Journal of Applied Physics, volume 125, issue 15, pages 151601

Large-scale array of resonant-tunneling-diode terahertz oscillators for high output power at 1 THz

Publication type: Journal Article
Publication date: 2019-03-28
scimago Q2
SJR: 0.649
CiteScore: 5.4
Impact factor: 2.7
ISSN: 00218979, 10897550
General Physics and Astronomy
Abstract
We proposed and fabricated large-scale arrays of resonant tunneling diode (RTD) oscillators for high-output-power terahertz (THz) sources. The array element is composed of an RTD, a slot resonator, and a dipole array antenna on a dielectric layer stacked on the RTD. In this structure, the output power is radiated in the upward direction of the substrate without a hemispherical silicon lens. The dipole array antenna was designed so that the average output power determined by the variation in the size of the RTD in the array was maximized. The experimental output power was proportional to the element number, and its value was 0.73 mW for an 89-element array at ∼1 THz in a pulsed mode with a repetition rate of 300 Hz and a duty ratio of 10%. Multiple peaks were observed in the oscillation spectra, because the elements were not intentionally coupled with each other. The average output power per element was 9 μW in the array, which was lower than that of the separated single oscillators (21 μW). Possible causes of this difference are discussed.We proposed and fabricated large-scale arrays of resonant tunneling diode (RTD) oscillators for high-output-power terahertz (THz) sources. The array element is composed of an RTD, a slot resonator, and a dipole array antenna on a dielectric layer stacked on the RTD. In this structure, the output power is radiated in the upward direction of the substrate without a hemispherical silicon lens. The dipole array antenna was designed so that the average output power determined by the variation in the size of the RTD in the array was maximized. The experimental output power was proportional to the element number, and its value was 0.73 mW for an 89-element array at ∼1 THz in a pulsed mode with a repetition rate of 300 Hz and a duty ratio of 10%. Multiple peaks were observed in the oscillation spectra, because the elements were not intentionally coupled with each other. The average output power per element was 9 μW in the array, which was lower than that of the separated single oscillators (21 μW). Possible cause...
Found 17
By date By citations
AIP Publishing
Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators
Asada M., Suzuki S., Fukuma T.
AIP Advances scimago Q3 wos Q4 Open Access , 
2017-11-01,  citations by CoLab: 13 ,  PDF,  Abstract  
The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.
Japan Society of Applied Physics
Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss
Maekawa T., Kanaya H., Suzuki S., Asada M.
Applied Physics Express scimago Q2 wos Q3 Open Access , 
2016-01-22,  citations by CoLab: 276 , 
Power Combination in 1 THz Resonant-Tunneling-Diode Oscillators Integrated with Patch Antennas
KASAGI K., OSHIMA N., SUZUKI S., ASADA M.
IEICE Transactions on Electronics scimago Q4 wos Q4 , 
2015-11-30,  citations by CoLab: 8 , 
Japan Society of Applied Physics
Development and future prospects of terahertz technology
Hangyo M.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes scimago Q2 wos Q3 , 
2015-11-09,  citations by CoLab: 138 ,  Abstract  
Recently, the technology of terahertz (THz) waves, which have been called undeveloped electromagnetic waves, has been making remarkable progress. In addition to the technologies of generating THz waves using lasers, which are promoting this progress, advances are being made in THz generation methods using electronic devices and accelerators, and various THz optical components have been actively developed. The applications of THz technology are also becoming increasingly widespread. In this report, I will review these developments and discuss the future prospects of this field.
Japan Society of Applied Physics
Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times
Kanaya H., Maekawa T., Suzuki S., Asada M.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes scimago Q2 wos Q3 , 
2015-08-21,  citations by CoLab: 50 , 
Institute of Electrical and Electronics Engineers (IEEE)
High-Power Operation of Terahertz Oscillators With Resonant Tunneling Diodes Using Impedance-Matched Antennas and Array Configuration
Suzuki S., Shiraishi M., Shibayama H., Asada M.
