Moscow Institute of Physics and Technology
Moscow Institute of Physics and Technology

Laboratory of Atomic Layer Deposition and Physics of Nanoelectronic Structures

Microelectronics Solid State Physics Nanoelectronics
Head of Laboratory

Markeev, Andrey Mihaylovich

DSc in Engineering
Publications
108
Citations
2 723
h-index
28
CoLab ID
R-3D1D6-0BBAA-XK86X
ORCID
0000-0001-6777-5706
ResearcherID
GZL-7565-2022
Scopus ID
7005131291
Authorization required.
Lab website

- Two-dimensional semiconductors based on transition metal dichalcogendes (TMDC), logics and memory transistors based on TMDC; - Multicomponent high-k oxides aimed on gate CMOS dielectrics or on MIM-capacitors applications; - ALD doping for stabilization of oxide metastable phases with novel properties ( e.g. HfO2 based ferroelectrics for FeRAM); - In situ control of oxygen vacancies concentration in ALD oxides for resistive-switched memory and neuromorphic devices);

  1. Atomic Force Microscopy (AFM)
  2. Transmission Electron Microscopy (TEM)
  3. X-ray diffraction
  4. X-ray photoelectron spectroscopy
  5. Electrophysical measurements
  6. Raman spectroscopy)
Andrey Markeev 🥼
Head of Laboratory
Chernikova, Anna G
Anna Chernikova
Senior Researcher
Romanov, Roman Ivanovich
Roman Romanov
Senior Researcher

Research directions

- Two-dimensional semiconductors based on transition metal dichalcogendes (TMDC), logics and memory transistors based on TMDC

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- research and development of growth processes of two-dimensional transition metal chalcogenides (MoS2, WS2); - study of a complex of problems in the creation of 2D MDP transistors: ensuring a low equivalent thickness (EOT) and low density of the surface states of the gate dielectric, ensuring optimal threshold voltage (gate metal output operation \ dipole variation at the gate stack interfaces, ensuring a low Schottky barrier for ohmic source/drain contacts

Publications and patents

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Partners

Seoul National University

Lab address

Россия, Московская область, Долгопрудный, Институтский пер., д. 9
Authorization required.