Progress and future directions for atomic layer deposition and ALD-based chemistry
Publication type: Journal Article
Publication date: 2011-11-18
scimago Q1
wos Q2
SJR: 1.386
CiteScore: 8.3
Impact factor: 4.9
ISSN: 08837694, 19381425
Physical and Theoretical Chemistry
Condensed Matter Physics
General Materials Science
Abstract
This article reviews and assesses recent progress in atomic layer deposition (ALD) and highlights how the field of ALD is expanding into new applications and inspiring new vapor-based chemical reaction methods. ALD is a unique chemical process that yields ultra-thin film coatings with exceptional conformality on highly non-uniform and non-planar surfaces, often with subnanometer scale control of the coating thickness. While industry uses ALD for high-κ dielectrics in the manufacturing of electronic devices, there is growing interest in low-temperature ALD and ALD-inspired processes for newer and more wide-ranging applications, including integration with biological and synthetic polymer structures. Moreover, the conformality and nanoscale control of ALD film thickness makes ALD ideal for encapsulation and nano-architectural engineering. Articles in this issue of MRS Bulletin present details of several growing interest areas, including the extension of ALD to new regions of the periodic table, and molecular layer deposition and vapor infiltration for synthesis of organic-based thin films. Articles also discuss ALD for nanostructure engineering and ALD for energy applications. A final article shows how the challenge of scaling ALD for high rate nanomanufacturing will push advances in plasma, roll-to-roll, and atmospheric pressure ALD.
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Metrics
188
Total citations:
188
Citations from 2024:
20
(10.64%)
The most citing journal
Citations in journal:
12
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Parsons G. N., George S. M., Knez M. Progress and future directions for atomic layer deposition and ALD-based chemistry // MRS Bulletin. 2011. Vol. 36. No. 11. pp. 865-871.
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Parsons G. N., George S. M., Knez M. Progress and future directions for atomic layer deposition and ALD-based chemistry // MRS Bulletin. 2011. Vol. 36. No. 11. pp. 865-871.
Cite this
RIS
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TY - JOUR
DO - 10.1557/mrs.2011.238
UR - https://doi.org/10.1557/mrs.2011.238
TI - Progress and future directions for atomic layer deposition and ALD-based chemistry
T2 - MRS Bulletin
AU - Parsons, Gregory N.
AU - George, Steven. M
AU - Knez, Mato
PY - 2011
DA - 2011/11/18
PB - Cambridge University Press
SP - 865-871
IS - 11
VL - 36
SN - 0883-7694
SN - 1938-1425
ER -
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BibTex (up to 50 authors)
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@article{2011_Parsons,
author = {Gregory N. Parsons and Steven. M George and Mato Knez},
title = {Progress and future directions for atomic layer deposition and ALD-based chemistry},
journal = {MRS Bulletin},
year = {2011},
volume = {36},
publisher = {Cambridge University Press},
month = {nov},
url = {https://doi.org/10.1557/mrs.2011.238},
number = {11},
pages = {865--871},
doi = {10.1557/mrs.2011.238}
}
Cite this
MLA
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Parsons, Gregory N., et al. “Progress and future directions for atomic layer deposition and ALD-based chemistry.” MRS Bulletin, vol. 36, no. 11, Nov. 2011, pp. 865-871. https://doi.org/10.1557/mrs.2011.238.