Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
A. Y. Polyakov
1
,
N. B. Smirnov
1
,
I. V. Shchemerov
1
,
K. D. Shcherbachev
1, 2
,
Jiancheng Yang
3
,
F. Ren
3
,
Gwangseok Yang
4
,
Jihyun Kim
4
,
A. Kuramata
5
,
4
5
Tamura Corporation and Novel Crystal Technology, Inc. 5 , Sayama Saitama 350-1328, Japan
|
Publication type: Journal Article
Publication date: 2018-01-15
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract
Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350–380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm−2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.
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Total citations:
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Citations from 2024:
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Polyakov A. Y. et al. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage // Applied Physics Letters. 2018. Vol. 112. No. 3. p. 32107.
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Polyakov A. Y., Smirnov N. B., Shchemerov I. V., Shcherbachev K. D., Yang J., Ren F., Yang G., Kim J., Kuramata A., Pearton S. J. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage // Applied Physics Letters. 2018. Vol. 112. No. 3. p. 32107.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1063/1.5012993
UR - https://doi.org/10.1063/1.5012993
TI - Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
T2 - Applied Physics Letters
AU - Polyakov, A. Y.
AU - Smirnov, N. B.
AU - Shchemerov, I. V.
AU - Shcherbachev, K. D.
AU - Yang, Jiancheng
AU - Ren, F.
AU - Yang, Gwangseok
AU - Kim, Jihyun
AU - Kuramata, A.
AU - Pearton, Stephen J.
PY - 2018
DA - 2018/01/15
PB - AIP Publishing
SP - 32107
IS - 3
VL - 112
SN - 0003-6951
SN - 1077-3118
ER -
Cite this
BibTex (up to 50 authors)
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@article{2018_Polyakov,
author = {A. Y. Polyakov and N. B. Smirnov and I. V. Shchemerov and K. D. Shcherbachev and Jiancheng Yang and F. Ren and Gwangseok Yang and Jihyun Kim and A. Kuramata and Stephen J. Pearton},
title = {Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage},
journal = {Applied Physics Letters},
year = {2018},
volume = {112},
publisher = {AIP Publishing},
month = {jan},
url = {https://doi.org/10.1063/1.5012993},
number = {3},
pages = {32107},
doi = {10.1063/1.5012993}
}
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MLA
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Polyakov, A. Y., et al. “Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage.” Applied Physics Letters, vol. 112, no. 3, Jan. 2018, p. 32107. https://doi.org/10.1063/1.5012993.