Journal of Applied Physics, volume 117, issue 4, pages 44901

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO₂/TiN devices

Matveyev Y. ^{1, 2}

Egorov K. ¹

Markeev A. ¹

Zenkevich A ^{1, 2}

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Moscow Institute of Physics and Technology 1 , 141700 Moscow Region, Russia |

NRNU “Moscow Engineering Physics Institute” 2 , 115409 Moscow, Russia |

Publication type: Journal Article

Publication date: 2015-01-26

American Institute of Physics (AIP)

Journal: Journal of Applied Physics

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Quartile WOS

Impact factor: 3.2

ISSN: 00218979, 10897550

DOI: 10.1063/1.4905792

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General Physics and Astronomy

Abstract

Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO2/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO2 in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO2. The memristive properties of ALD grown TiN/HfO2/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

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Citations by journals

	1 2 3 4
Applied Physics Letters	Applied Physics Letters, 4, 5.26% Applied Physics Letters 4 publications, 5.26%
Journal of Applied Physics	Journal of Applied Physics, 4, 5.26% Journal of Applied Physics 4 publications, 5.26%
Microelectronic Engineering	Microelectronic Engineering, 3, 3.95% Microelectronic Engineering 3 publications, 3.95%
Journal of Alloys and Compounds	Journal of Alloys and Compounds, 3, 3.95% Journal of Alloys and Compounds 3 publications, 3.95%
Journal Physics D: Applied Physics	Journal Physics D: Applied Physics, 2, 2.63% Journal Physics D: Applied Physics 2 publications, 2.63%
Applied Surface Science	Applied Surface Science, 2, 2.63% Applied Surface Science 2 publications, 2.63%
Materials Science in Semiconductor Processing	Materials Science in Semiconductor Processing, 2, 2.63% Materials Science in Semiconductor Processing 2 publications, 2.63%
Advanced Functional Materials	Advanced Functional Materials, 2, 2.63% Advanced Functional Materials 2 publications, 2.63%
Advanced Electronic Materials	Advanced Electronic Materials, 2, 2.63% Advanced Electronic Materials 2 publications, 2.63%
ACS applied materials & interfaces	ACS applied materials & interfaces, 2, 2.63% ACS applied materials & interfaces 2 publications, 2.63%
Journal of Materials Chemistry C	Journal of Materials Chemistry C, 2, 2.63% Journal of Materials Chemistry C 2 publications, 2.63%
Russian Microelectronics	Russian Microelectronics, 2, 2.63% Russian Microelectronics 2 publications, 2.63%
Nanobiotechnology Reports	Nanobiotechnology Reports, 2, 2.63% Nanobiotechnology Reports 2 publications, 2.63%
AIP Advances	AIP Advances, 1, 1.32% AIP Advances 1 publication, 1.32%
Electronics (Switzerland)	Electronics (Switzerland), 1, 1.32% Electronics (Switzerland) 1 publication, 1.32%
Materials	Materials, 1, 1.32% Materials 1 publication, 1.32%
Micromachines	Micromachines, 1, 1.32% Micromachines 1 publication, 1.32%
Sensors	Sensors, 1, 1.32% Sensors 1 publication, 1.32%
Metals	Metals, 1, 1.32% Metals 1 publication, 1.32%
Frontiers in Neuroscience	Frontiers in Neuroscience, 1, 1.32% Frontiers in Neuroscience 1 publication, 1.32%
Nanoscale Research Letters	Nanoscale Research Letters, 1, 1.32% Nanoscale Research Letters 1 publication, 1.32%
Applied Physics A: Materials Science and Processing	Applied Physics A: Materials Science and Processing, 1, 1.32% Applied Physics A: Materials Science and Processing 1 publication, 1.32%
Science China Materials	Science China Materials, 1, 1.32% Science China Materials 1 publication, 1.32%
Materials Today Physics	Materials Today Physics, 1, 1.32% Materials Today Physics 1 publication, 1.32%
Nanotechnology	Nanotechnology, 1, 1.32% Nanotechnology 1 publication, 1.32%
Chinese Physics B	Chinese Physics B, 1, 1.32% Chinese Physics B 1 publication, 1.32%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1, 1.32% Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 1 publication, 1.32%
Neuromorphic Computing and Engineering	Neuromorphic Computing and Engineering, 1, 1.32% Neuromorphic Computing and Engineering 1 publication, 1.32%
Solid-State Electronics	Solid-State Electronics, 1, 1.32% Solid-State Electronics 1 publication, 1.32%

