Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process
Publication type: Journal Article
Publication date: 2022-01-01
scimago Q3
wos Q3
SJR: 0.393
CiteScore: 4.4
Impact factor: 2.2
ISSN: 21628769, 21628777
Electronic, Optical and Magnetic Materials
Abstract
A silicon oxyfluoride layer was deposited on a-Si samples using SiF4/O2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. The sample was then brought back to room temperature and analyzed again. It has been shown that a temperature below −65 °C is needed to significantly enhance the physisorption of SiFx species. Hence, in this condition, a F-rich oxyfluoride layer, stable at low temperature only, is physisorbed. Above this threshold temperature, the native silicon oxide layer is fluorinated and the proportion of O in the deposited layer is higher and remains stable even when the sample is brought back to room temperature.
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13
Total citations:
13
Citations from 2024:
11
(84.62%)
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GOST
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Antoun G. et al. Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process // ECS Journal of Solid State Science and Technology. 2022. Vol. 11. No. 1. p. 13013.
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Antoun G., Girard A., Tillocher T., Lefaucheux P., Faguet J., Maekawa K., Cardinaud C., Dussart R. Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process // ECS Journal of Solid State Science and Technology. 2022. Vol. 11. No. 1. p. 13013.
Cite this
RIS
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TY - JOUR
DO - 10.1149/2162-8777/ac4c7d
UR - https://doi.org/10.1149/2162-8777/ac4c7d
TI - Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process
T2 - ECS Journal of Solid State Science and Technology
AU - Antoun, G.
AU - Girard, A.
AU - Tillocher, T.
AU - Lefaucheux, P.
AU - Faguet, J.
AU - Maekawa, K.
AU - Cardinaud, C.
AU - Dussart, R.
PY - 2022
DA - 2022/01/01
PB - The Electrochemical Society
SP - 13013
IS - 1
VL - 11
SN - 2162-8769
SN - 2162-8777
ER -
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BibTex (up to 50 authors)
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@article{2022_Antoun,
author = {G. Antoun and A. Girard and T. Tillocher and P. Lefaucheux and J. Faguet and K. Maekawa and C. Cardinaud and R. Dussart},
title = {Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process},
journal = {ECS Journal of Solid State Science and Technology},
year = {2022},
volume = {11},
publisher = {The Electrochemical Society},
month = {jan},
url = {https://doi.org/10.1149/2162-8777/ac4c7d},
number = {1},
pages = {13013},
doi = {10.1149/2162-8777/ac4c7d}
}
Cite this
MLA
Copy
Antoun, G., et al. “Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process.” ECS Journal of Solid State Science and Technology, vol. 11, no. 1, Jan. 2022, p. 13013. https://doi.org/10.1149/2162-8777/ac4c7d.