IEEE Journal of Selected Topics in Quantum Electronics scimago Q1 wos Q2 Open Access , 
2013-01-01,  citations by CoLab: 142 ,  Abstract  
We report the theoretical and experimental results of an examination of the structure needed to achieve high output power in resonant tunneling diode (RTD) oscillators in the terahertz range. An offset-fed slot antenna and antenna width adjustments were employed in a single oscillator to increase the output power by increasing the radiation conductance and impedance matching. A high output power oscillation (~400 μW) at 530-590 GHz was obtained by RTDs with a large negative deferential conductance (NDC) region and offset-fed slot antennas. The maximization of the output power that was obtained by adjusting the antenna width was attributed to the impedance matching between the RTD and antenna. An output power of >;1 mW is theoretically expected in an oscillator that combines an RTD with a large NDC region, offset-fed slot antenna, and antenna width adjustment. In an array configuration, oscillators with an offset structure were employed for array elements and connected together with the metal-insulator-metal stub structure. A single peak was observed in the oscillation spectrum, and combined output powers of 610, 270, and 180 μW at 620, 770, and 810 GHz were obtained in a two-element array.
AIP Publishing
Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz
Feiginov M., Sydlo C., Cojocari O., Meissner P.
Applied Physics Letters scimago Q1 wos Q2 , 
2011-12-05,  citations by CoLab: 198 ,  Abstract  
We present resonant-tunnelling-diode (RTD) oscillators operating at the fundamental frequency of 1111 GHz. We show that our RTDs and RTD oscillators have much room for further improvement of their parameters and for further increase of their operating frequencies. The operating frequencies of several THz should be achievable with RTD oscillators. Our study also shows that operation of RTDs beyond the relaxation-time limit at THz frequencies should be possible. RTD oscillators under study are extremely compact (less than a square millimeter) room-temperature sources of coherent cw THz radiation. Such sources should enable plenty of real-world THz applications.
Terahertz technologies: present and future
Nagatsuma T.
IEICE Electronics Express scimago Q3 wos Q4 , 
2011-07-25,  citations by CoLab: 169 , 
Institution of Engineering and Technology (IET)
Thin-film transmission lines using cyclic olefin copolymer for millimetre-wave and terahertz integrated circuits
Peytavit E., Donche C., Lepilliet S., Ducournau G., Lampin J.-.
Electronics Letters scimago Q3 wos Q4 Open Access , 
2011-03-29,  citations by CoLab: 42 ,  Abstract  
Thin-film microstrip lines and a grounded coplanar waveguide using a cyclic-olefin copolymer as low-loss thin film have been fabricated and characterised up to 220 GHz. Attenuation as low as 0.6 dB/mm around 220 GHz has been measured on a grounded coplanar waveguide with a 22 m-thick cyclic-olefin copolymer thin film.
Optica Publishing Group
Bendable, low-loss Topas fibers for the terahertz frequency range
Nielsen K., Rasmussen H.K., Adam A.J., Planken P.C., Bang O., Jepsen P.U.
Optics Express scimago Q1 wos Q2 Open Access , 
2009-05-06,  citations by CoLab: 391 ,  PDF,  Abstract  
We report on a new class of polymer photonic crystal fibers for low-loss guidance of THz radiation. The use of the cyclic olefin copolymer Topas, in combination with advanced fabrication technology, results in bendable THz fibers with unprecedented low loss and low material dispersion in the THz regime. We demonstrate experimentally how the dispersion may be engineered by fabricating both high- and low-dispersion fibers with zero-dispersion frequency in the regime 0.5-0.6 THz. Near-field, frequency-resolved characterization with high spatial resolution of the amplitude and phase of the modal structure proves that the fiber is single-moded over a wide frequency range, and we see the onset of higher-order modes at high frequencies as well as indication of microporous guiding at low frequencies and high porosity of the fiber. Transmission spectroscopy demonstrates low-loss propagation (< 0.1 dB/cm loss at 0.6 THz) over a wide frequency range.
