Journal of Applied Physics, volume 130, issue 17, pages 173901
Scalable memory elements based on rectangular SIsFS junctions
Karelina L N
1
,
Golovchanskiy I.A.
2, 3
,
Chichkov V.
3
,
Ben Hamida A
3
,
Stolyarov V. S.
2, 4
,
Uspenskaya L.S.
1
,
Erkenov Sh A
1, 2, 5
,
Bol'ginov V.V.
1
,
Ryazanov V V
1, 3
Publication type: Journal Article
Publication date: 2021-11-01
Journal:
Journal of Applied Physics
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 3.2
ISSN: 00218979, 10897550
General Physics and Astronomy
Abstract
We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1% magnetic atoms is used as a ferromagnet (F), and a tunnel AlOx layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling.
Citations by journals
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1
2
3
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JETP Letters
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JETP Letters
3 publications, 23.08%
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Physical Review Materials
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Physical Review Materials
1 publication, 7.69%
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Journal of Communications Technology and Electronics
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Journal of Communications Technology and Electronics
1 publication, 7.69%
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Applied Physics Letters
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Applied Physics Letters
1 publication, 7.69%
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Physical Review Applied
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Physical Review Applied
1 publication, 7.69%
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Cryogenics
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Cryogenics
1 publication, 7.69%
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Symmetry
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Symmetry
1 publication, 7.69%
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Nanomaterials
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Nanomaterials
1 publication, 7.69%
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Physical Review B
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Physical Review B
1 publication, 7.69%
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Nature Communications
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Nature Communications
1 publication, 7.69%
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Russian Microelectronics
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Russian Microelectronics
1 publication, 7.69%
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1
2
3
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Citations by publishers
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1
2
3
4
5
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Pleiades Publishing
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Pleiades Publishing
5 publications, 38.46%
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American Physical Society (APS)
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American Physical Society (APS)
3 publications, 23.08%
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Multidisciplinary Digital Publishing Institute (MDPI)
|
Multidisciplinary Digital Publishing Institute (MDPI)
2 publications, 15.38%
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American Institute of Physics (AIP)
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American Institute of Physics (AIP)
1 publication, 7.69%
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Elsevier
|
Elsevier
1 publication, 7.69%
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Springer Nature
|
Springer Nature
1 publication, 7.69%
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1
2
3
4
5
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Karelina L. N. et al. Scalable memory elements based on rectangular SIsFS junctions // Journal of Applied Physics. 2021. Vol. 130. No. 17. p. 173901.
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Karelina L. N., Hovhannisyan R. A., Golovchanskiy I., Chichkov V., Ben Hamida A., Stolyarov V. S., Uspenskaya L., Erkenov S. A., Bol'ginov V., Ryazanov V. V. Scalable memory elements based on rectangular SIsFS junctions // Journal of Applied Physics. 2021. Vol. 130. No. 17. p. 173901.
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TY - JOUR
DO - 10.1063/5.0063274
UR - https://doi.org/10.1063%2F5.0063274
TI - Scalable memory elements based on rectangular SIsFS junctions
T2 - Journal of Applied Physics
AU - Karelina, L N
AU - Hovhannisyan, Razmik A.
AU - Golovchanskiy, I.A.
AU - Chichkov, V.
AU - Ben Hamida, A
AU - Stolyarov, V. S.
AU - Uspenskaya, L.S.
AU - Erkenov, Sh A
AU - Bol'ginov, V.V.
AU - Ryazanov, V V
PY - 2021
DA - 2021/11/01 00:00:00
PB - American Institute of Physics (AIP)
SP - 173901
IS - 17
VL - 130
SN - 0021-8979
SN - 1089-7550
ER -
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@article{2021_Karelina,
author = {L N Karelina and Razmik A. Hovhannisyan and I.A. Golovchanskiy and V. Chichkov and A Ben Hamida and V. S. Stolyarov and L.S. Uspenskaya and Sh A Erkenov and V.V. Bol'ginov and V V Ryazanov},
title = {Scalable memory elements based on rectangular SIsFS junctions},
journal = {Journal of Applied Physics},
year = {2021},
volume = {130},
publisher = {American Institute of Physics (AIP)},
month = {nov},
url = {https://doi.org/10.1063%2F5.0063274},
number = {17},
pages = {173901},
doi = {10.1063/5.0063274}
}
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Karelina, L. N., et al. “Scalable memory elements based on rectangular SIsFS junctions.” Journal of Applied Physics, vol. 130, no. 17, Nov. 2021, p. 173901. https://doi.org/10.1063%2F5.0063274.