Scalable memory elements based on rectangular SIsFS junctions
Тип публикации: Journal Article
Дата публикации: 2021-11-01
scimago Q2
wos Q3
white level БС1
SJR: 0.58
CiteScore: 5.1
Impact factor: 2.5
ISSN: 00218979, 10897550
General Physics and Astronomy
Краткое описание
We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1% magnetic atoms is used as a ferromagnet (F), and a tunnel AlOx layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling.
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ГОСТ
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Karelina L. N. et al. Scalable memory elements based on rectangular SIsFS junctions // Journal of Applied Physics. 2021. Vol. 130. No. 17. p. 173901.
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Karelina L. N., Hovhannisyan R. A., Golovchanskiy I., Chichkov V., Ben Hamida A., Stolyarov V. S., Uspenskaya L., Erkenov S. A., Bol'ginov V., Ryazanov V. V. Scalable memory elements based on rectangular SIsFS junctions // Journal of Applied Physics. 2021. Vol. 130. No. 17. p. 173901.
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TY - JOUR
DO - 10.1063/5.0063274
UR - https://pubs.aip.org/jap/article/130/17/173901/1063714/Scalable-memory-elements-based-on-rectangular
TI - Scalable memory elements based on rectangular SIsFS junctions
T2 - Journal of Applied Physics
AU - Karelina, L N
AU - Hovhannisyan, Razmik A.
AU - Golovchanskiy, I.A.
AU - Chichkov, V.
AU - Ben Hamida, A
AU - Stolyarov, V. S.
AU - Uspenskaya, L.S.
AU - Erkenov, Sh A
AU - Bol'ginov, V.V.
AU - Ryazanov, V V
PY - 2021
DA - 2021/11/01
PB - AIP Publishing
SP - 173901
IS - 17
VL - 130
SN - 0021-8979
SN - 1089-7550
ER -
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BibTex (до 50 авторов)
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@article{2021_Karelina,
author = {L N Karelina and Razmik A. Hovhannisyan and I.A. Golovchanskiy and V. Chichkov and A Ben Hamida and V. S. Stolyarov and L.S. Uspenskaya and Sh A Erkenov and V.V. Bol'ginov and V V Ryazanov},
title = {Scalable memory elements based on rectangular SIsFS junctions},
journal = {Journal of Applied Physics},
year = {2021},
volume = {130},
publisher = {AIP Publishing},
month = {nov},
url = {https://pubs.aip.org/jap/article/130/17/173901/1063714/Scalable-memory-elements-based-on-rectangular},
number = {17},
pages = {173901},
doi = {10.1063/5.0063274}
}
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MLA
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Karelina, L. N., et al. “Scalable memory elements based on rectangular SIsFS junctions.” Journal of Applied Physics, vol. 130, no. 17, Nov. 2021, p. 173901. https://pubs.aip.org/jap/article/130/17/173901/1063714/Scalable-memory-elements-based-on-rectangular.
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