volume 132 issue 3 pages 35701

Point defect creation by proton and carbon irradiation of α-Ga2O3

Vladimir I. Nikolaev 2, 3
IGOR N. MESHKOV 4
K. Siemek 4
Petr B Lagov 1, 5
A. I. Pechnikov 2, 3
Oleg S Orlov 4
Alexey A Sidorin 4
Sergey I Stepanov 2, 3
Ivan V. Shchemerov 1
A. Vasilev 1
A. M. Chernykh 1
Anton A Losev 7
Alexandr D Miliachenko 7
Igor A Khrisanov 7
Yu S Pavlov 5
U A Kobets 8
Publication typeJournal Article
Publication date2022-07-15
scimago Q2
wos Q3
SJR0.580
CiteScore5.1
Impact factor2.5
ISSN00218979, 10897550
General Physics and Astronomy
Abstract

Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 × 1015 cm−2 and with 7 MeV C4+ ions with a fluence of 1.3 × 1013 cm−2 and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at Ec-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium–oxygen divacancies VGa–VO, and oxygen vacancies VO. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of VGa and VGa–VO.

Found 
Found 

Top-30

Journals

1
2
3
4
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
4 publications, 19.05%
ECS Journal of Solid State Science and Technology
2 publications, 9.52%
Journal Physics D: Applied Physics
2 publications, 9.52%
Optical Materials: X
2 publications, 9.52%
Journal of Alloys and Compounds
1 publication, 4.76%
Applied Physics Letters
1 publication, 4.76%
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
1 publication, 4.76%
Russian Microelectronics
1 publication, 4.76%
Journal of Vacuum Science and Technology B
1 publication, 4.76%
Surface and Interface Analysis
1 publication, 4.76%
Physica Status Solidi (B): Basic Research
1 publication, 4.76%
APL Materials
1 publication, 4.76%
Advanced Science
1 publication, 4.76%
Applied Physics Reviews
1 publication, 4.76%
IEEE Photonics Technology Letters
1 publication, 4.76%
1
2
3
4

Publishers

1
2
3
4
5
American Vacuum Society
5 publications, 23.81%
Elsevier
3 publications, 14.29%
AIP Publishing
3 publications, 14.29%
Wiley
3 publications, 14.29%
The Electrochemical Society
2 publications, 9.52%
IOP Publishing
2 publications, 9.52%
National University of Science & Technology (MISiS)
1 publication, 4.76%
Pleiades Publishing
1 publication, 4.76%
Institute of Electrical and Electronics Engineers (IEEE)
1 publication, 4.76%
1
2
3
4
5
  • We do not take into account publications without a DOI.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
21
Share
Cite this
GOST |
Cite this
GOST Copy
Polyakov A. Y. et al. Point defect creation by proton and carbon irradiation of α-Ga2O3 // Journal of Applied Physics. 2022. Vol. 132. No. 3. p. 35701.
GOST all authors (up to 50) Copy
Polyakov A. Y., Nikolaev V. I., MESHKOV I. N., Siemek K., Lagov P. B., Shcherbachev K. D., Pechnikov A. I., Orlov O. S., Sidorin A. A., Stepanov S. I., Shchemerov I. V., Vasilev A., Chernykh A. M., Losev A. A., Miliachenko A. D., Khrisanov I. A., Pavlov Yu. S., Kobets U. A., Pearton S. J. Point defect creation by proton and carbon irradiation of α-Ga2O3 // Journal of Applied Physics. 2022. Vol. 132. No. 3. p. 35701.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1063/5.0100359
UR - https://pubs.aip.org/jap/article/132/3/035701/2837197/Point-defect-creation-by-proton-and-carbon
TI - Point defect creation by proton and carbon irradiation of α-Ga2O3
T2 - Journal of Applied Physics
AU - Polyakov, Alexander Y
AU - Nikolaev, Vladimir I.
AU - MESHKOV, IGOR N.
AU - Siemek, K.
AU - Lagov, Petr B
AU - Shcherbachev, K. D.
AU - Pechnikov, A. I.
AU - Orlov, Oleg S
AU - Sidorin, Alexey A
AU - Stepanov, Sergey I
AU - Shchemerov, Ivan V.
AU - Vasilev, A.
AU - Chernykh, A. M.
AU - Losev, Anton A
AU - Miliachenko, Alexandr D
AU - Khrisanov, Igor A
AU - Pavlov, Yu S
AU - Kobets, U A
AU - Pearton, Stephen J.
PY - 2022
DA - 2022/07/15
PB - AIP Publishing
SP - 35701
IS - 3
VL - 132
SN - 0021-8979
SN - 1089-7550
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2022_Polyakov,
author = {Alexander Y Polyakov and Vladimir I. Nikolaev and IGOR N. MESHKOV and K. Siemek and Petr B Lagov and K. D. Shcherbachev and A. I. Pechnikov and Oleg S Orlov and Alexey A Sidorin and Sergey I Stepanov and Ivan V. Shchemerov and A. Vasilev and A. M. Chernykh and Anton A Losev and Alexandr D Miliachenko and Igor A Khrisanov and Yu S Pavlov and U A Kobets and Stephen J. Pearton},
title = {Point defect creation by proton and carbon irradiation of α-Ga2O3},
journal = {Journal of Applied Physics},
year = {2022},
volume = {132},
publisher = {AIP Publishing},
month = {jul},
url = {https://pubs.aip.org/jap/article/132/3/035701/2837197/Point-defect-creation-by-proton-and-carbon},
number = {3},
pages = {35701},
doi = {10.1063/5.0100359}
}
MLA
Cite this
MLA Copy
Polyakov, Alexander Y., et al. “Point defect creation by proton and carbon irradiation of α-Ga2O3.” Journal of Applied Physics, vol. 132, no. 3, Jul. 2022, p. 35701. https://pubs.aip.org/jap/article/132/3/035701/2837197/Point-defect-creation-by-proton-and-carbon.