Open Access
Nanoscale Research Letters, volume 11, issue 1, publication number 147
Crossbar Nanoscale HfO2-Based Electronic Synapses
Publication type: Journal Article
Publication date: 2016-03-15
Journal:
Nanoscale Research Letters
Quartile SCImago
Q1
Quartile WOS
—
Impact factor: —
ISSN: 19317573, 1556276X
PubMed ID:
26979725
Condensed Matter Physics
General Materials Science
Abstract
Crossbar resistive switching devices down to 40 × 40 nm2 in size comprising 3-nm-thick HfO2 layers are forming-free and exhibit up to 105 switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression properties akin to biological synapses. Both forming-free and gradual switching properties are modeled in terms of oxygen vacancy generation in an ultrathin HfO2 layer. By applying the voltage pulses to the opposite electrodes of nanodevices with the shape emulating spikes in biological neurons, spike-timing-dependent plasticity functionality is demonstrated. Thus, the fabricated memristors in crossbar geometry are promising candidates for hardware implementation of hybrid CMOS-neuron/memristor-synapse neural networks.
Citations by journals
Citations by publishers
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Wiley
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Wiley
6 publications, 14.63%
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Elsevier
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Elsevier
5 publications, 12.2%
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American Institute of Physics (AIP)
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American Institute of Physics (AIP)
3 publications, 7.32%
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Multidisciplinary Digital Publishing Institute (MDPI)
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Multidisciplinary Digital Publishing Institute (MDPI)
3 publications, 7.32%
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Royal Society of Chemistry (RSC)
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Royal Society of Chemistry (RSC)
3 publications, 7.32%
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Tyumen State University
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Tyumen State University
3 publications, 7.32%
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Frontiers Media S.A.
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Frontiers Media S.A.
2 publications, 4.88%
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Springer Nature
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Springer Nature
2 publications, 4.88%
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IOP Publishing
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IOP Publishing
2 publications, 4.88%
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Pleiades Publishing
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Pleiades Publishing
2 publications, 4.88%
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IEEE
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IEEE
2 publications, 4.88%
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American Chemical Society (ACS)
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American Chemical Society (ACS)
1 publication, 2.44%
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Matveyev Y. et al. Crossbar Nanoscale HfO2-Based Electronic Synapses // Nanoscale Research Letters. 2016. Vol. 11. No. 1. 147
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Matveyev Y., Kirtaev R., Fetisova A., Zakharchenko S., Negrov D., Zenkevich A. Crossbar Nanoscale HfO2-Based Electronic Synapses // Nanoscale Research Letters. 2016. Vol. 11. No. 1. 147
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TY - JOUR
DO - 10.1186/s11671-016-1360-6
UR - https://doi.org/10.1186%2Fs11671-016-1360-6
TI - Crossbar Nanoscale HfO2-Based Electronic Synapses
T2 - Nanoscale Research Letters
AU - Matveyev, Y.
AU - Kirtaev, Roman
AU - Fetisova, Alena
AU - Zakharchenko, Sergey
AU - Negrov, Dmitry
AU - Zenkevich, Andrey
PY - 2016
DA - 2016/03/15 00:00:00
PB - Springer Nature
IS - 1
VL - 11
PMID - 26979725
SN - 1931-7573
SN - 1556-276X
ER -
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@article{2016_Matveyev,
author = {Y. Matveyev and Roman Kirtaev and Alena Fetisova and Sergey Zakharchenko and Dmitry Negrov and Andrey Zenkevich},
title = {Crossbar Nanoscale HfO2-Based Electronic Synapses},
journal = {Nanoscale Research Letters},
year = {2016},
volume = {11},
publisher = {Springer Nature},
month = {mar},
url = {https://doi.org/10.1186%2Fs11671-016-1360-6},
number = {1},
doi = {10.1186/s11671-016-1360-6}
}
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