AIP Publishing
Theoretical analysis of coupled oscillator array using resonant tunneling diodes in subterahertz and terahertz range
Asada M., Suzuki S.
Journal of Applied Physics scimago Q2 wos Q2 , 
2008-06-15,  citations by CoLab: 26 ,  Abstract  
Power combining with array configuration is an effective method for high output power in oscillators with resonant tunneling diodes (RTDs) in subterahertz and terahertz range. In this paper, output power and stability are analyzed for coupled oscillator array of RTDs. The coupled van der Pol equations are derived from the equivalent circuit for two-element oscillator arrays at first, and the condition in which only the fundamental oscillation mode stably oscillates is shown. The oscillation frequency of the array is single due to the mutual injection locking even if the individual frequencies of oscillator elements are different. Minimum difference between the individual frequencies to keep the mutual injection locking is analyzed. Experimental results are explained with theory. The analysis is extended to multielement oscillator arrays, and characteristics of oscillation modes, stability, combined output power, and locking range of the frequency difference between the elements are obtained. Theoretical combined output power increases with element number in proportion roughly to square of the element number if the frequency difference between the elements is small, and decreases with frequency difference. Different array configurations for stable and high-power operation are also discussed briefly.
Japan Society of Applied Physics
Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
Asada M., Suzuki S., Kishimoto N.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes scimago Q2 wos Q3 , 
2008-06-13,  citations by CoLab: 274 ,  Abstract  
Resonant tunneling diodes (RTDs) have the potential for use as compact and coherent terahertz (THz) sources operating at room temperature. In this paper, sub-THz and THz oscillators with RTDs integrated on planar circuits are described. Fundamental oscillation up to 0.65 THz and harmonic oscillation up to 1.02 THz were obtained at room temperature in our recent study. Limiting factors for oscillation frequency and output power are theoretically analyzed including tunneling and transit-time effects and parasitic elements. Oscillation frequency and its dependence on RTD size are in good agreement with the measured results. Based on this result, it is shown that fundamental oscillation up to 2.3 THz and an output power of 60 µW at 1 THz are theoretically expected by improving the structures of the RTD and the antenna. Voltage-controlled oscillation, which is useful for the precise control of frequency, is observed in the RTD oscillators. Coherent power combining in an array configuration to achieve high output power as well as mutual injection locking between the array elements are also described.
IOP Publishing
Imaging with terahertz radiation
Chan W.L., Deibel J., Mittleman D.M.
Reports on Progress in Physics scimago Q1 wos Q1 Open Access , 
2007-07-12,  citations by CoLab: 793 ,  Abstract  
Within the last several years, the field of terahertz science and technology has changed dramatically. Many new advances in the technology for generation, manipulation, and detection of terahertz radiation have revolutionized the field. Much of this interest has been inspired by the promise of valuable new applications for terahertz imaging and sensing. Among a long list of proposed uses, one finds compelling needs such as security screening and quality control, as well as whimsical notions such as counting the almonds in a bar of chocolate. This list has grown in parallel with the development of new technologies and new paradigms for imaging and sensing. Many of these proposed applications exploit the unique capabilities of terahertz radiation to penetrate common packaging materials and provide spectroscopic information about the materials within. Several of the techniques used for terahertz imaging have been borrowed from other, more well established fields such as x-ray computed tomography and synthetic aperture radar. Others have been developed exclusively for the terahertz field, and have no analogies in other portions of the spectrum. This review provides a comprehensive description of the various techniques which have been employed for terahertz image formation, as well as discussing numerous examples which illustrate the many exciting potential uses for these emerging technologies.
Springer Nature
Cutting-edge terahertz technology
Tonouchi M.
