Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

Publication typeProceedings Article
Publication date2021-10-31
Abstract
High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

Citations by journals

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IEEE Sensors Journal
IEEE Sensors Journal, 5, 62.5%
IEEE Sensors Journal
5 publications, 62.5%
Measurement Science and Technology
Measurement Science and Technology, 2, 25%
Measurement Science and Technology
2 publications, 25%
Nanotechnology
Nanotechnology, 1, 12.5%
Nanotechnology
1 publication, 12.5%
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Citations by publishers

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IEEE
IEEE, 5, 62.5%
IEEE
5 publications, 62.5%
IOP Publishing
IOP Publishing, 3, 37.5%
IOP Publishing
3 publications, 37.5%
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