ACS Nano, volume 7, issue 6, pages 5181-5191

Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water

Scholz Markus R 2
Tamm Marina E. 1
Bauer Günther 5
Knop-Gericke Axel 6
2
 
Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin, Germany
5
 
Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, Altenbergerstrasse 69, 4040 Linz, Austria
6
 
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
Publication typeJournal Article
Publication date2013-05-30
Journal: ACS Nano
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor17.1
ISSN19360851, 1936086X
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
The long-term stability of functional properties of topological insulator materials is crucial for the operation of future topological insulator based devices. Water and oxygen have been reported to be the main sources of surface deterioration by chemical reactions. In the present work, we investigate the behavior of the topological surface states on Bi2X3 (X = Se, Te) by valence-band and core level photoemission in a wide range of water and oxygen pressures both in situ (from 10–8 to 0.1 mbar) and ex situ (at 1 bar). We find that no chemical reactions occur in pure oxygen and in pure water. Water itself does not chemically react with both Bi2Se3 and Bi2Te3 surfaces and only leads to slight p-doping. In dry air, the oxidation of the Bi2Te3 surface occurs on the time scale of months, in the case of Bi2Se3 surface of cleaved crystal, not even on the time scale of years. The presence of water, however, promotes the oxidation in air, and we suggest the underlying reactions supported by density functional calculations. All in all, the surface reactivity is found to be negligible, which allows expanding the acceptable ranges of conditions for preparation, handling and operation of future Bi2X3-based devices.

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Yashina L. V. et al. Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water // ACS Nano. 2013. Vol. 7. No. 6. pp. 5181-5191.
GOST all authors (up to 50) Copy
Yashina L. V., Sánchez-Barriga J., Scholz M. R., Volykhov A. A., Sirotina A. P., Neudachina V. S., Tamm M. E., Varykhalov A., Marchenko D., Springholz G., Bauer G., Knop-Gericke A., Rader O. Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water // ACS Nano. 2013. Vol. 7. No. 6. pp. 5181-5191.
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TY - JOUR
DO - 10.1021/nn400908b
UR - https://doi.org/10.1021%2Fnn400908b
TI - Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water
T2 - ACS Nano
AU - Scholz, Markus R
AU - Neudachina, Vera S.
AU - Tamm, Marina E.
AU - Bauer, Günther
AU - Knop-Gericke, Axel
AU - Yashina, Lada V.
AU - Sánchez-Barriga, J.
AU - Volykhov, Andrey A.
AU - Sirotina, Anna P.
AU - Varykhalov, Andrei
AU - Marchenko, Dmitry
AU - Springholz, G.
AU - Rader, O.
PY - 2013
DA - 2013/05/30 00:00:00
PB - American Chemical Society (ACS)
SP - 5181-5191
IS - 6
VL - 7
SN - 1936-0851
SN - 1936-086X
ER -
BibTex |
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BibTex Copy
@article{2013_Yashina
author = {Markus R Scholz and Vera S. Neudachina and Marina E. Tamm and Günther Bauer and Axel Knop-Gericke and Lada V. Yashina and J. Sánchez-Barriga and Andrey A. Volykhov and Anna P. Sirotina and Andrei Varykhalov and Dmitry Marchenko and G. Springholz and O. Rader},
title = {Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water},
journal = {ACS Nano},
year = {2013},
volume = {7},
publisher = {American Chemical Society (ACS)},
month = {may},
url = {https://doi.org/10.1021%2Fnn400908b},
number = {6},
pages = {5181--5191},
doi = {10.1021/nn400908b}
}
MLA
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MLA Copy
Yashina, Lada V., et al. “Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water.” ACS Nano, vol. 7, no. 6, May. 2013, pp. 5181-5191. https://doi.org/10.1021%2Fnn400908b.
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