Nature Photonics scimago Q1 wos Q1 , 
2007-02-03,  citations by CoLab: 5302 ,  Abstract  
Research into terahertz technology is now receiving increasing attention around the world, and devices exploiting this waveband are set to become increasingly important in a very diverse range of applications. Here, an overview of the status of the technology, its uses and its future prospects are presented.
Institution of Engineering and Technology (IET)
Characterisation of olefin copolymers using terahertz spectroscopy
Sengupta A., Bandyopadhyay A., Bowden B.F., Harrington J.A., Federici J.F.
Electronics Letters scimago Q3 wos Q4 Open Access , 
2006-12-13,  citations by CoLab: 45 ,  Abstract  
Terahertz (THz) time-domain spectroscopy has been used to characterise cyclic olefin polymers in the range 0.2–1.2 THz. A comparison of the optical properties of the polymer with standard materials currently used to fabricate THz optics, namely high density polyethylene and Picarin, is also presented. This comparison suggests that olefin copolymers are potential candidates for manufacturing optical components for the GHz and THz range.
Found 96
By date By citations
IOP Publishing
Mid-infrared emission resonating with longitudinal optical phonon from surface micro-structures on ternary compound semiconductors
Yoshikawa D., Kishi M., Hnin L.L., MIYAKE H., Ishitani Y.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes scimago Q2 wos Q3 , 
2025-04-01,  citations by CoLab: 0 ,  Abstract  
Abstract We exhibit the longitudinal optical (LO) or LO-like phonon resonant continuous-wave thermal radiation emission peaks via surface microstructures on ternary compound semiconductors at 630 K. Al x Ga1−x N and Ga y In1−y P thin films (0 ≤ x, y ≤ 1) are investigated. The properties of double peak emission from the phosphide alloys and single peak emission from the nitride alloys agree with the properties of persistent and amalgamic LO mode characteristics of respective alloys. The control of alloy composition allows for control of the frequency of the thermal radiation.
SPIE-Intl Soc Optical Eng
Frequency tunable Minkowski fractal antenna for resonant tunneling diode based terahertz transceivers
Muthuramalingam K., Wang W.
2025-03-19,  citations by CoLab: 0 , 
AIP Publishing
Evaluation of the device characteristics of Bi2Sr2CaCu2O8+δ terahertz-wave emitters using wet-etching techniques
Kikuchi R., Nakagawa S., Enomoto Y., Kuzumi Y., Yamada S., Maeshima K., Yamauchi Y., Minami H., Kashiwagi T.
Journal of Applied Physics scimago Q2 wos Q2 , 
2025-01-28,  citations by CoLab: 0 ,  Abstract  
Understanding the device characteristics associated with the shape and size of crystal chips is a key requirement for developing high-performance terahertz (THz) wave-emitting devices made of high-temperature superconductor Bi2Sr2CaCu2O8+δ(Bi2212) crystal chips, because these parameters reflect the emission frequency, emission power, self-heating conditions, and impedance matching. Wet-etching techniques are beneficial for creating comparable emitting chips from the same crystal fragment to further understand the above points regarding using Bi2212-crystal chips. Using wet-etching techniques, we prepared rectangular crystal chips with the same area using three different width (w) and length (L) aspect ratios and compared their emission characteristics. The range of the observed emission frequencies tended to be less dependent on the w/L ratio. However, the three samples differed significantly in terms of the excitation modes expected from the w/L ratio. When the aspect ratio approached one, the results indicated a tendency to resonate in the higher excitation modes. The excitation modes along the width of the chip were suppressed by decreasing the w/L ratio owing to the increased resonance frequencies of the transverse magnetic TM(m,0) modes. Although further studies are required, especially in terms of output enhancement, the results obtained herein are expected to aid in producing devices that can operate in the desired excitation mode.
Elsevier
Impact of material-dependent radiation – longitudinal optical phonon interaction on thermal electric-dipole radiation from surface metal − semiconductor grating structures
Lin B., Lai Lai Aye H., Yoshikawa D., Ishitani Y.
