Self-organized growth of zero-, one-, and two-dimensional nanoscale SiC structures by oxygen-enhanced hydrogen plasma sputtering

A variety of nanoscale SiC structures, in particular the grain, whisker, and flake, displaying, respectively, zero, one, and two dimensions, has been grown by hydrogen plasma sputtering of a SiC target in the presence of a small amount of oxygen. Growth of the different nanoscale structures takes place by various mechanisms. The SiC whiskers are initiated by SiO2 seed crystals in the SiC film matrix at temperatures around 700 °C. On the other hand, the grains and flakes are separated by insertions of amorphous and graphitic carbon in the films at higher temperatures, around 950 °C. Both these processes result from the reaction of oxygen with the growing SiC film.