Laboratory of Atomic Layer Deposition and Physics of Nanoelectronic Structures
Publications
109
Citations
2 990
h-index
29
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- Two-dimensional semiconductors based on transition metal dichalcogendes (TMDC), logics and memory transistors based on TMDC; - Multicomponent high-k oxides aimed on gate CMOS dielectrics or on MIM-capacitors applications; - ALD doping for stabilization of oxide metastable phases with novel properties ( e.g. HfO2 based ferroelectrics for FeRAM); - In situ control of oxygen vacancies concentration in ALD oxides for resistive-switched memory and neuromorphic devices);
- Atomic Force Microscopy (AFM)
- Transmission Electron Microscopy (TEM)
- X-ray diffraction
- X-ray photoelectron spectroscopy
- Electrophysical measurements
- Raman spectroscopy)
Research directions
- Two-dimensional semiconductors based on transition metal dichalcogendes (TMDC), logics and memory transistors based on TMDC
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- research and development of growth processes of two-dimensional transition metal chalcogenides (MoS2, WS2);
- study of a complex of problems in the creation of 2D MDP transistors: ensuring a low equivalent thickness (EOT) and low density of the surface states of the gate dielectric, ensuring optimal threshold voltage (gate metal output operation \ dipole variation at the gate stack interfaces, ensuring a low Schottky barrier for ohmic source/drain contacts
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Lab address
Россия, Московская область, Долгопрудный, Институтский пер., д. 9
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