Infrared Physics and Technology scimago Q2 wos Q2 , 
2024-11-01,  citations by CoLab: 1 , 
Institute of Electrical and Electronics Engineers (IEEE)
270-GHz Radiator Module for Eight-Way Incoherent Power Combining of InP HBT Oscillators
Koh Y.K., Kim M.
IEEE Microwave and Wireless Technology Letters , 
2024-11-01,  citations by CoLab: 0 , 
Institute of Electrical and Electronics Engineers (IEEE)
Network Model for Parametric Synthesis of Resonant-Tunnel Heterostructure
Vetrova N.A., Meshkov S.A., Pchelintsev K.P.
2024-09-27,  citations by CoLab: 0 , 
Institute of Electrical and Electronics Engineers (IEEE)
Research of anapole modes in ring-shaped subwavelength periodic structures fabricated on thin free-standing metal film
Ayyagari S.R., Basharin A., Indrišiūnas S., Pashnev D., Janonis V., Kuzhir P., Ducournau G., Kašalynas I.
2024-09-02,  citations by CoLab: 0 , 
Institute of Electrical and Electronics Engineers (IEEE)
Generalised Analysis of Output-Power Limitations of Resonant-Tunnelling-Diode Oscillators with Symmetrical Slot Antennas
Picco G., Ourednik P., Nguyen D.T., Feiginov M.
IEEE Transactions on Terahertz Science and Technology scimago Q1 wos Q2 , 
2024-09-01,  citations by CoLab: 0 , 
IOP Publishing
Fundamentals and recent advances of terahertz resonant tunneling diodes
Suzuki S., ASADA M.
Applied Physics Express scimago Q2 wos Q3 Open Access , 
2024-07-01,  citations by CoLab: 6 ,  PDF,  Abstract  
Abstract In the last two decades, rapid advancements in room-temperature oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for high-frequency operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.
American Vacuum Society
Millimeter-wave generation with a room-temperature nonlinear quantum cascade laser
Hayashi S., Ito A., Dougakiuchi T., Hitaka M., Fujita K.
Journal of Vacuum Science and Technology B scimago Q3 wos Q3 , 
2024-06-05,  citations by CoLab: 1 ,  Abstract  
Millimeter-wave difference frequency generation is reported for a dual-wavelength mid-infrared quantum cascade laser operating at room temperature. To overcome a low mid-infrared-to-terahertz conversion efficiency below 1 THz, a long-wavelength, high-performance mid-infrared quantum cascade laser structure with higher nonlinear susceptivity is adopted. By designing the efficient allocation of mid-infrared pumps to two sections of fabricated distributed feedback grating, a closely separated dual-wavelength (λ1 ∼ 13.53 μm and λ2 ∼ 13.39 μm) laser oscillation was obtained. Consequently, a millimeter-wave emission at a frequency of 231 GHz was successfully observed at room temperature.
Optica Publishing Group
Demonstration of Photonics-based D-band Integrated Localization and Communication
Wang Q., Deng Y., Mishra D., Xie Y., Aboutanios E., Atakaramians S.
Applied Optics scimago Q2 wos Q3 , 
2024-05-14,  citations by CoLab: 2 ,  Abstract  
The terahertz spectrum has the ability to provide high-speed communication and millimeter-level resolution. As a result, terahertz-integrated sensing and communication (ISAC) has been identified as a key enabler for 6G wireless networks. This work discusses a photonics-based D-band communication system for integrated high-resolution localization and high-speed wireless communication. Our empirical results show that a communication rate of 5 Gbps over a distance of 1.5 m and location identification of the target with millimeter-level (<4mm) range resolution can be conducted simultaneously using the same signal. We also show that the error due to the thickness of the beam splitter can be eliminated, while the quantization error and the random drift errors are the limiting factors of the resolution achieved. This experimental demonstration using D-band communication indicates that terahertz ISAC can be realized for 6G networks while considering the underlying system restrictions (e.g., bandwidth limit and lens diameter).
