Institute of Electrical and Electronics Engineers (IEEE)

Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

Mikhail Basov ¹

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Dukhov Automatics Research Institute, Moscow, Russian Federation |

Publication type: Proceedings Article

Publication date: 2021-10-31

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/SENSORS47087.2021.9639504

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Abstract

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

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2 citations

Basov Mikhail

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PhD in Engineering

13 publications, 281 citations, 427 reviews

h-index: 10

Dukhov Research Institute of Automatics

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Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Labs

Development and research of microelectromechanical systems and semiconductor sensors

Profiles

Mikhail Viktorovich Basov