Head of Laboratory

Vladimir Mikhaylovich Kanevskiy

DSc in Physics and Mathematics
Publications
179
Citations
705
h-index
13
Authorization required.

Лаборатория занимается изучением процессов роста тонких пленок и неорганических наноструктур. Получением наноструктур полупроводниковых, композиционных и металлических соединений, а также изучением их структуры и свойств.

  1. Atomic Force Microscopy (AFM)
  2. Microhardness
  3. X-ray phase analysis
  4. Scanning electron microscopy (SEM)
  5. Raman spectroscopy
  6. Electrochemistry
  7. Molecular layer deposition
  8. Pulsed magnetic fields
  9. The kinetics of photoconductivity
  10. Spectroscopy
  11. Electrophysical measurements
  12. Energy dispersive spectroscopy
  13. Magnetometry
  14. Vacuum thermal spraying
  15. Mass spectrometry

Research directions

Study of the influence of impurity composition on the properties of semiconductor solid solutions based on CdTe

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Study of the influence of impurity composition on the properties of semiconductor solid solutions based on CdTe
The laboratory studies the influence of impurity composition on the electrical, photoelectric, mechanical and magnetic characteristics of CdTe-based semiconductor crystals. Manifestations of anisotropy of the structure and properties of crystals, as well as the properties of diluted magnetic semiconductors based on CdTe are studied. Hysteresis loops of the (a) Cd0.995Zn0.005Te, (b) Cd0.97Zn0.03Te, and (c) Cd0.95Zn0.05Te samples at temperatures of 2 and 300 K. The insets show hysteresis loops at 2 K with the lattice diamagnetic contribution subtracted.

synthesis of micro- and nanostructures of semiconductors such as CdTe, ZnO, SiC, NiO etc., as well as characterization of the obtained micro- and nanostructures

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synthesis of micro- and nanostructures of semiconductors such as CdTe, ZnO, SiC,  NiO etc., as well as characterization of the obtained micro- and nanostructures
Development and optimization of methods for obtaining micro- and nanostructures of semiconductors such as CdTe, Ga2O3, ZnO, SiC, NiO etc., as well as characterization of the obtained micro- and nanostructures. The grown nanostructures are promising materials for creating functional elements of solar cells, ionizing radiation detectors, light-emitting diodes, gas sensors and microelectronic elements. The described structures are grown by molecular beam epitaxy, high-vacuum thermal sputtering, magnetron sputtering, a set of thermal methods using the vapor-liquid-crystal mechanism, and electrochemistry. Characterization of the grown micro- and nanostructures using a set of methods available to the laboratory.

Metal-polymer composites based on polymer track membranes and nanowire arrays

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Metal-polymer composites based on polymer track membranes and nanowire arrays
Synthesis of metal-polymer composites based on polymer track membranes and arrays of nanowires of various compositions (Fe, Ni, Cu, Co and alloys based on them, including ternary alloys and layered nanowires) by electrochemical methods. Characterization of the structure and properties of the obtained nanostructure arrays, such as magnetic, electrical and optical properties. Studies of the microhardness of metal-polymer composites based on polymer track membranes and FeNi nanowires. Studies of the features of synthesis and magnetic properties of nanowires from ternary alloys. Studies of the features of electrical anisotropy and percolation effects of conductive arrays.

Modification of the structure and properties of semiconductor compounds using external influences.

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Modification of the structure and properties of semiconductor compounds using external influences.
Study of the processes of modification of the structure and properties of semiconductor compounds using external influences, such as thermal influence, the influence of magnetic fields on the impurity magnetic sublattice, the influence of laser, plasma and ionizing radiation. SEM images of a thick ZnO film: (a) A cross section of the as-grown film; (b) surface of the as-grown film; (c) surface of the plasma-treated film. Figure (b,c) are supplemented with the EDX data (in the insets).

Publications and patents

Found 

Lab address

Москва, Ленинский проспект, дом 59
Authorization required.