IOP Publishing
Terahertz resonant-tunneling-diode oscillator with two offset-fed slot-ring antennas
Endo S., SUZUKI S.
Applied Physics Express scimago Q2 wos Q3 Open Access , 
2024-04-01,  citations by CoLab: 4 ,  PDF,  Abstract  
Abstract We proposed and fabricated a terahertz resonant-tunneling-diode (RTD) oscillator integrated with two offset slot-ring antennas for high-output power and high-directivity radiation. In this device, the length of the antenna, approximately half the wavelength of the oscillation frequency, enables efficient terahertz radiation. The increased radiation conductance, resulting from the offset and the two slot-ring antennas, enables higher output power. Additionally, radiation directivity can be improved using two slot-ring antennas. The fabricated device generated high-power oscillation of 1.29 mW at 412 GHz. This is the highest output power of a single electronic device oscillator in the 400 GHz range.
SPIE-Intl Soc Optical Eng
Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides
Ishitani Y., Lin B., Lai Lai Aye H., Yoshikawa D., Miyake H., Ueno K., Fujioka H.
2024-03-08,  citations by CoLab: 0 , 
American Physical Society (APS)
Exceptional-point degeneracy as a desirable operation point for an oscillator array with discrete nonlinear gain and radiative elements
Nikzamir A., Capolino F.
Physical Review Applied scimago Q1 wos Q2 , 
2024-02-20,  citations by CoLab: 4 ,  Abstract  
We show that an oscillator array prefers to operate at an exceptional point of degeneracy (EPD) occurring in a waveguide periodically loaded with discrete nonlinear gain and radiating elements. The concept of the EPD is employed to conceptualize an exceptional synchronization regime, which leads to enhanced radiating power efficiency. The system maintains a steady-state degenerate mode of oscillation at a frequency of 3 GHz, even when the small-signal nonlinear gain values are nonuniform along the array. We designed the system using small-signal gain to work at the EPD of zero phase shift in consecutive unit cells. Contrarily to the original expectation of zero phase shift, after reaching saturation, the time-domain signal in consecutive unit cells displays a $\ensuremath{\pi}$ phase shift. Hence, we demonstrate that the saturated system tends to oscillate at a distinct EPD, associated to a $\ensuremath{\pi}$ phase shift between consecutive cells, than the one at which the system was originally designed using small-signal gain. This alternative EPD at which the nonlinear system is landing is associated to higher radiating power efficiency with respect to power provided by nonlinear gains. Finally, we demonstrate that the oscillation frequency is independent of the length of the array, contrarily to what happens ordinary oscillating systems based on one-dimensional cavity resonances. These findings may have a high impact on high-power radiating arrays with distributed active elements.
AIP Publishing
Study on the effect of Bi/Sr ratio on the device characteristics of high-Tc superconducting terahertz wave emitters made of Bi2Sr2CaCu2O8+δ single crystals
Nakayama M., Nakagawa S., Yamaguchi T., Minami H., Kadowaki K., Nakao H., Mochiku T., Tsujimoto M., Ishida S., Eisaki H., Kashiwagi T.
Journal of Applied Physics scimago Q2 wos Q2 , 
2024-02-16,  citations by CoLab: 2 ,  Abstract  
To obtain high-performance THz-wave-emitting devices made of single crystals of Bi2Sr2CaCu2O8+δ (Bi2212), a high-temperature superconductor, an understanding of the device characteristics based on crystal characteristics can be a key issue because, in principle, the electrical properties of the intrinsic Josephson junctions (IJJs) constructed in Bi2212 crystals highly depend on crystal conditions, such as carrier concentration, crystal homogeneities, and crystal defects. To evaluate the tendencies of the device characteristics associated with crystal characteristics, we prepared Bi2212 crystals with different Bi/Sr ratios (x=0.05, 0.15, and 0.25) and δ values (annealed under N2 or O2 gas flow conditions). The unit cell parameter c decreased as the Bi/Sr ratio or δ increased. For the same annealing conditions under N2 gas flow, the superconducting transition temperature as well as the size of the hysteresis loop of the current–voltage characteristics and emission characteristics were significantly suppressed for the sample with x=0.25 compared with the corresponding values for the samples with x=0.05 and 0.15. The experimental results clearly indicate that parameters, such as the Bi/Sr ratio and annealing conditions, are crucial factors in determining the electrical characteristics of a device. This information can be a useful guide for the preparation of crystals for IJJ THz-wave devices that can be fine-tuned according to the desired device characteristics.

