IEEE Sensors Journal, volume 21, issue 4, pages 4357-4364
Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa
Publication type: Journal Article
Publication date: 2021-02-15
Electrical and Electronic Engineering
Instrumentation
Abstract
The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S =44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.
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Citations by publishers
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IEEE
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6 publications, 33.33%
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IOP Publishing
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5 publications, 27.78%
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3 publications, 16.67%
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Elsevier
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1 publication, 5.56%
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Wiley
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Wiley
1 publication, 5.56%
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Springer Nature
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Springer Nature
1 publication, 5.56%
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Basov M. Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa // IEEE Sensors Journal. 2021. Vol. 21. No. 4. pp. 4357-4364.
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Basov M. Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa // IEEE Sensors Journal. 2021. Vol. 21. No. 4. pp. 4357-4364.
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TY - JOUR
DO - 10.1109/jsen.2020.3033813
UR - https://doi.org/10.1109%2Fjsen.2020.3033813
TI - Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa
T2 - IEEE Sensors Journal
AU - Basov, Mikhail
PY - 2021
DA - 2021/02/15 00:00:00
PB - IEEE
SP - 4357-4364
IS - 4
VL - 21
SN - 1530-437X
ER -
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@article{2021_Basov,
author = {Mikhail Basov},
title = {Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa},
journal = {IEEE Sensors Journal},
year = {2021},
volume = {21},
publisher = {IEEE},
month = {feb},
url = {https://doi.org/10.1109%2Fjsen.2020.3033813},
number = {4},
pages = {4357--4364},
doi = {10.1109/jsen.2020.3033813}
}
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Basov, Mikhail. “Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa.” IEEE Sensors Journal, vol. 21, no. 4, Feb. 2021, pp. 4357-4364. https://doi.org/10.1109%2Fjsen.2020.3033813.
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