEGKGaMCeoalzyvWxPkVox5_medium.webp","\/storage\/images\/resized\/voXLqlsvTwv5p3iMQ8Dhs95nqB4AXOG7Taj7G4ra_medium.webp","\/storage\/images\/resized\/MjH1ITP7lMYGxeqUZfkt2BnVLgjkk413jwBV97XX_medium.webp","\/storage\/images\/resized\/LsKy6OnmmmRGcAU6CZgWQvNiP1polbaSLNrN7zqj_medium.webp","\/storage\/images\/resized\/bRyGpdm98BkAUYiK1YFNpl5Z7hPu6Gd87gbIeuG3_medium.webp"],"datasets":[{"label":"","data":[4,3,1,1,1,1],"backgroundColor":["#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6","#3B82F6"],"percentage":[36.36,27.27,9.09,9.09,9.09,9.09],"barThickness":13}]},"options":{"indexAxis":"y","maintainAspectRatio":false,"scales":{"y":{"ticks":{"precision":0,"autoSkip":false,"font":{"family":"Montserrat"},"color":"#000000"}},"x":{"ticks":{"stepSize":null,"precision":0,"font":{"family":"Montserrat"},"color":"#000000"}}},"plugins":{"legend":{"position":"top","labels":{"font":{"family":"Montserrat"},"color":"#000000"}},"title":{"display":true,"text":"Publishers","font":{"size":24,"family":"Montserrat","weight":600},"color":"#000000"}}}}}
Metrics
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Asadchikov V. et al. X-ray topo-tomography studies of linear dislocations in silicon single crystals // Journal of Applied Crystallography. 2018. Vol. 51. No. 6. pp. 1616-1622.
GOST all authors (up to 50)
Copy
Asadchikov V., Buzmakov A. V., Chukhovskii F., Dyachkova I., Zolotov D. A., Danilewsky A., Baumbach T., Bode S., Haaga S., Hänschke D., Kabukcuoglu M., Balzer M., Caselle M., Suvorov E. V. X-ray topo-tomography studies of linear dislocations in silicon single crystals // Journal of Applied Crystallography. 2018. Vol. 51. No. 6. pp. 1616-1622.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1107/s160057671801419x
UR - https://doi.org/10.1107%2Fs160057671801419x
TI - X-ray topo-tomography studies of linear dislocations in silicon single crystals
T2 - Journal of Applied Crystallography
AU - Asadchikov, Victor
AU - Buzmakov, A. V.
AU - Chukhovskii, Felix
AU - Dyachkova, Irina
AU - Zolotov, D. A.
AU - Danilewsky, Andreas
AU - Baumbach, Tilo
AU - Bode, Simon
AU - Haaga, Simon
AU - Hänschke, Daniel
AU - Kabukcuoglu, Merve
AU - Balzer, Matthias
AU - Caselle, Michele
AU - Suvorov, Ernest V.
PY - 2018
DA - 2018/11/01 00:00:00
PB - International Union of Crystallography (IUCr)
SP - 1616-1622
IS - 6
VL - 51
SN - 0021-8898
SN - 1600-5767
ER -
Cite this
BibTex
Copy
@article{2018_Asadchikov,
author = {Victor Asadchikov and A. V. Buzmakov and Felix Chukhovskii and Irina Dyachkova and D. A. Zolotov and Andreas Danilewsky and Tilo Baumbach and Simon Bode and Simon Haaga and Daniel Hänschke and Merve Kabukcuoglu and Matthias Balzer and Michele Caselle and Ernest V. Suvorov},
title = {X-ray topo-tomography studies of linear dislocations in silicon single crystals},
journal = {Journal of Applied Crystallography},
year = {2018},
volume = {51},
publisher = {International Union of Crystallography (IUCr)},
month = {nov},
url = {https://doi.org/10.1107%2Fs160057671801419x},
number = {6},
pages = {1616--1622},
doi = {10.1107/s160057671801419x}
}
Cite this
MLA
Copy
Asadchikov, Victor, et al. “X-ray topo-tomography studies of linear dislocations in silicon single crystals.” Journal of Applied Crystallography, vol. 51, no. 6, Nov. 2018, pp. 1616-1622. https://doi.org/10.1107%2Fs160057671801419x.
Profiles