Top-30

Journals

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IEEE Transactions on Terahertz Science and Technology
IEEE Transactions on Terahertz Science and Technology, 8, 8.33%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 7, 7.29%
Applied Physics Express
Applied Physics Express, 6, 6.25%
Journal of Applied Physics
Journal of Applied Physics, 4, 4.17%
Applied Physics Letters
Applied Physics Letters, 4, 4.17%
Sensors
Sensors, 4, 4.17%
Journal of Infrared, Millimeter, and Terahertz Waves
Journal of Infrared, Millimeter, and Terahertz Waves, 3, 3.13%
Physical Review Applied
Physical Review Applied, 2, 2.08%
Journal of Vacuum Science and Technology B
Journal of Vacuum Science and Technology B, 2, 2.08%
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics, 2, 2.08%
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2, 2.08%
IEICE Transactions on Electronics, 2, 2.08%
Semiconductor Science and Technology
Semiconductor Science and Technology, 1, 1.04%
AIP Advances
AIP Advances, 1, 1.04%
APL Photonics
APL Photonics, 1, 1.04%
Photonics
Photonics, 1, 1.04%
Micromachines
Micromachines, 1, 1.04%
Applied Sciences (Switzerland)
Applied Sciences (Switzerland), 1, 1.04%
Electronics (Switzerland)
Electronics (Switzerland), 1, 1.04%
Nature Communications
Nature Communications, 1, 1.04%
Solid-State Electronics
Solid-State Electronics, 1, 1.04%
Chinese Physics B
Chinese Physics B, 1, 1.04%
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 1, 1.04%
Advanced Optical Materials
Advanced Optical Materials, 1, 1.04%
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters, 1, 1.04%
Physica Status Solidi (A) Applications and Materials Science
Physica Status Solidi (A) Applications and Materials Science, 1, 1.04%
ACS Photonics
ACS Photonics, 1, 1.04%
Journal of Surface Investigation
Journal of Surface Investigation, 1, 1.04%
IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)
IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India), 1, 1.04%
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Publishers

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Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers (IEEE), 29, 30.21%
AIP Publishing
AIP Publishing, 10, 10.42%
MDPI
MDPI, 9, 9.38%
Japan Society of Applied Physics
Japan Society of Applied Physics, 9, 9.38%
IOP Publishing
IOP Publishing, 7, 7.29%
Springer Nature
Springer Nature, 5, 5.21%
Elsevier
Elsevier, 4, 4.17%
Wiley
Wiley, 4, 4.17%
Institute of Electronics, Information and Communications Engineers (IEICE), 3, 3.13%
American Physical Society (APS)
American Physical Society (APS), 2, 2.08%
American Vacuum Society
American Vacuum Society, 2, 2.08%
Optica Publishing Group
Optica Publishing Group, 2, 2.08%
SPIE-Intl Soc Optical Eng
SPIE-Intl Soc Optical Eng, 2, 2.08%
American Chemical Society (ACS)
American Chemical Society (ACS), 1, 1.04%
Pleiades Publishing
Pleiades Publishing, 1, 1.04%
Taylor & Francis
Taylor & Francis, 1, 1.04%
Walter de Gruyter
Walter de Gruyter, 1, 1.04%
The Surface Science Society of Japan, 1, 1.04%
The Laser Society of Japan, 1, 1.04%
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