X-ray topo-tomography studies of linear dislocations in silicon single crystals
A. V. Buzmakov
1
,
Felix Chukhovskii
1
,
Irina Dyachkova
1
,
D. A. Zolotov
1
,
Andreas Danilewsky
2
,
Tilo Baumbach
3, 4
,
Simon Bode
4
,
Simon Haaga
2, 3
,
Daniel Hänschke
3
,
Merve Kabukcuoglu
2, 3
,
Matthias Balzer
5
,
Michele Caselle
5
,
Ernest V. Suvorov
6
2
Crystallography, Institute for Geo- and Environmental Sciences, Freiburg im Breisgau, Germany
|
5
Publication type: Journal Article
Publication date: 2018-11-01
scimago Q1
wos Q1
SJR: 1.183
CiteScore: 8.5
Impact factor: 2.8
ISSN: 00218898, 16005767
General Biochemistry, Genetics and Molecular Biology
Abstract
This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.
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21
Total citations:
21
Citations from 2024:
10
(47.62%)
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GOST
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Asadchikov V. et al. X-ray topo-tomography studies of linear dislocations in silicon single crystals // Journal of Applied Crystallography. 2018. Vol. 51. No. 6. pp. 1616-1622.
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Asadchikov V., Buzmakov A. V., Chukhovskii F., Dyachkova I., Zolotov D. A., Danilewsky A., Baumbach T., Bode S., Haaga S., Hänschke D., Kabukcuoglu M., Balzer M., Caselle M., Suvorov E. V. X-ray topo-tomography studies of linear dislocations in silicon single crystals // Journal of Applied Crystallography. 2018. Vol. 51. No. 6. pp. 1616-1622.
Cite this
RIS
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TY - JOUR
DO - 10.1107/s160057671801419x
UR - https://doi.org/10.1107/s160057671801419x
TI - X-ray topo-tomography studies of linear dislocations in silicon single crystals
T2 - Journal of Applied Crystallography
AU - Asadchikov, Victor
AU - Buzmakov, A. V.
AU - Chukhovskii, Felix
AU - Dyachkova, Irina
AU - Zolotov, D. A.
AU - Danilewsky, Andreas
AU - Baumbach, Tilo
AU - Bode, Simon
AU - Haaga, Simon
AU - Hänschke, Daniel
AU - Kabukcuoglu, Merve
AU - Balzer, Matthias
AU - Caselle, Michele
AU - Suvorov, Ernest V.
PY - 2018
DA - 2018/11/01
PB - International Union of Crystallography (IUCr)
SP - 1616-1622
IS - 6
VL - 51
SN - 0021-8898
SN - 1600-5767
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2018_Asadchikov,
author = {Victor Asadchikov and A. V. Buzmakov and Felix Chukhovskii and Irina Dyachkova and D. A. Zolotov and Andreas Danilewsky and Tilo Baumbach and Simon Bode and Simon Haaga and Daniel Hänschke and Merve Kabukcuoglu and Matthias Balzer and Michele Caselle and Ernest V. Suvorov},
title = {X-ray topo-tomography studies of linear dislocations in silicon single crystals},
journal = {Journal of Applied Crystallography},
year = {2018},
volume = {51},
publisher = {International Union of Crystallography (IUCr)},
month = {nov},
url = {https://doi.org/10.1107/s160057671801419x},
number = {6},
pages = {1616--1622},
doi = {10.1107/s160057671801419x}
}
Cite this
MLA
Copy
Asadchikov, Victor, et al. “X-ray topo-tomography studies of linear dislocations in silicon single crystals.” Journal of Applied Crystallography, vol. 51, no. 6, Nov. 2018, pp. 1616-1622. https://doi.org/10.1107/s160057671801419x.
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