Open Access
β-Gallium oxide power electronics
Andrew J Green
1
,
James Speck
2
,
Grace Xing
3
,
Peter Moens
4
,
Fredrik Allerstam
4
,
Krister Gumaelius
4
,
Thomas Neyer
4
,
Andrea Arias Purdue
5
,
Vivek Mehrotra
5
,
Akito Kuramata
6
,
Kohei Sasaki
6
,
Shinya Watanabe
6
,
Kimiyoshi Koshi
6
,
John Blevins
1
,
O Bierwagen
7
,
Kevin Leedy
1
,
Aaron R Arehart
8
,
Adam T Neal
1
,
Shin Mou
1
,
Steven A Ringel
8
,
Avinash Kumar
9
,
Ankit Sharma
9
,
Krishnendu Ghosh
9
,
Uttam Singisetti
9
,
Wenshen Li
2
,
Kelson Chabak
1
,
Kyle Liddy
1
,
Ahmad E. Islam
1
,
Siddharth Rajan
8
,
Samuel Graham
10
,
Sukwon Choi
11
,
Zhe Cheng
12
,
Masataka Higashiwaki
13
1
Air Force Research Laboratory 1 , Wright Patterson Air Force Base, Ohio 45433, USA
|
4
ON Semiconductor 4 , Oudenaarde 9700, Belgium
|
5
Teledyne 5 , Thousand Oaks, California 91360, USA
|
6
Novel Crystal Technology, Inc. 6 , Tokyo 100-0005, Japan
|
7
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund 7 , Berlin 10117, Germany
|
Publication type: Journal Article
Publication date: 2022-02-01
scimago Q1
wos Q2
SJR: 1.124
CiteScore: 7.9
Impact factor: 4.5
ISSN: 2166532X
General Materials Science
General Engineering
Abstract
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
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Metrics
428
Total citations:
428
Citations from 2024:
262
(61.5%)
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MLA
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GOST
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Green A. J. et al. β-Gallium oxide power electronics // APL Materials. 2022. Vol. 10. No. 2. p. 29201.
GOST all authors (up to 50)
Copy
Green A. J., Speck J., Xing G., Moens P., Allerstam F., Gumaelius K., Neyer T., Arias Purdue A., Mehrotra V., Kuramata A., Sasaki K., Watanabe S., Koshi K., Blevins J., Bierwagen O., Krishnamoorthy S., Leedy K., Arehart A. R., Neal A. T., Mou S., Ringel S. A., Kumar A., Sharma A., Ghosh K., Singisetti U., Li W., Chabak K., Liddy K., Islam A. E., Rajan S., Graham S., Choi S., Cheng Z., Higashiwaki M. β-Gallium oxide power electronics // APL Materials. 2022. Vol. 10. No. 2. p. 29201.
Cite this
RIS
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TY - JOUR
DO - 10.1063/5.0060327
UR - https://doi.org/10.1063/5.0060327
TI - β-Gallium oxide power electronics
T2 - APL Materials
AU - Green, Andrew J
AU - Speck, James
AU - Xing, Grace
AU - Moens, Peter
AU - Allerstam, Fredrik
AU - Gumaelius, Krister
AU - Neyer, Thomas
AU - Arias Purdue, Andrea
AU - Mehrotra, Vivek
AU - Kuramata, Akito
AU - Sasaki, Kohei
AU - Watanabe, Shinya
AU - Koshi, Kimiyoshi
AU - Blevins, John
AU - Bierwagen, O
AU - Krishnamoorthy, Sriram
AU - Leedy, Kevin
AU - Arehart, Aaron R
AU - Neal, Adam T
AU - Mou, Shin
AU - Ringel, Steven A
AU - Kumar, Avinash
AU - Sharma, Ankit
AU - Ghosh, Krishnendu
AU - Singisetti, Uttam
AU - Li, Wenshen
AU - Chabak, Kelson
AU - Liddy, Kyle
AU - Islam, Ahmad E.
AU - Rajan, Siddharth
AU - Graham, Samuel
AU - Choi, Sukwon
AU - Cheng, Zhe
AU - Higashiwaki, Masataka
PY - 2022
DA - 2022/02/01
PB - AIP Publishing
SP - 29201
IS - 2
VL - 10
SN - 2166-532X
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2022_Green,
author = {Andrew J Green and James Speck and Grace Xing and Peter Moens and Fredrik Allerstam and Krister Gumaelius and Thomas Neyer and Andrea Arias Purdue and Vivek Mehrotra and Akito Kuramata and Kohei Sasaki and Shinya Watanabe and Kimiyoshi Koshi and John Blevins and O Bierwagen and Sriram Krishnamoorthy and Kevin Leedy and Aaron R Arehart and Adam T Neal and Shin Mou and Steven A Ringel and Avinash Kumar and Ankit Sharma and Krishnendu Ghosh and Uttam Singisetti and Wenshen Li and Kelson Chabak and Kyle Liddy and Ahmad E. Islam and Siddharth Rajan and Samuel Graham and Sukwon Choi and Zhe Cheng and Masataka Higashiwaki},
title = {β-Gallium oxide power electronics},
journal = {APL Materials},
year = {2022},
volume = {10},
publisher = {AIP Publishing},
month = {feb},
url = {https://doi.org/10.1063/5.0060327},
number = {2},
pages = {29201},
doi = {10.1063/5.0060327}
}
Cite this
MLA
Copy
Green, Andrew J., et al. “β-Gallium oxide power electronics.” APL Materials, vol. 10, no. 2, Feb. 2022, p. 29201. https://doi.org/10.1063/5.0060327.