Applied Physics Letters, volume 109, issue 19, pages 192903

Fully ALD-grown TiN/Hf_0.5Zr_0.5O₂/TiN stacks: Ferroelectric and structural properties

Zarubin S ¹

Suvorova Elena ^{1, 2}

Spiridonov Maksim ¹

Negrov Dmitrii ¹

Chernikova Anna ¹

Markeev Andrey M. ¹

Zenkevich A. ^{1, 3}

Hide authors affiliations Show authors affiliations: 3 affiliations

Moscow Institute of Physics and Technology 1 , Dolgoprudny, Moscow Region 141700, Russia |

A.V. Shubnikov Institute of Crystallography of Russian Academy of Sciences 2 , Moscow 119333, Russia |

NRNU “Moscow Engineering Physics Institute,” 3 Moscow 115409, Russia |

Publication type: Journal Article

Publication date: 2016-11-07

American Institute of Physics (AIP)

Journal: Applied Physics Letters

Quartile SCImago

Quartile WOS

Impact factor: 4

ISSN: 00036951, 10773118

DOI: 10.1063/1.4966219

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Physics and Astronomy (miscellaneous)

Abstract

Since the discovery of ferroelectricity (FE) in HfO2-based thin films, they are gaining increasing attention as a viable alternative to conventional FE in the next generation of non-volatile memory devices. In order to further increase the density of elements in the integrated circuits, it is essential to adopt a three-dimensional design. Since atomic layer deposition (ALD) processes are extremely conformal, ALD is the favored approach in the production of 3D ferroelectric random access memory. Here, we report the fabrication of fully ALD-grown capacitors comprising a 10-nm-thick FE Hf0.5Zr0.5O2 layer sandwiched between TiN electrodes, which are subjected to a detailed investigation of the structural and functional properties. The robust FE properties of Hf0.5Zr0.5O2 films in capacitors are established by several alternative techniques. We demonstrate a good scalability of TiN/Hf0.5Zr0.5O2/TiN FE capacitors down to 100-nm size and the polarization retention in the test “one transistor-one capacitor” (1T-1C) cells after 1010 writing cycles. The presence of a non-centrosymmetric orthorhombic phase responsible for FE properties in the alloyed polycrystalline Hf0.5Zr0.5O2 films is established by transmission electron microscopy. Given the ability of the ALD technique to grow highly conformal films and multilayered structures, the obtained results indicate the route for the design of FE non-volatile memory devices in 3D integrated circuits.

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Citations by journals

	1 2 3 4 5 6 7 8 9
Applied Physics Letters	Applied Physics Letters, 9, 14.29% Applied Physics Letters 9 publications, 14.29%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 5, 7.94% Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 5 publications, 7.94%
Journal of Applied Physics	Journal of Applied Physics, 3, 4.76% Journal of Applied Physics 3 publications, 4.76%
APL Materials	APL Materials, 3, 4.76% APL Materials 3 publications, 4.76%
ACS applied materials & interfaces	ACS applied materials & interfaces, 3, 4.76% ACS applied materials & interfaces 3 publications, 4.76%
Nanoscale	Nanoscale, 3, 4.76% Nanoscale 3 publications, 4.76%
Physical Review B	Physical Review B, 2, 3.17% Physical Review B 2 publications, 3.17%
Nanomaterials	Nanomaterials, 2, 3.17% Nanomaterials 2 publications, 3.17%
Nanotechnology	Nanotechnology, 2, 3.17% Nanotechnology 2 publications, 3.17%
Microelectronic Engineering	Microelectronic Engineering, 2, 3.17% Microelectronic Engineering 2 publications, 3.17%
Advanced Materials Interfaces	Advanced Materials Interfaces, 2, 3.17% Advanced Materials Interfaces 2 publications, 3.17%
ACS Applied Electronic Materials	ACS Applied Electronic Materials, 2, 3.17% ACS Applied Electronic Materials 2 publications, 3.17%
Nanoscale Advances	Nanoscale Advances, 2, 3.17% Nanoscale Advances 2 publications, 3.17%
AIP Advances	AIP Advances, 1, 1.59% AIP Advances 1 publication, 1.59%
Physical Review Applied	Physical Review Applied, 1, 1.59% Physical Review Applied 1 publication, 1.59%
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 1, 1.59% Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics 1 publication, 1.59%
IEEE Electron Device Letters	IEEE Electron Device Letters, 1, 1.59% IEEE Electron Device Letters 1 publication, 1.59%
Science China Materials	Science China Materials, 1, 1.59% Science China Materials 1 publication, 1.59%
JOM	JOM, 1, 1.59% JOM 1 publication, 1.59%
Applied Physics Express	Applied Physics Express, 1, 1.59% Applied Physics Express 1 publication, 1.59%
Semiconductor Science and Technology	Semiconductor Science and Technology, 1, 1.59% Semiconductor Science and Technology 1 publication, 1.59%
Nano Express	Nano Express, 1, 1.59% Nano Express 1 publication, 1.59%
Materials Today Communications	Materials Today Communications, 1, 1.59% Materials Today Communications 1 publication, 1.59%
Journal of Alloys and Compounds	Journal of Alloys and Compounds, 1, 1.59% Journal of Alloys and Compounds 1 publication, 1.59%
Physica Status Solidi (A) Applications and Materials Science	Physica Status Solidi (A) Applications and Materials Science, 1, 1.59% Physica Status Solidi (A) Applications and Materials Science 1 publication, 1.59%
Advanced Functional Materials	Advanced Functional Materials, 1, 1.59% Advanced Functional Materials 1 publication, 1.59%
Physica Status Solidi - Rapid Research Letters	Physica Status Solidi - Rapid Research Letters, 1, 1.59% Physica Status Solidi - Rapid Research Letters 1 publication, 1.59%
ACS Nano	ACS Nano, 1, 1.59% ACS Nano 1 publication, 1.59%
ACS Photonics	ACS Photonics, 1, 1.59% ACS Photonics 1 publication, 1.59%
IEEE Journal of the Electron Devices Society	IEEE Journal of the Electron Devices Society, 1, 1.59% IEEE Journal of the Electron Devices Society 1 publication, 1.59%