	1 2 3 4

Citations by publishers

	2 4 6 8 10 12 14 16
Elsevier	Elsevier, 15, 19.74% Elsevier 15 publications, 19.74%
American Institute of Physics (AIP)	American Institute of Physics (AIP), 10, 13.16% American Institute of Physics (AIP) 10 publications, 13.16%
Wiley	Wiley, 7, 9.21% Wiley 7 publications, 9.21%
Pleiades Publishing	Pleiades Publishing, 7, 9.21% Pleiades Publishing 7 publications, 9.21%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 5, 6.58% Multidisciplinary Digital Publishing Institute (MDPI) 5 publications, 6.58%
IOP Publishing	IOP Publishing, 5, 6.58% IOP Publishing 5 publications, 6.58%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 5, 6.58% Royal Society of Chemistry (RSC) 5 publications, 6.58%
American Chemical Society (ACS)	American Chemical Society (ACS), 4, 5.26% American Chemical Society (ACS) 4 publications, 5.26%
Springer Nature	Springer Nature, 3, 3.95% Springer Nature 3 publications, 3.95%
IEEE	IEEE, 2, 2.63% IEEE 2 publications, 2.63%
Frontiers Media S.A.	Frontiers Media S.A., 1, 1.32% Frontiers Media S.A. 1 publication, 1.32%
Japan Society of Applied Physics	Japan Society of Applied Physics, 1, 1.32% Japan Society of Applied Physics 1 publication, 1.32%
Taylor & Francis	Taylor & Francis, 1, 1.32% Taylor & Francis 1 publication, 1.32%
Tyumen State University	Tyumen State University, 1, 1.32% Tyumen State University 1 publication, 1.32%
	2 4 6 8 10 12 14 16

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Matveyev Y. et al. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices // Journal of Applied Physics. 2015. Vol. 117. No. 4. p. 44901.

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Matveyev Y., Egorov K., Markeev A., Zenkevich A. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices // Journal of Applied Physics. 2015. Vol. 117. No. 4. p. 44901.

RIS |

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TY - JOUR

DO - 10.1063/1.4905792

UR - https://doi.org/10.1063%2F1.4905792

TI - Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

T2 - Journal of Applied Physics

AU - Matveyev, Y.

AU - Egorov, K.

AU - Markeev, A.

AU - Zenkevich, A

PY - 2015

DA - 2015/01/26 00:00:00

PB - American Institute of Physics (AIP)

SP - 44901

IS - 4

VL - 117

SN - 0021-8979

SN - 1089-7550

ER -

BibTex |

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BibTex Copy

@article{2015_Matveyev,

author = {Y. Matveyev and K. Egorov and A. Markeev and A Zenkevich},

title = {Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices},

journal = {Journal of Applied Physics},

year = {2015},

volume = {117},

publisher = {American Institute of Physics (AIP)},

month = {jan},

url = {https://doi.org/10.1063%2F1.4905792},

number = {4},

pages = {44901},

doi = {10.1063/1.4905792}

}

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Matveyev, Y., et al. “Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices.” Journal of Applied Physics, vol. 117, no. 4, Jan. 2015, p. 44901. https://doi.org/10.1063%2F1.4905792.

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Publisher

American Institute of Physics (AIP)

Journal

Journal of Applied Physics

Quartile SCImago

Quartile WOS

Impact factor

3.2

ISSN

00218979 (Print)
10897550 (Electronic)

Labs

Laboratory of Functional Materials and Devices for Nanoelectronics

Profiles

Zenkevich, Andrei Vladimirovich