Scalable memory elements based on rectangular SIsFS junctions
L N Karelina
1
,
I.A. Golovchanskiy
2, 3
,
V. Chichkov
3
,
A Ben Hamida
3
,
V. S. Stolyarov
2, 4
,
L.S. Uspenskaya
1
,
Sh A Erkenov
1, 2, 5
,
V.V. Bol'ginov
1
,
V V Ryazanov
1, 3
Publication type: Journal Article
Publication date: 2021-11-01
scimago Q2
wos Q3
SJR: 0.580
CiteScore: 5.1
Impact factor: 2.5
ISSN: 00218979, 10897550
General Physics and Astronomy
Abstract
We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1% magnetic atoms is used as a ferromagnet (F), and a tunnel AlOx layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling.
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26
Total citations:
26
Citations from 2024:
14
(53%)
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GOST
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Karelina L. N. et al. Scalable memory elements based on rectangular SIsFS junctions // Journal of Applied Physics. 2021. Vol. 130. No. 17. p. 173901.
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Karelina L. N., Hovhannisyan R. A., Golovchanskiy I., Chichkov V., Ben Hamida A., Stolyarov V. S., Uspenskaya L., Erkenov S. A., Bol'ginov V., Ryazanov V. V. Scalable memory elements based on rectangular SIsFS junctions // Journal of Applied Physics. 2021. Vol. 130. No. 17. p. 173901.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1063/5.0063274
UR - https://pubs.aip.org/jap/article/130/17/173901/1063714/Scalable-memory-elements-based-on-rectangular
TI - Scalable memory elements based on rectangular SIsFS junctions
T2 - Journal of Applied Physics
AU - Karelina, L N
AU - Hovhannisyan, Razmik A.
AU - Golovchanskiy, I.A.
AU - Chichkov, V.
AU - Ben Hamida, A
AU - Stolyarov, V. S.
AU - Uspenskaya, L.S.
AU - Erkenov, Sh A
AU - Bol'ginov, V.V.
AU - Ryazanov, V V
PY - 2021
DA - 2021/11/01
PB - AIP Publishing
SP - 173901
IS - 17
VL - 130
SN - 0021-8979
SN - 1089-7550
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2021_Karelina,
author = {L N Karelina and Razmik A. Hovhannisyan and I.A. Golovchanskiy and V. Chichkov and A Ben Hamida and V. S. Stolyarov and L.S. Uspenskaya and Sh A Erkenov and V.V. Bol'ginov and V V Ryazanov},
title = {Scalable memory elements based on rectangular SIsFS junctions},
journal = {Journal of Applied Physics},
year = {2021},
volume = {130},
publisher = {AIP Publishing},
month = {nov},
url = {https://pubs.aip.org/jap/article/130/17/173901/1063714/Scalable-memory-elements-based-on-rectangular},
number = {17},
pages = {173901},
doi = {10.1063/5.0063274}
}
Cite this
MLA
Copy
Karelina, L. N., et al. “Scalable memory elements based on rectangular SIsFS junctions.” Journal of Applied Physics, vol. 130, no. 17, Nov. 2021, p. 173901. https://pubs.aip.org/jap/article/130/17/173901/1063714/Scalable-memory-elements-based-on-rectangular.