	1 2 3 4 5 6 7 8 9

Citations by publishers

	2 4 6 8 10 12 14 16
American Institute of Physics (AIP)	American Institute of Physics (AIP), 16, 25.4% American Institute of Physics (AIP) 16 publications, 25.4%
American Chemical Society (ACS)	American Chemical Society (ACS), 8, 12.7% American Chemical Society (ACS) 8 publications, 12.7%
Japan Society of Applied Physics	Japan Society of Applied Physics, 6, 9.52% Japan Society of Applied Physics 6 publications, 9.52%
Wiley	Wiley, 5, 7.94% Wiley 5 publications, 7.94%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 5, 7.94% Royal Society of Chemistry (RSC) 5 publications, 7.94%
IOP Publishing	IOP Publishing, 4, 6.35% IOP Publishing 4 publications, 6.35%
Elsevier	Elsevier, 4, 6.35% Elsevier 4 publications, 6.35%
American Physical Society (APS)	American Physical Society (APS), 3, 4.76% American Physical Society (APS) 3 publications, 4.76%
IEEE	IEEE, 3, 4.76% IEEE 3 publications, 4.76%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 2, 3.17% Multidisciplinary Digital Publishing Institute (MDPI) 2 publications, 3.17%
Springer Nature	Springer Nature, 2, 3.17% Springer Nature 2 publications, 3.17%
American Vacuum Society	American Vacuum Society, 1, 1.59% American Vacuum Society 1 publication, 1.59%
RTU MIREA	RTU MIREA, 1, 1.59% RTU MIREA 1 publication, 1.59%
American Association for the Advancement of Science (AAAS)	American Association for the Advancement of Science (AAAS), 1, 1.59% American Association for the Advancement of Science (AAAS) 1 publication, 1.59%
Optical Society of America	Optical Society of America, 1, 1.59% Optical Society of America 1 publication, 1.59%
Science in China Press	Science in China Press, 1, 1.59% Science in China Press 1 publication, 1.59%
	2 4 6 8 10 12 14 16

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Zarubin S. et al. Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties // Applied Physics Letters. 2016. Vol. 109. No. 19. p. 192903.

GOST all authors (up to 50) Copy

Zarubin S., Suvorova E., Spiridonov M., Negrov D., Chernikova A., Markeev A. M., Zenkevich A. Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties // Applied Physics Letters. 2016. Vol. 109. No. 19. p. 192903.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.4966219

UR - https://doi.org/10.1063%2F1.4966219

TI - Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties

T2 - Applied Physics Letters

AU - Zarubin, S

AU - Suvorova, Elena

AU - Spiridonov, Maksim

AU - Negrov, Dmitrii

AU - Chernikova, Anna

AU - Markeev, Andrey M.

AU - Zenkevich, A.

PY - 2016

DA - 2016/11/07 00:00:00

PB - American Institute of Physics (AIP)

SP - 192903

IS - 19

VL - 109

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

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BibTex Copy

@article{2016_Zarubin,

author = {S Zarubin and Elena Suvorova and Maksim Spiridonov and Dmitrii Negrov and Anna Chernikova and Andrey M. Markeev and A. Zenkevich},

title = {Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties},

journal = {Applied Physics Letters},

year = {2016},

volume = {109},

publisher = {American Institute of Physics (AIP)},

month = {nov},

url = {https://doi.org/10.1063%2F1.4966219},

number = {19},

pages = {192903},

doi = {10.1063/1.4966219}

}

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Zarubin, S., et al. “Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties.” Applied Physics Letters, vol. 109, no. 19, Nov. 2016, p. 192903. https://doi.org/10.1063%2F1.4966219.

Found error?

Publisher

American Institute of Physics (AIP)

Journal

Applied Physics Letters

Quartile SCImago

Quartile WOS

Impact factor

ISSN

00036951 (Print)
10773118 (Electronic)

Labs

Laboratory of Functional Materials and Devices for Nanoelectronics

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