	1 2
Applied Surface Science	Applied Surface Science, 2, 8.7% Applied Surface Science 2 publications, 8.7%
ACS Applied Electronic Materials	ACS Applied Electronic Materials, 2, 8.7% ACS Applied Electronic Materials 2 publications, 8.7%
Nanomaterials	Nanomaterials, 1, 4.35% Nanomaterials 1 publication, 4.35%
ACS Sustainable Chemistry and Engineering	ACS Sustainable Chemistry and Engineering, 1, 4.35% ACS Sustainable Chemistry and Engineering 1 publication, 4.35%
Materials	Materials, 1, 4.35% Materials 1 publication, 4.35%
Coatings	Coatings, 1, 4.35% Coatings 1 publication, 4.35%
Plasma Processes and Polymers	Plasma Processes and Polymers, 1, 4.35% Plasma Processes and Polymers 1 publication, 4.35%
Journal of Physical Chemistry Letters	Journal of Physical Chemistry Letters, 1, 4.35% Journal of Physical Chemistry Letters 1 publication, 4.35%
Small Methods	Small Methods, 1, 4.35% Small Methods 1 publication, 4.35%
Journal of Vacuum Science and Technology B	Journal of Vacuum Science and Technology B, 1, 4.35% Journal of Vacuum Science and Technology B 1 publication, 4.35%
Nanoscale	Nanoscale, 1, 4.35% Nanoscale 1 publication, 4.35%
Journal of the Korean Physical Society	Journal of the Korean Physical Society, 1, 4.35% Journal of the Korean Physical Society 1 publication, 4.35%
Journal of Manufacturing and Materials Processing	Journal of Manufacturing and Materials Processing, 1, 4.35% Journal of Manufacturing and Materials Processing 1 publication, 4.35%
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1, 4.35% Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 1 publication, 4.35%
IEEE Transactions on Semiconductor Manufacturing	IEEE Transactions on Semiconductor Manufacturing, 1, 4.35% IEEE Transactions on Semiconductor Manufacturing 1 publication, 4.35%
International Journal of Thermophysics	International Journal of Thermophysics, 1, 4.35% International Journal of Thermophysics 1 publication, 4.35%
Materials and Design	Materials and Design, 1, 4.35% Materials and Design 1 publication, 4.35%
International Journal of Precision Engineering and Manufacturing - Green Technology	International Journal of Precision Engineering and Manufacturing - Green Technology, 1, 4.35% International Journal of Precision Engineering and Manufacturing - Green Technology 1 publication, 4.35%
Scientific Reports	Scientific Reports, 1, 4.35% Scientific Reports 1 publication, 4.35%
	1 2

Publishers

	1 2 3 4 5
MDPI	MDPI, 5, 21.74% MDPI 5 publications, 21.74%
American Chemical Society (ACS)	American Chemical Society (ACS), 4, 17.39% American Chemical Society (ACS) 4 publications, 17.39%
Springer Nature	Springer Nature, 4, 17.39% Springer Nature 4 publications, 17.39%
Elsevier	Elsevier, 3, 13.04% Elsevier 3 publications, 13.04%
Wiley	Wiley, 2, 8.7% Wiley 2 publications, 8.7%
American Vacuum Society	American Vacuum Society, 2, 8.7% American Vacuum Society 2 publications, 8.7%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 1, 4.35% Royal Society of Chemistry (RSC) 1 publication, 4.35%
SPIE-Intl Soc Optical Eng	SPIE-Intl Soc Optical Eng, 1, 4.35% SPIE-Intl Soc Optical Eng 1 publication, 4.35%
Institute of Electrical and Electronics Engineers (IEEE)	Institute of Electrical and Electronics Engineers (IEEE), 1, 4.35% Institute of Electrical and Electronics Engineers (IEEE) 1 publication, 4.35%
	1 2 3 4 5

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Cite this

GOST |

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GOST Copy

Kim Y. et al. Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2 and Si3N4 Films // ACS Sustainable Chemistry and Engineering. 2022. Vol. 10. No. 32. pp. 10537-10546.

GOST all authors (up to 50) Copy

Kim Y., Kim S., Kang H., You S., Kim C., Chae H. Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2 and Si3N4 Films // ACS Sustainable Chemistry and Engineering. 2022. Vol. 10. No. 32. pp. 10537-10546.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1021/acssuschemeng.2c01705

UR - https://doi.org/10.1021/acssuschemeng.2c01705

TI - Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2 and Si3N4 Films

T2 - ACS Sustainable Chemistry and Engineering

AU - Kim, Yongjae

AU - Kim, Seoeun

AU - Kang, Hojin

AU - You, Sanghyun

AU - Kim, Changkoo

AU - Chae, Heeyeop

PY - 2022

DA - 2022/08/02

PB - American Chemical Society (ACS)

SP - 10537-10546

IS - 32

VL - 10

SN - 2168-0485

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2022_Kim,

author = {Yongjae Kim and Seoeun Kim and Hojin Kang and Sanghyun You and Changkoo Kim and Heeyeop Chae},

title = {Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2 and Si3N4 Films},

journal = {ACS Sustainable Chemistry and Engineering},

year = {2022},

volume = {10},

publisher = {American Chemical Society (ACS)},

month = {aug},

url = {https://doi.org/10.1021/acssuschemeng.2c01705},

number = {32},

pages = {10537--10546},

doi = {10.1021/acssuschemeng.2c01705}

}

MLA

Cite this

MLA Copy

Kim, Yongjae, et al. “Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2 and Si3N4 Films.” ACS Sustainable Chemistry and Engineering, vol. 10, no. 32, Aug. 2022, pp. 10537-10546. https://doi.org/10.1021/acssuschemeng.2c01705.

Publisher

American Chemical Society (ACS)

Journal

ACS Sustainable Chemistry and Engineering

scimago Q1

wos Q1

SJR

1.623

CiteScore

12.5

Impact factor

7.3

ISSN

21680485 (Print, Electronic)